公开(公告)号：US20120285520A1

公开(公告)日：2012-11-15

申请号：US13107371

申请日：2011-05-13

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/0687 ,  H01L31/18 ,  Y02E10/544

摘要： A photovoltaic device and method for fabrication include multijunction cells, each cell having a material grown independently from the other and including different band gap energies. An interface is disposed between the cells and configured to wafer bond the cells wherein the cells are configured to be adjacent without regard to lattice mismatch.

摘要翻译： 光伏器件和制造方法包括多结电池，每个电池具有彼此独立生长且包括不同带隙能量的材料。 接口设置在单元之间并被配置为晶片结合单元，其中单元被配置为相邻而不考虑晶格失配。

公开(公告)号：US09818901B2

公开(公告)日：2017-11-14

申请号：US13107371

申请日：2011-05-13

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

IPC分类号： H01L31/18 ,  H01L31/0687

CPC分类号： H01L31/0687 ,  H01L31/18 ,  Y02E10/544

摘要： A photovoltaic device and method for fabrication include multijunction cells, each cell having a material grown independently from the other and including different band gap energies. An interface is disposed between the cells and configured to wafer bond the cells wherein the cells are configured to be adjacent without regard to lattice mismatch.

公开(公告)号：US09059073B2

公开(公告)日：2015-06-16

申请号：US13603944

申请日：2012-09-05

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

IPC分类号： H01L21/20 ,  H01L21/18 ,  H01L21/78 ,  H01L21/02 ,  H01L31/18

CPC分类号： H01L21/187 ,  H01L21/02002 ,  H01L21/7813 ,  H01L31/1892 ,  Y02E10/50

摘要： A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.

摘要翻译： 提供从基底基板去除半导体器件层的方法，其包括在基底基板的上表面上提供裂纹扩展层。 在裂纹扩展层上形成包括至少一个半导体器件的半导体器件层。 接下来，蚀刻裂纹扩展层的端部以在裂纹扩展层中引发裂纹。 蚀刻的裂纹扩展层然后被切割，以向半导体器件层的表面和另一个裂开的裂纹扩展层部分提供切割的裂纹扩展层部分到基底衬底的上表面。 从半导体器件层的表面去除切割的裂纹扩展层部分，并从基底基板的上表面除去另一个裂开的裂纹扩展层部分。

公开(公告)号：US20130005119A1

公开(公告)日：2013-01-03

申请号：US13603944

申请日：2012-09-05

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

IPC分类号： H01L21/20

CPC分类号： H01L21/187 ,  H01L21/02002 ,  H01L21/7813 ,  H01L31/1892 ,  Y02E10/50

摘要： A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.

摘要翻译： 提供从基底基板去除半导体器件层的方法，其包括在基底基板的上表面上提供裂纹扩展层。 在裂纹扩展层上形成包括至少一个半导体器件的半导体器件层。 接下来，蚀刻裂纹扩展层的端部以在裂纹扩展层中引发裂纹。 蚀刻的裂纹扩展层然后被切割，以向半导体器件层的表面和另一个裂开的裂纹扩展层部分提供切割的裂纹扩展层部分到基底衬底的上表面。 从半导体器件层的表面去除切割的裂纹扩展层部分，并从基底基板的上表面除去另一个裂开的裂纹扩展层部分。

公开(公告)号：US20120322244A1

公开(公告)日：2012-12-20

申请号：US13161260

申请日：2011-06-15

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

IPC分类号： H01L21/20

CPC分类号： H01L21/187 ,  H01L21/02002 ,  H01L21/7813 ,  H01L31/1892 ,  Y02E10/50

摘要： A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.

摘要翻译： 提供从基底基板去除半导体器件层的方法，其包括在基底基板的上表面上提供裂纹扩展层。 在裂纹扩展层上形成包括至少一个半导体器件的半导体器件层。 接下来，蚀刻裂纹扩展层的端部以在裂纹扩展层中引发裂纹。 蚀刻的裂纹扩展层然后被切割，以向半导体器件层的表面和另一个裂开的裂纹扩展层部分提供切割的裂纹扩展层部分到基底衬底的上表面。 从半导体器件层的表面去除切割的裂纹扩展层部分，并从基底基板的上表面除去另一个裂开的裂纹扩展层部分。

公开(公告)号：US09040392B2

公开(公告)日：2015-05-26

申请号：US13161260

申请日：2011-06-15

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Norma E. Sosa Cortes

IPC分类号： H01L21/36 ,  H01L21/18 ,  H01L21/78 ,  H01L21/02 ,  H01L31/18

CPC分类号： H01L21/187 ,  H01L21/02002 ,  H01L21/7813 ,  H01L31/1892 ,  Y02E10/50

摘要： A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.

