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公开(公告)号：US10367089B2
公开(公告)日：2019-07-30
申请号：US13431596
申请日：2012-03-27
申请人： Stephen Daley Arthur , Joseph Darryl Michael , Tammy Lynn Johnson , David Alan Lilienfeld , Kevin Sean Matocha , Jody Alan Fronheiser , William Gregg Hawkins
发明人： Stephen Daley Arthur , Joseph Darryl Michael , Tammy Lynn Johnson , David Alan Lilienfeld , Kevin Sean Matocha , Jody Alan Fronheiser , William Gregg Hawkins
IPC分类号： H01L21/04 , H01L29/16 , H01L29/45 , H01L29/49 , H01L29/78 , H01L29/739 , H01L29/745
摘要： According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.
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2.发明申请公开(公告)号：US20130075756A1
公开(公告)日：2013-03-28
申请号：US13431596
申请日：2012-03-27
申请人： Stephen Daley Arthur , Joseph Darryl Michael , Tammy Lynn Johnson , David Alan Lilienfeld , Kevin Sean Matocha , Jody Alan Fronheiser , William Gregg Hawkins
发明人： Stephen Daley Arthur , Joseph Darryl Michael , Tammy Lynn Johnson , David Alan Lilienfeld , Kevin Sean Matocha , Jody Alan Fronheiser , William Gregg Hawkins
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/045 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4933 , H01L29/7395 , H01L29/7455 , H01L29/7802
摘要： According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.
摘要翻译： 根据一个实施例，一种半导体器件，其具有半导体衬底，该半导体衬底包括碳化硅，栅极设置在第一表面上的衬底的一部分上，漏电极设置在衬底的第二表面上。 设置在栅电极上的电介质层和围绕电介质层设置的补救层，其中补救层配置成减轻负偏压温度不稳定性，保持阈值电压的变化小于约1伏。 源电极设置在补救层上，其中源极电耦合到半导体衬底的接触区域。
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公开(公告)号：US09257283B2
公开(公告)日：2016-02-09
申请号：US13567791
申请日：2012-08-06
CPC分类号： H01L21/0485 , H01L29/66068 , H01L29/7827
摘要： A semiconductor device is disclosed along with methods for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode formed using a metal that limits a shift, such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide.
摘要翻译： 公开了一种半导体器件以及用于制造这种器件的方法。 在某些实施例中，半导体器件包括使用金属形成的源电极，其在操作期间限制半导体器件的阈值电压中的偏移，例如由于偏置温度不稳定性。 在某些实施例中，半导体器件可以基于碳化硅。
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公开(公告)号：US20140034963A1
公开(公告)日：2014-02-06
申请号：US13567791
申请日：2012-08-06
CPC分类号： H01L21/0485 , H01L29/66068 , H01L29/7827
摘要： A semiconductor device is disclosed along with methods for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode formed using a metal that limits a shift, such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide.
摘要翻译： 公开了一种半导体器件以及用于制造这种器件的方法。 在某些实施例中，半导体器件包括使用金属形成的源电极，其在操作期间限制半导体器件的阈值电压中的偏移，例如由于偏置温度不稳定性。 在某些实施例中，半导体器件可以基于碳化硅。
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