Barium iodide and strontium iodide crystals and scintillators implementing the same
    1.
    发明授权
    Barium iodide and strontium iodide crystals and scintillators implementing the same 有权
    碘化钡和碘化iodide晶体及其相同的闪烁体

    公开(公告)号:US08580149B2

    公开(公告)日:2013-11-12

    申请号:US12255375

    申请日:2008-10-21

    IPC分类号: C09K11/08 C09K11/61

    摘要: In one embodiment, a material comprises a crystal comprising strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector according to another embodiment includes a scintillator optic comprising europium-doped strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector in yet another embodiment includes a scintillator optic comprising SrI2 and BaI2, wherein a ratio of SrI2 to BaI2 is in a range of between 0:1 A method for manufacturing a crystal suitable for use in a scintillator includes mixing strontium iodide-containing crystals with a source of Eu2+, heating the mixture above a melting point of the strontium iodide-containing crystals, and cooling the heated mixture near the seed crystal for growing a crystal. Additional materials, systems, and methods are presented.

    摘要翻译: 在一个实施方案中,材料包括包含碘化锶的晶体,每个MeV提供至少50,000个光子。 根据另一实施例的闪烁体辐射检测器包括闪烁体光学器件,其包括铕掺杂的锶碘化物,每个MeV提供至少50,000个光子。 闪烁体辐射检测器在另一个实施方案中包括包含SrI 2和BaI 2的闪烁体光学元件,其中SrI 2与BaI 2的比例在0:1之间。适用于闪烁体的晶体的制造方法包括将碘化锶 - 含有Eu2 +源的晶体,将混合物加热到含碘化containing晶体的熔点之上,并冷却晶种附近的加热混合物以生长晶体。 介绍了其他材料,系统和方法。

    BARIUM IODIDE AND STRONTIUM IODIDE CRYSTALS AND SCINTILLATORS IMPLEMENTING THE SAME
    2.
    发明申请
    BARIUM IODIDE AND STRONTIUM IODIDE CRYSTALS AND SCINTILLATORS IMPLEMENTING THE SAME 有权
    碘化铋和碘化铱晶体和晶体管实现相同

    公开(公告)号:US20100044576A1

    公开(公告)日:2010-02-25

    申请号:US12255375

    申请日:2008-10-21

    IPC分类号: G01T1/20 C01F11/20 C09K11/77

    摘要: In one embodiment, a material comprises a crystal comprising strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector according to another embodiment includes a scintillator optic comprising europium-doped strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector in yet another embodiment includes a scintillator optic comprising SrI2 and BaI2, wherein a ratio of SrI2 to BaI2 is in a range of between 0:1 A method for manufacturing a crystal suitable for use in a scintillator includes mixing strontium iodide-containing crystals with a source of Eu2+, heating the mixture above a melting point of the strontium iodide-containing crystals, and cooling the heated mixture near the seed crystal for growing a crystal. Additional materials, systems, and methods are presented.

    摘要翻译: 在一个实施方案中,材料包括包含碘化锶的晶体,每个MeV提供至少50,000个光子。 根据另一实施例的闪烁体辐射检测器包括闪烁体光学器件,其包括铕掺杂的锶碘化物,每个MeV提供至少50,000个光子。 闪烁体辐射检测器在另一个实施方案中包括包含SrI 2和BaI 2的闪烁体光学元件,其中SrI 2与BaI 2的比例在0:1之间。适用于闪烁体的晶体的制造方法包括将碘化锶 - 含有Eu2 +源的晶体,将混合物加热到含碘化containing晶体的熔点之上,并冷却晶种附近的加热混合物以生长晶体。 介绍了其他材料,系统和方法。

    GaTe semiconductor for radiation detection
    3.
    发明授权
    GaTe semiconductor for radiation detection 失效
    GaTe半导体辐射检测

