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1.发明申请Method for Imparting a Controlled Amount of Stress in Semiconductor Devices for Fabricating Thin Flexible Circuits 审中-公开在制造薄柔性电路的半导体器件中施加受控量的应力的方法公开(公告)号：US20120217622A1
公开(公告)日：2012-08-30
申请号：US13467537
申请日：2012-05-09
CPC分类号： H01L23/585 , H01L21/304 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： Imparting a controlled amount of stress in an assembly comprising a semiconductor circuit on a substrate comprises depositing a tensile stressed metal film stressor layer onto the surface of the circuit. Establishing a fracture region below electrically active regions of the circuit, adhering a foil handle to the assembly and pulling it away from the assembly induces mechanical fracture in the fracture region below the electrically active regions. The mechanical fracture propagates parallel and laterally to the surface of the substrate and below the circuit to produce a thin flexible circuit on a residual substrate. The circuit is under compressive strain that is changed by modifying the stressor layer or residual substrate. Individualized circuits or a circuit may also be defined above the fracture by dividing the circuit into preselected regions with surrounding trenches before fracture. We harvest the circuit(s) by pulling the foil handle away from the assembly.
摘要翻译： 在包括衬底上的半导体电路的组件中施加受控量的应力包括将拉应力金属膜应力层沉积到电路的表面上。 在电路的电活性区域之下建立断裂区域，将箔手柄粘附到组件并将其从组件拉出，从而在电活性区域下方的断裂区域中引起机械断裂。 机械断裂平行且横向地传播到基板的表面并在电路下面，以在残留的基板上产生薄的柔性电路。 电路处于压应变状态，通过改变应力层或残留衬底而改变。 在断裂之前，也可以将断路中的电路划分成具有周围沟槽的预定区域，将个体化电路或电路定义在断裂之上。 我们通过将铝箔手柄拉离组件来收集电路。
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公开(公告)号：US20100311250A1
公开(公告)日：2010-12-09
申请号：US12784688
申请日：2010-05-21
IPC分类号： H01L21/30
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.
摘要翻译： 一种制造薄膜直接带隙半导体活性太阳能电池器件的方法，包括提供具有表面的源极衬底，并且在表面上设置应力层，该应力层具有与源极衬底的表面接触并且结合到源极衬底的表面。 将手柄箔与应力层操作地相关联并且向手柄箔施加力将应力层与源衬底分离，并将源衬底的一部分留在应力层表面上，基本上对应于与表面相接触的区域 源底物。 该部分的厚度不如源层厚。 应力层厚度低于导致源底材自发剥落的厚度。 源极衬底可以包括无机单晶或多晶材料，例如Si，Ge，GaAs，SiC，蓝宝石或GaN。 在一个实施例中，应力层包括柔性材料。
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公开(公告)号：US08247261B2
公开(公告)日：2012-08-21
申请号：US12784688
申请日：2010-05-21
IPC分类号： H01L21/463
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.
摘要翻译： 一种制造薄膜直接带隙半导体活性太阳能电池器件的方法，包括：提供具有表面的源极衬底，并在表面上设置应力层，该应力层具有与源极衬底表面接触并结合的应力层表面积。 将手柄箔与应力层操作地相关联并且向手柄箔施加力将应力层与源衬底分离，并将源衬底的一部分留在应力层表面上，基本上对应于与表面相接触的区域 源底物。 该部分的厚度不如源层厚。 应力层厚度低于导致源底材自发剥落的厚度。 源极衬底可以包括无机单晶或多晶材料，例如Si，Ge，GaAs，SiC，蓝宝石或GaN。 在一个实施例中，应力层包括柔性材料。
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公开(公告)号：US20100310775A1
公开(公告)日：2010-12-09
申请号：US12713560
申请日：2010-02-26
IPC分类号： B05D3/02
CPC分类号： H01L31/075 , H01L21/02002 , H01L31/0725 , H01L31/074 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/548
摘要： A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.
摘要翻译： 从半导体衬底的锭剥落层的方法包括在半导体衬底的锭上形成金属层，其中金属层中的拉伸应力构造成在晶锭中引起断裂; 并在断裂处从锭中去除层。 用于从半导体衬底的锭剥落层的系统包括形成在半导体衬底的锭上的金属层，其中金属层中的拉伸应力被配置为引起锭中的断裂，并且其中该层被配置 在断裂处从锭中移除。
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公开(公告)号：US08450184B2
公开(公告)日：2013-05-28
申请号：US13480329
申请日：2012-05-24
IPC分类号： H01L21/302
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： Manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. The stress layer may comprise a flexible material.
摘要翻译： 制造薄膜直接带隙半导体活性太阳能电池器件包括提供具有表面的源极衬底，并且在表面上设置应力层，其应力层表面积与源极衬底的表面接触并结合。 将手柄箔与应力层操作地相关联并且向手柄箔施加力将应力层与源衬底分离，并将源衬底的一部分留在应力层表面上，基本上对应于与表面相接触的区域 源底物。 该部分的厚度不如源层厚。 应力层厚度低于导致源底材自发剥落的厚度。 源极衬底可以包括无机单晶或多晶材料，例如Si，Ge，GaAs，SiC，蓝宝石或GaN。 应力层可以包括柔性材料。
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公开(公告)号：US20120282782A1
公开(公告)日：2012-11-08
申请号：US13480329
申请日：2012-05-24
IPC分类号： H01L21/30
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： Manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. The stress layer may comprise a flexible material.
