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14 条记录 (耗时 0.033 秒)

    Nanophotonic transceiver
    5.
    发明授权
    Nanophotonic transceiver 有权
    纳米光子收发器

    公开(公告)号：US08063473B1

    公开(公告)日：2011-11-22

    申请号：US11001597

    申请日：2004-11-29

    申请人： Serey Thai ,  Paul R. de la Houssaye ,  Randy L. Shimabukuro ,  Stephen D. Russell

    发明人： Serey Thai ,  Paul R. de la Houssaye ,  Randy L. Shimabukuro ,  Stephen D. Russell

    IPC分类号： H01L23/02

    CPC分类号： G02B6/4201 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A nanophotonic device. The device includes a substrate, at least one light emitting structure and at least one electronic component. The at least one light emitting structure is capable of transmitting light and is monolithically integrated on the substrate. The at least one electronic component is monolithically integrated on the substrate. A method for fabricating nanophotonic devices is also described.

    摘要翻译： 纳米光子装置。 该器件包括衬底，至少一个发光结构和至少一个电子元件。 所述至少一个发光结构能够透射光并且单片集成在所述基板上。 所述至少一个电子部件被整体地集成在所述基板上。 还描述了制造纳米光子器件的方法。

    Laterally disposed nanostructures of silicon on an insulating substrate
    8.
    发明授权
    Laterally disposed nanostructures of silicon on an insulating substrate 失效
    在绝缘基板上排列有硅的纳米结构

    公开(公告)号：US6103540A

    公开(公告)日：2000-08-15

    申请号：US185990

    申请日：1998-11-04

    申请人： Stephen D. Russell ,  Robert C. Dynes ,  Paul R. de la Houssaye ,  Wadad B. Dubbelday ,  Randy L. Shimabukuro ,  Andrew S. Katz

    发明人： Stephen D. Russell ,  Robert C. Dynes ,  Paul R. de la Houssaye ,  Wadad B. Dubbelday ,  Randy L. Shimabukuro ,  Andrew S. Katz

    IPC分类号： H01L31/0232 ,  H01L33/34 ,  H01L33/40 ,  H01L33/42 ,  H01L21/20

    CPC分类号： H01L33/42 ,  H01L31/02322 ,  H01L33/346 ,  H01L33/40 ,  Y10S438/962

    摘要： A single crystal silicon film nanostructure capable of optical emission isaterally disposed on an insulating transparent substrate of sapphire. By laterally disposing the nanostructure, adequate support for the structure is provided, and the option of fabricating efficient electrical contact structures to the nanostructure is made possible. The method of the invention begins with the deposition of ultrathin layers of silicon on the substrate. A Solid Phase Epitaxy improvement process is then used to remove crystalline defects formed during the deposition. The silicon is then annealed and thinned using thermal oxidation steps to reduce its thickness to be on the order of five nanometers in height. The width and length of the nanostructure are defined by lithography. The nanometer dimensioned silicon is then spin-coated with a resist with width and length definition in the resist being performed by way of electron beam exposure. The photoresist is developed and the e-beam written pattern is transferred to the silicon by etching. Oxidations and etchings may subsequently be employed to further thin the width of the nanostructure to be on the order of two to three nanometers. The single crystal, silicon-based nanostructures can be made an integral part of silicon-based photo, electroluminescent, and quantum-effect devices all of which are compatible with current silicon manufacturing techniques and with other silicon-based microelectronics.

    摘要翻译： 能够发光的单晶硅膜纳米结构横向设置在蓝宝石的绝缘透明基板上。 通过横向设置纳米结构，提供了对结构的足够的支撑，并且使得能够对纳米结构制造有效的电接触结构的选择成为可能。 本发明的方法开始于在衬底上沉积超薄层的硅。 然后使用固相外延改进工艺去除沉积期间形成的结晶缺陷。 然后使用热氧化步骤对硅进行退火和减薄，以将其厚度减小到高达5纳米级。 纳米结构的宽度和长度由光刻法定义。 然后，通过电子束曝光来进行抗蚀剂的宽度和长度定义的抗蚀剂旋涂纳米尺寸的硅。 光致抗蚀剂被显影，并且电子束写入图案通过蚀刻转移到硅。 随后可以采用氧化和蚀刻来将纳米结构的宽度进一步减薄到二至三毫微数量级。 单晶硅基纳米结构可以制成硅基光电子，电致发光和量子效应器件的一个组成部分，所有这些都与当前的硅制造技术和其他硅基微电子器件兼容。

    Photonic silicon on a transparent substrate
    10.
    发明授权
    Photonic silicon on a transparent substrate 失效
    光子硅在透明基板上

    公开(公告)号：US6093941A

    公开(公告)日：2000-07-25

    申请号：US118900

    申请日：1993-09-09

    申请人： Stephen D. Russell ,  Wadad B. Dubbelday ,  Randy L. Shimabukuro ,  Paul R. de la Houssaye ,  Diane M. Szaflarski

    发明人： Stephen D. Russell ,  Wadad B. Dubbelday ,  Randy L. Shimabukuro ,  Paul R. de la Houssaye ,  Diane M. Szaflarski

    IPC分类号： H01L31/0232 ,  H01L33/34 ,  H01L33/40 ,  H01L33/42 ,  H01L33/00 ,  H01L27/15 ,  H01L31/0312 ,  H01L31/12

    CPC分类号： H01L33/40 ,  H01L31/02322 ,  H01L33/346 ,  H01L33/42

    摘要： A light emitting photonic structure has a transparent substrate, such as sapphire, supporting a layer of group IV semiconductor material, such as silicon, having at least one porous region from which light is emitted as a response to an electrical or optical stimulus. Optionally, the group IV semiconductor material may be germanium, carbon, tin, silicon-germanium, silicon carbide, single crystal structures, polycrystalline structures, or amorphous structures and the transparent substrate may be glass, quartz, fused silica, diamond, ruby, yttria alumina garnet, yttria stabilized zirconium, magnesium fluoride or magnesium oxide. When the stimulus is electrical, the response is electroluminescence or cathodoluminescence and when the stimulus is optical, the response is photoluminescence. The method includes providing a transparent substrate, forming a layer of a group IV semiconductor material on the transparent substrate, and fabricating at least one region in the layer of the group IV semiconductor material from which light is emitted as a response to a electro- or photo-stimulus. The fabricating of the region is by a photochemical etch by an etching solution and a means to catalyze an etching reaction and may further include an illuminating of the region with light or an other suitable wavelength to provide for a photo-initiated photo-chemical stain etch of the region.

    摘要翻译： 发光光子结构具有诸如蓝宝石的透明衬底，其支撑诸如硅的IV族半导体材料层，其具有作为对电或光刺激的响应从其发射光的至少一个多孔区域。 任选地，IV族半导体材料可以是锗，碳，锡，硅 - 锗，碳化硅，单晶结构，多晶结构或非晶结构，并且透明衬底可以是玻璃，石英，熔融二氧化硅，金刚石，红宝石，氧化钇 氧化铝石榴石，氧化钇稳定的锆，氟化镁或氧化镁。 当刺激为电时，响应为电致发光或阴极发光，当刺激为光学时，响应为光致发光。 该方法包括提供透明衬底，在透明衬底上形成IV族半导体材料层，以及制造在其中发射光的IV族半导体材料层中的至少一个区域作为对电 - 或 照片刺激。 该区域的制造是通过蚀刻溶液的光化学蚀刻和催化腐蚀反应的手段，并且还可以包括用光或其它合适的波长照射该区域以提供光引发的光化学污渍蚀刻 的区域。