Formation of thin film resistors
    2.
    发明授权
    Formation of thin film resistors 有权
    薄膜电阻的形成

    公开(公告)号:US06500350B1

    公开(公告)日:2002-12-31

    申请号:US09779990

    申请日:2001-02-08

    IPC分类号: H01C112

    摘要: A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

    摘要翻译: 提供了一种用于形成与导电材料层电接触的电阻材料的图案化层的方法。 形成三层结构,其包括金属导电层,由可通过化学蚀刻剂降解的材料形成的中间层和足够孔隙率的电阻材料层,使得所述中间层的化学蚀刻剂可渗透通过 电阻材料并化学降解所述中间层,使得电阻材料可以在中间层被化学降解的地方从所述导电层烧蚀。 在电阻材料层上形成图案化的光致抗蚀剂层。 电阻材料层暴露于所述中间层的化学蚀刻剂,使得蚀刻剂渗透通过多孔电阻材料层并降解中间层。 然后,中间层已经劣化的地方,电阻材料层的部分被消融掉。

    Formation of thin film resistors
    3.
    发明授权
    Formation of thin film resistors 有权
    薄膜电阻的形成

    公开(公告)号:US06329899B1

    公开(公告)日:2001-12-11

    申请号:US09198954

    申请日:1998-11-24

    IPC分类号: H01L1012

    摘要: A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

    摘要翻译: 提供了一种用于形成与导电材料层电接触的电阻材料的图案化层的方法。 形成三层结构,其包括金属导电层,由可通过化学蚀刻剂降解的材料形成的中间层和足够孔隙率的电阻材料层,使得所述中间层的化学蚀刻剂可渗透通过 电阻材料并化学降解所述中间层,使得电阻材料可以在中间层被化学降解的地方从所述导电层烧蚀。 在电阻材料层上形成图案化的光致抗蚀剂层。 电阻材料层暴露于所述中间层的化学蚀刻剂,使得蚀刻剂渗透通过多孔电阻材料层并降解中间层。 然后,中间层已经劣化的地方,电阻材料层的部分被消融掉。