摘要翻译： 制造薄膜直接带隙半导体活性太阳能电池器件包括提供具有表面的源极衬底，并且在表面上设置应力层，其应力层表面积与源极衬底的表面接触并结合。 将手柄箔与应力层操作地相关联并且向手柄箔施加力将应力层与源衬底分离，并将源衬底的一部分留在应力层表面上，基本上对应于与表面相接触的区域 源底物。 该部分的厚度不如源层厚。 应力层厚度低于导致源底材自发剥落的厚度。 源极衬底可以包括无机单晶或多晶材料，例如Si，Ge，GaAs，SiC，蓝宝石或GaN。 应力层可以包括柔性材料。
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公开(公告)号：US08633097B2
公开(公告)日：2014-01-21
申请号：US12713572
申请日：2010-02-26
申请人： Stephen W. Bedell , Norma E. Sosa Cortes , Keith E. Fogel , Devendra Sadana , Davood Shahrjerdi , Brent A. Wacaser
发明人： Stephen W. Bedell , Norma E. Sosa Cortes , Keith E. Fogel , Devendra Sadana , Davood Shahrjerdi , Brent A. Wacaser
IPC分类号： H01L21/22 , H01L21/38 , H01L21/385
CPC分类号： H01L31/0304 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/548
摘要： A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer.
摘要翻译： 一种形成单结光伏电池的方法包括在半导体衬底的表面上形成掺杂剂层; 将掺杂剂层扩散到半导体衬底中以形成半导体衬底的掺杂层; 在所述掺杂层上形成金属层，其中所述金属层中的拉伸应力构造成在所述半导体衬底中引起断裂; 在断裂时从半导体衬底去除半导体层; 以及使用半导体层形成单结光伏电池。 单结光伏电池包括掺杂剂，该掺杂层包含扩散到半导体衬底中的掺杂剂; 形成在掺杂层上的图案化导电层; 半导体层，其包括位于掺杂层的与图案化导电层相对的表面上的掺杂层上的半导体衬底; 以及形成在半导体层上的欧姆接触层。
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公开(公告)号：US20130000707A1
公开(公告)日：2013-01-03
申请号：US13614946
申请日：2012-09-13
申请人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Katherine L. Saenger , Davood Shahrjerdi
发明人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Katherine L. Saenger , Davood Shahrjerdi
IPC分类号： H01L31/06
CPC分类号： H01L31/0735 , H01L21/02002 , H01L31/0304 , H01L31/03046 , H01L31/0725 , H01L31/1808 , H01L31/184 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer.
摘要翻译： 一种制造多结光伏（PV）电池的方法包括在衬底上形成包括多个结的叠层，所述多个结中的每一个具有相应的带隙，其中所述多个结从具有最大带隙的结点排序 位于具有最小带隙位于堆叠顶部的基底上的基底上; 在具有最小带隙的结的顶部上形成具有拉伸应力的金属层; 将柔性基板粘附到金属层上; 并且在基板的断裂处从基板剥离半导体层，其中响应于金属层中的拉伸应力而形成断裂。
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公开(公告)号：US20110048516A1
公开(公告)日：2011-03-03
申请号：US12713581
申请日：2010-02-26
IPC分类号： H01L31/10 , H01L31/0216
CPC分类号： H01L31/068 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/547 , Y02E10/548
摘要： A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer.
摘要翻译： 制造多结光伏（PV）电池的方法包括在衬底上提供包括多个结的叠层，所述多个结中的每一个具有相应的带隙，其中所述多个结从具有最小带隙的结点排序 位于具有最大带隙位于堆叠顶部的基底上的基底上; 在具有最大带隙的结的顶部上形成顶部金属层，顶部金属层具有拉伸应力; 将顶部柔性基底粘附到金属层上; 并且在基板的断裂处从基板剥离半导体层，其中响应于顶部金属层中的拉伸应力形成断裂。
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公开(公告)号：US20100307591A1
公开(公告)日：2010-12-09
申请号：US12713572
申请日：2010-02-26
申请人： Stephen W. Bedell , Norma E. Sosa Cortes , Keith E. Fogel , Devendra Sadana , Davood Shahrjerdi , Brent A. Wacaser
发明人： Stephen W. Bedell , Norma E. Sosa Cortes , Keith E. Fogel , Devendra Sadana , Davood Shahrjerdi , Brent A. Wacaser
IPC分类号： H01L31/0304 , H01L31/18
CPC分类号： H01L31/0304 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/548
摘要： A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer.
摘要翻译： 一种形成单结光伏电池的方法包括在半导体衬底的表面上形成掺杂剂层; 将掺杂剂层扩散到半导体衬底中以形成半导体衬底的掺杂层; 在所述掺杂层上形成金属层，其中所述金属层中的拉伸应力构造成在所述半导体衬底中引起断裂; 在断裂时从半导体衬底去除半导体层; 以及使用半导体层形成单结光伏电池。 单结光伏电池包括掺杂剂，该掺杂层包含扩散到半导体衬底中的掺杂剂; 形成在掺杂层上的图案化导电层; 半导体层，其包括位于掺杂层的与图案化导电层相对的表面上的掺杂层上的半导体衬底; 以及形成在半导体层上的欧姆接触层。
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