    公开(公告)号:US07550735B2

    公开(公告)日:2009-06-23

    申请号:US11824094

    申请日:2007-06-29

    IPC分类号: G01T1/24 H01L27/146

    CPC分类号: G01T1/24

    摘要: GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

    摘要翻译: GaTe半导体用作室温辐射检测器。 GaTe对辐射探测器具有有用的特性:理想的带隙,良好的迁移率,低熔点(无蒸发),非吸湿特性和高纯度起始材料的可用性。 检测器可以用于例如在入口港口,城市和离岸地检测非法核武器和放射性分散装置,并用于确定存在于患者中的医用同位素。

    Semiconductor radiation detector
    5.
    发明授权
    Semiconductor radiation detector 失效
    半导体辐射探测器

    公开(公告)号:US07687780B2

    公开(公告)日:2010-03-30

    申请号:US11248943

    申请日:2005-10-11

    IPC分类号: G01T1/16

    CPC分类号: G01T1/24 G01T3/08

    摘要: A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI2 or II-IV-V2 where the “I” component is from column 1A or 1B of the periodic table, the “II” component is from column 2B, the “III” component is from column 3A, the “IV” component is from column 4A, the “V” component is from column 5A, and the “VI” component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

    摘要翻译: 用于电离电磁辐射,中子和能量带电粒子的半导体检测器。 检测元件由具有组成I-III-VI2或II-IV-V2的化合物组成,其中“I”组分来自元素周期表第1A或1B栏,“II”组分来自第2B栏, “III”组分来自第3A栏,“IV”组分来自第4A栏,“V”组分来自第5A栏,“VI”组分来自第6A栏。 检测元件通过产生与沉积在元件中的能量成比例的信号来检测电离辐射,并且通过捕获之后的一种或多种构成材料发射的电离辐射来检测中子。 检测器可能含有多于一个中子敏感元件。

    Semiconductor radiation detector
    6.
    发明申请
    Semiconductor radiation detector 失效
    半导体辐射探测器

    公开(公告)号:US20070080301A1

    公开(公告)日:2007-04-12

    申请号:US11248943

    申请日:2005-10-11

    IPC分类号: G01T1/24

    CPC分类号: G01T1/24 G01T3/08

    摘要: A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI2 or II-IV-V2 where the “I” component is from column 1A or 1B of the periodic table, the “II” component is from column 2B, the “III” component is from column 3A, the “IV” component is from column 4A, the “V” component is from column 5A, and the “VI” component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

    摘要翻译: 用于电离电磁辐射,中子和能量带电粒子的半导体检测器。 检测元件由具有组成I-III-VI 2 II或II-IV-V 2的化合物组成,其中“I”组分来自第1A或1B栏 的“II”分量来自列2B,“III”分量来自列3A,“IV”分量来自列4A,“V”分量来自列5A,“VI” 组件来自列6A。 检测元件通过产生与沉积在元件中的能量成比例的信号来检测电离辐射,并且通过捕获之后的一种或多种构成材料发射的电离辐射来检测中子。 检测器可能含有多于一个中子敏感元件。

    Ionizing radiation detector
    7.
    发明授权
    Ionizing radiation detector 失效
    电离辐射探测器

    公开(公告)号:US06649915B2

    公开(公告)日:2003-11-18

    申请号:US10325995

    申请日:2002-12-19

    IPC分类号: B05D306

    摘要: A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water after attaching electrical contacts to the crystal surface.

    摘要翻译: 公开了一种CdZnTe(CZT)晶体,其具有天然CdO介电涂层以减少表面漏电流,从而提高使用CZT晶体的检测器的分辨率。 提供用于形成电介质涂层的两步法,其包括用常规溴/甲醇蚀刻处理的溶液蚀刻CZT晶体的表面,并用10w / o NH4F和10w的溶液钝化CZT晶体表面 / o H2O2在水中,将电触点连接到晶体表面。

    Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals

    公开(公告)号:US09612345B2

    公开(公告)日:2017-04-04

    申请号:US14843150

    申请日:2015-09-02

    摘要: A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermal neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.