公开(公告)号：US10367089B2

公开(公告)日：2019-07-30

申请号：US13431596

申请日：2012-03-27

申请人： Stephen Daley Arthur ,  Joseph Darryl Michael ,  Tammy Lynn Johnson ,  David Alan Lilienfeld ,  Kevin Sean Matocha ,  Jody Alan Fronheiser ,  William Gregg Hawkins

发明人： Stephen Daley Arthur ,  Joseph Darryl Michael ,  Tammy Lynn Johnson ,  David Alan Lilienfeld ,  Kevin Sean Matocha ,  Jody Alan Fronheiser ,  William Gregg Hawkins

IPC分类号： H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L29/739 ,  H01L29/745

摘要： According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.

公开(公告)号：US09257283B2

公开(公告)日：2016-02-09

申请号：US13567791

申请日：2012-08-06

申请人： Joseph Darryl Michael ,  Stephen Daley Arthur ,  Tammy Lynn Johnson ,  David Alan Lilienfeld

发明人： Joseph Darryl Michael ,  Stephen Daley Arthur ,  Tammy Lynn Johnson ,  David Alan Lilienfeld

IPC分类号： H01L29/15 ,  H01L21/00 ,  H01L21/04 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/0485 ,  H01L29/66068 ,  H01L29/7827

摘要： A semiconductor device is disclosed along with methods for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode formed using a metal that limits a shift, such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide.

摘要翻译： 公开了一种半导体器件以及用于制造这种器件的方法。 在某些实施例中，半导体器件包括使用金属形成的源电极，其在操作期间限制半导体器件的阈值电压中的偏移，例如由于偏置温度不稳定性。 在某些实施例中，半导体器件可以基于碳化硅。

公开(公告)号：US20140034963A1

公开(公告)日：2014-02-06

申请号：US13567791

申请日：2012-08-06

申请人： Joseph Darryl Michael ,  Stephen Daley Arthur ,  Tammy Lynn Johnson ,  David Alan Lilienfeld

发明人： Joseph Darryl Michael ,  Stephen Daley Arthur ,  Tammy Lynn Johnson ,  David Alan Lilienfeld

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L21/0485 ,  H01L29/66068 ,  H01L29/7827

摘要： A semiconductor device is disclosed along with methods for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode formed using a metal that limits a shift, such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide.

摘要翻译： 公开了一种半导体器件以及用于制造这种器件的方法。 在某些实施例中，半导体器件包括使用金属形成的源电极，其在操作期间限制半导体器件的阈值电压中的偏移，例如由于偏置温度不稳定性。 在某些实施例中，半导体器件可以基于碳化硅。

公开(公告)号：US20130075756A1

公开(公告)日：2013-03-28

申请号：US13431596

申请日：2012-03-27

申请人： Stephen Daley Arthur ,  Joseph Darryl Michael ,  Tammy Lynn Johnson ,  David Alan Lilienfeld ,  Kevin Sean Matocha ,  Jody Alan Fronheiser ,  William Gregg Hawkins

发明人： Stephen Daley Arthur ,  Joseph Darryl Michael ,  Tammy Lynn Johnson ,  David Alan Lilienfeld ,  Kevin Sean Matocha ,  Jody Alan Fronheiser ,  William Gregg Hawkins

IPC分类号： H01L29/78

CPC分类号： H01L29/78 ,  H01L21/045 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/7395 ,  H01L29/7455 ,  H01L29/7802

摘要： According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.

摘要翻译： 根据一个实施例，一种半导体器件，其具有半导体衬底，该半导体衬底包括碳化硅，栅极设置在第一表面上的衬底的一部分上，漏电极设置在衬底的第二表面上。 设置在栅电极上的电介质层和围绕电介质层设置的补救层，其中补救层配置成减轻负偏压温度不稳定性，保持阈值电压的变化小于约1伏。 源电极设置在补救层上，其中源极电耦合到半导体衬底的接触区域。

公开(公告)号：US09576868B2

公开(公告)日：2017-02-21

申请号：US13562029

申请日：2012-07-30

申请人： Joseph Darryl Michael ,  Stephen Daley Arthur

发明人： Joseph Darryl Michael ,  Stephen Daley Arthur

IPC分类号： H01L21/56 ,  H01L23/04 ,  H01L21/50 ,  H01L29/78 ,  H01L29/16

CPC分类号： H01L23/04 ,  H01L21/50 ,  H01L29/1608 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.

摘要翻译： 一种系统包括碳化硅（SiC）半导体器件和封装SiC半导体器件的密封封装。 密封的封装构造成在SiC半导体器件附近保持特定的气氛。 此外，特定的气氛限制了在工作期间SiC半导体器件的阈值电压移动到小于1V。

公开(公告)号：US20140027782A1

公开(公告)日：2014-01-30

申请号：US13562029

申请日：2012-07-30

申请人： Joseph Darryl Michael ,  Stephen Daley Arthur

发明人： Joseph Darryl Michael ,  Stephen Daley Arthur

IPC分类号： H01L21/56 ,  H01L29/78 ,  H01L29/16

CPC分类号： H01L23/04 ,  H01L21/50 ,  H01L29/1608 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.