公开(公告)号：US20130126493A1

公开(公告)日：2013-05-23

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

公开(公告)号：US09079269B2

公开(公告)日：2015-07-14

申请号：US13302427

申请日：2011-11-22

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Keith E. Fogel ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Norma E. Sosa Cortes ,  Ning Li ,  Ibrahim Alhomoudi

IPC分类号： B23K26/00 ,  H01L21/304 ,  B23K26/06 ,  B23K26/36 ,  B23K26/40

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/6835 ,  H01L2221/68327

摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.

摘要翻译： 可以使用激光烧蚀在至少基底衬底顶部的应力层的至少一层覆盖层内形成沟槽。 应力层的非烧蚀部分具有限定要剥离的材料层区域的边缘的边缘。 激光烧蚀还可用于在包括至少镀覆种子层的覆盖材料堆叠内形成沟槽。 在材料堆叠的非烧蚀部分上形成应力层，应力层的一部分具有限定要剥离的材料层区域的边缘的边缘。 可以进一步使用激光烧蚀来形成延伸穿过覆盖应力层并进入基底本身的沟槽。 沟槽具有限定要剥离的材料层区域的边缘的边缘。

公开(公告)号：US08822317B2

公开(公告)日：2014-09-02

申请号：US13603739

申请日：2012-09-05

申请人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

发明人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC分类号： H01L21/336

CPC分类号： H01L21/2258 ,  H01L21/246 ,  H01L21/28575 ,  H01L29/41775 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522

摘要： A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants into the substrate to form self-aligned dopant regions in the substrate. The dopant layer is removed. A metal containing layer is deposited over the gate stack and in contact with the substrate in the exposed portions. The metal containing layer is annealed to drive metal into the substrate to form self-aligned contact regions in a metal alloy formed in the substrate within the dopant regions. The metal layer is then removed.

摘要翻译： 金属氧化物半导体场效应晶体管及其形成方法包括在与栅极叠层相邻的衬底上的曝光部分，在栅极堆叠上形成掺杂剂层，并在暴露并退火掺杂剂层驱动的部分中与衬底接触 掺杂到衬底中以在衬底中形成自对准掺杂剂区域。 去除掺杂剂层。 在栅极叠层上沉积含金属层，并在暴露部分与衬底接触。 对含金属层进行退火以将金属驱动到衬底中，以在掺杂区域内的衬底中形成的金属合金中形成自对准接触区域。 然后去除金属层。

公开(公告)号：US20130001659A1

公开(公告)日：2013-01-03

申请号：US13603739

申请日：2012-09-05

申请人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

发明人： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC分类号： H01L29/78

CPC分类号： H01L21/2258 ,  H01L21/246 ,  H01L21/28575 ,  H01L29/41775 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522

摘要： A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants into the substrate to form self-aligned dopant regions in the substrate. The dopant layer is removed. A metal containing layer is deposited over the gate stack and in contact with the substrate in the exposed portions. The metal containing layer is annealed to drive metal into the substrate to form self-aligned contact regions in a metal alloy formed in the substrate within the dopant regions. The metal layer is then removed.

摘要翻译： 金属氧化物半导体场效应晶体管及其形成方法包括在与栅极叠层相邻的衬底上的曝光部分，在栅极叠层上形成掺杂剂层，并在暴露并退火掺杂剂层驱动的部分中与衬底接触 掺杂到衬底中以在衬底中形成自对准掺杂剂区域。 去除掺杂剂层。 在栅极叠层上沉积含金属层，并在暴露部分与衬底接触。 对含金属层进行退火以将金属驱动到衬底中，以在掺杂区域内的衬底中形成的金属合金中形成自对准接触区域。 然后去除金属层。