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公开(公告)号：US20130000707A1
公开(公告)日：2013-01-03
申请号：US13614946
申请日：2012-09-13
申请人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Katherine L. Saenger , Davood Shahrjerdi
发明人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Katherine L. Saenger , Davood Shahrjerdi
IPC分类号： H01L31/06
CPC分类号： H01L31/0735 , H01L21/02002 , H01L31/0304 , H01L31/03046 , H01L31/0725 , H01L31/1808 , H01L31/184 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer.
摘要翻译： 一种制造多结光伏（PV）电池的方法包括在衬底上形成包括多个结的叠层，所述多个结中的每一个具有相应的带隙，其中所述多个结从具有最大带隙的结点排序 位于具有最小带隙位于堆叠顶部的基底上的基底上; 在具有最小带隙的结的顶部上形成具有拉伸应力的金属层; 将柔性基板粘附到金属层上; 并且在基板的断裂处从基板剥离半导体层，其中响应于金属层中的拉伸应力而形成断裂。
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公开(公告)号：US20110048517A1
公开(公告)日：2011-03-03
申请号：US12713592
申请日：2010-02-26
申请人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Katherine L. Saenger , Davood Shahrjerdi
发明人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Katherine L. Saenger , Davood Shahrjerdi
IPC分类号： H01L31/101 , H01L31/18
CPC分类号： H01L31/0735 , H01L21/02002 , H01L31/0304 , H01L31/03046 , H01L31/0725 , H01L31/1808 , H01L31/184 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer.
摘要翻译： 一种制造多结光伏（PV）电池的方法包括在衬底上形成包括多个结的叠层，所述多个结中的每一个具有相应的带隙，其中所述多个结从具有最大带隙的结点排序 位于具有最小带隙位于堆叠顶部的基底上的基底上; 在具有最小带隙的结的顶部上形成具有拉伸应力的金属层; 将柔性基板粘附到金属层上; 并且在基板的断裂处从基板剥离半导体层，其中响应于金属层中的拉伸应力而形成断裂。
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公开(公告)号：US20110048516A1
公开(公告)日：2011-03-03
申请号：US12713581
申请日：2010-02-26
IPC分类号： H01L31/10 , H01L31/0216
CPC分类号： H01L31/068 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/547 , Y02E10/548
摘要： A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer.
摘要翻译： 制造多结光伏（PV）电池的方法包括在衬底上提供包括多个结的叠层，所述多个结中的每一个具有相应的带隙，其中所述多个结从具有最小带隙的结点排序 位于具有最大带隙位于堆叠顶部的基底上的基底上; 在具有最大带隙的结的顶部上形成顶部金属层，顶部金属层具有拉伸应力; 将顶部柔性基底粘附到金属层上; 并且在基板的断裂处从基板剥离半导体层，其中响应于顶部金属层中的拉伸应力形成断裂。
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公开(公告)号：US08823127B2
公开(公告)日：2014-09-02
申请号：US13614953
申请日：2012-09-13
CPC分类号： H01L31/068 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/547 , Y02E10/548
摘要： A multijunction photovoltaic (PV) cell includes a bottom flexible substrate and a bottom metal layer located on the bottom flexible substrate. The multijunction photovoltaic cell also includes a semiconductor layer located on the bottom metal layer and a stack having a plurality of junctions located on the semiconductor layer, each of the plurality of junctions having a respective bandgap. The pluralities of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack.
摘要翻译： 多结光伏（PV）电池包括底部柔性基底和位于底部柔性基底上的底部金属层。 所述多结光伏电池还包括位于所述底部金属层上的半导体层和具有位于所述半导体层上的多个结的叠层，所述多个结中的每一个具有相应的带隙。 多个接合点从具有位于衬底上的最小带隙的接合点排列到具有位于堆叠顶部的最大带隙的接合点。
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公开(公告)号：US20100307572A1
公开(公告)日：2010-12-09
申请号：US12713584
申请日：2010-02-26
申请人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Ghavam Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Ghavam Shahidi , Davood Shahrjerdi
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.
摘要翻译： 用于形成异质结III-V光伏（PV）电池的方法包括从III-V基片的晶片执行基底层的层转移，所述基底层小于约20微米厚; 在基层上形成本征层; 在本征层上形成非晶硅层; 以及在所述非晶硅层上形成透明导电氧化物层。 异质结III-V光伏（PV）电池包括包含III-V衬底的基层，所述基层小于约20微米厚; 位于基层上的本征层; 位于本征层上的非晶硅层; 以及位于非晶硅层上的透明导电氧化物层。
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公开(公告)号：US08802477B2
公开(公告)日：2014-08-12
申请号：US12713584
申请日：2010-02-26
申请人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Ghavam Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Ghavam Shahidi , Davood Shahrjerdi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/762 , H01L21/20 , H01L31/0304
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.
摘要翻译： 用于形成异质结III-V光伏（PV）电池的方法包括从III-V衬底的晶片执行基底层的层转移，所述基底层小于约20微米厚; 在基层上形成本征层; 在本征层上形成非晶硅层; 以及在所述非晶硅层上形成透明导电氧化物层。 异质结III-V光伏（PV）电池包括包含III-V衬底的基层，所述基层小于约20微米厚; 位于基层上的本征层; 位于本征层上的非晶硅层; 以及位于非晶硅层上的透明导电氧化物层。
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公开(公告)号：US20130000708A1
公开(公告)日：2013-01-03
申请号：US13614953
申请日：2012-09-13
IPC分类号： H01L31/06
CPC分类号： H01L31/068 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/547 , Y02E10/548
摘要： A multijunction photovoltaic (PV) cell includes a bottom flexible substrate and a bottom metal layer located on the bottom flexible substrate. The multijunction photovoltaic cell also includes a semiconductor layer located on the bottom metal layer and a stack having a plurality of junctions located on the semiconductor layer, each of the plurality of junctions having a respective bandgap. The pluralities of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack.
摘要翻译： 多结光伏（PV）电池包括底部柔性基底和位于底部柔性基底上的底部金属层。 所述多结光伏电池还包括位于所述底部金属层上的半导体层和具有位于所述半导体层上的多个结的叠层，所述多个结中的每一个具有相应的带隙。 多个接合点从具有位于衬底上的最小带隙的接合点排列到具有位于堆叠顶部的最大带隙的接合点。
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公开(公告)号：US08703521B2
公开(公告)日：2014-04-22
申请号：US12713581
申请日：2010-02-26
CPC分类号： H01L31/068 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/547 , Y02E10/548
摘要： A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer.
摘要翻译： 制造多结光伏（PV）电池的方法包括在衬底上提供包括多个结的叠层，所述多个结中的每一个具有相应的带隙，其中所述多个结从具有最小带隙的结点排序 位于具有最大带隙位于堆叠顶部的基底上的基底上; 在具有最大带隙的结的顶部上形成顶部金属层，顶部金属层具有拉伸应力; 将顶部柔性基底粘附到金属层上; 并且在基板的断裂处从基板剥离半导体层，其中响应于顶部金属层中的拉伸应力形成断裂。
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