摘要翻译： 一种系统包括碳化硅（SiC）半导体器件和封装SiC半导体器件的密封封装。 密封的封装构造成在SiC半导体器件附近保持特定的气氛。 此外，特定的气氛限制了在工作期间SiC半导体器件的阈值电压移动到小于1V。

公开(公告)号：US20110171399A1

公开(公告)日：2011-07-14

申请号：US12684305

申请日：2010-01-08

申请人： Milivoj Konstantin Brun ,  Krishan Lal Luthra ,  Timothy John Sommerer ,  Joseph Darryl Michael ,  William Paul Minnear

发明人： Milivoj Konstantin Brun ,  Krishan Lal Luthra ,  Timothy John Sommerer ,  Joseph Darryl Michael ,  William Paul Minnear

IPC分类号： C23C16/46 ,  C23C16/00

CPC分类号： C23C16/481 ,  C04B35/62868 ,  C04B35/62871 ,  C04B35/62873 ,  C04B35/62884 ,  C04B35/803 ,  C04B35/806 ,  C04B2235/5224 ,  C04B2235/5228 ,  C04B2235/5244 ,  C04B2235/667 ,  C23C16/545

摘要： A process and apparatus for continuously depositing a coating on a fibrous material. The process is a chemical vapor deposition process that includes causing multiple strands of a fibrous material to continuously travel through a coating zone within an enclosed chamber defined by a housing so that portions of the strands contact a reactant gas as the portions travel through the chamber, directly heating the portions of the strands without physically contacting the strands and without directly heating the housing, and depositing a coating material on the strands as a result of the reactant gas contacting the portions of the strands and decomposing to form a coating of the coating material. Heating of the strands can be achieved by capacitive coupling, inductive coupling, microwave radiation, and radiant heating.

摘要翻译： 一种用于在纤维材料上连续沉积涂层的方法和装置。 该过程是化学气相沉积工艺，其包括使纤维材料的多股连续地通过由壳体限定的封闭室内的涂覆区域，使得当部分行进通过室时，部分股线接触反应气体， 直接加热股线的部分而不物理接触股线并且不直接加热壳体，并且由于反应物气体接触股线的部分并且分解以形成涂层材料的涂层而将涂层材料沉积在股线上 。 线的加热可以通过电容耦合，电感耦合，微波辐射和辐射加热来实现。

公开(公告)号：US07944148B2

公开(公告)日：2011-05-17

申请号：US12241117

申请日：2008-09-30

申请人： David John Smith ,  Timothy John Sommerer ,  Joseph Darryl Michael

发明人： David John Smith ,  Timothy John Sommerer ,  Joseph Darryl Michael

IPC分类号： H01J61/18 ,  H01K1/50

CPC分类号： H01J61/125 ,  H01J61/18 ,  H01J61/327 ,  H01J61/70 ,  H01J65/042

摘要： A radiation source is presented, the source comprising an ionizable mercury-free composition that comprises tin halide such that the halide to tin ratio is greater than 2.

摘要翻译： 提供了一种辐射源，该源包括可电离的无汞组合物，其包含卤化锡，使得卤化物与锡的比率大于2。

公开(公告)号：US06171452B2

公开(公告)日：2001-01-09

申请号：US09339664

申请日：1999-06-24

申请人： Joseph Darryl Michael

发明人： Joseph Darryl Michael

IPC分类号： C01B1310

CPC分类号： C01B13/10

摘要： Controlled generation of ozone is provided by flowing air around an electrodeless low pressure discharge lamp having high ultraviolet transmission properties. Power to the lamp is controlled by a circuit that is driven by a photocell for detecting visible light emissions from a phosphor triggered by ultraviolet radiation from the lamp upon the phosphor.

摘要翻译： 通过在具有高紫外线传输性能的无电极低压放电灯周围流动空气来提供臭氧的控制产生。 灯的功率由光电池驱动的电路控制，该电路用于检测由荧光体上的灯的紫外线辐射引发的荧光体的可见光发射。

公开(公告)号：US20120156827A1

公开(公告)日：2012-06-21

申请号：US12972242

申请日：2010-12-17

申请人： Joseph Darryl Michael ,  Bruce Edward Brackett ,  Kristian William Andreini ,  Juan Carlos Rojo ,  Scott Feldman-Peabody

发明人： Joseph Darryl Michael ,  Bruce Edward Brackett ,  Kristian William Andreini ,  Juan Carlos Rojo ,  Scott Feldman-Peabody

IPC分类号： H01L31/0256 ,  H01L31/0224 ,  B05D3/06

CPC分类号： H01L31/022466 ,  C03C17/2453 ,  C03C2217/232 ,  C03C2218/32 ,  C23C14/086 ,  C23C14/5806 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/428 ,  H01L31/073 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

摘要： In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support and rapidly thermally annealing the substantially amorphous cadmium tin oxide layer by exposing a first surface of the substantially amorphous cadmium tin oxide layer to an electromagnetic radiation to form a transparent layer. A method of making a photovoltaic device is also provided.

摘要翻译： 在本发明的一个方面，提供了一种方法。 该方法包括将基本无定形的镉锡氧化物层设置在载体上，并将基本上无定形的氧化镉锡层的第一表面暴露于电磁辐射，以形成透明层，从而对基本上无定形的氧化镉锡层进行热退火。 还提供了制造光伏器件的方法。