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    Fine Grained, Non Banded, Refractory Metal Sputtering Targets with a Uniformly Random Crystallographic Orientation, Method for Making Such Film, and Thin Film Based Devices and Products Made Therefrom
    7.
    发明申请
    Fine Grained, Non Banded, Refractory Metal Sputtering Targets with a Uniformly Random Crystallographic Orientation, Method for Making Such Film, and Thin Film Based Devices and Products Made Therefrom 有权
    具有均匀随机晶体取向的细晶粒，非带状耐火金属溅射靶，制造这种膜的方法以及由此制成的薄膜基器件和产品

    公开(公告)号：US20080271779A1

    公开(公告)日：2008-11-06

    申请号：US11937164

    申请日：2007-11-08

    Applicant: Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann

    Inventor： Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann

    IPC: C23C14/00 ,  B05D1/12 ,  G11B5/62

    CPC classification number: C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    Abstract: The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    Abstract translation: 本发明涉及一种溅射靶，其具有小于44微米的均匀均匀的晶粒结构，不受电子背散射衍射（“EBSD”）测量的优选纹理取向，并且在整个体内不显示晶粒尺寸条带或纹理条带 的目标。 本发明涉及一种具有透镜或扁平晶粒结构的溅射靶，没有通过EBSD测量的优选的织构定向，并且在靶的整个体内不显示晶粒尺寸或纹理条纹，并且其中靶具有结合有层 溅射材料和在背板界面处的至少一个附加层，所述层在背板的CTE和溅射材料层的CTE之间具有热膨胀系数（“CTE”）。 本发明还涉及薄膜及其使用溅射靶和其它应用的应用，例如涂层，太阳能装置，半导体器件等。本发明还涉及一种修复或恢复溅射靶的方法。

    Apparatus and method for viewing an industrial process such as a molten metal atomization process
    9.
    发明授权
    Apparatus and method for viewing an industrial process such as a molten metal atomization process 失效
    用于观察诸如熔融金属雾化工艺的工业过程的装置和方法

    公开(公告)号：US5520371A

    公开(公告)日：1996-05-28

    申请号：US231076

    申请日：1994-04-22

    Applicant: Steven A. Miller ,  Russell S. Miller

    Inventor： Steven A. Miller ,  Russell S. Miller

    IPC: B22F9/08 ,  G01J5/04

    CPC classification number: B22F9/082 ,  G01J5/041 ,  B22F2999/00

    Abstract: An apparatus, system and method for viewing an industrial process in an obscuring environment, such as molten metal atomization, is disclosed. An enclosure defining a chamber for containing a particulate form from atomized liquid metal has a nozzle for atomizing liquid metal mounted thereon in communication with the chamber whereby particles recirculate throughout the chamber. The nozzle being comprised of a cylindrical plenum means and a melt guide tube extending axially therethrough to an exit orifice. The plenum means is configured to provide a jet of atomizing gas converging in an atomizing zone extending from the exit orifice. A viewing means extends through the enclosure to a viewing orifice adjacent the atomization zone, the viewing means being configured to extend a field of view through the chamber to the atomization zone. A purging gas flow is provided in the viewing means to minimize atomized particles from contacting the window, and an image of the atomization zone is generated by viewing through the window.

    Abstract translation: 公开了一种用于在模糊环境中观察工业过程的装置，系统和方法，例如熔融金属雾化。 限定用于从雾化液体金属容纳颗粒形式的室的外壳具有用于雾化安装在其上的与该室连通的液态金属的喷嘴，由此颗粒在整个室中再循环。 喷嘴由圆柱形增压装置和轴向穿过其延伸到出口的熔体引导管组成。 增压装置构造成提供在从出口延伸的雾化区中会聚的雾化气体射流。 观察装置通过外壳延伸到邻近雾化区的观察孔，观察装置构造成将视野通过室延伸到雾化区。 在观察装置中提供净化气体流，以将雾化的颗粒与窗口接触最小化，并且通过观察窗口产生雾化区域的图像。

    Personalization station for programming integrated circuit cards
    10.
    发明授权
    Personalization station for programming integrated circuit cards 失效
    用于编程集成电路卡的个性化台

    公开(公告)号：US5378884A

    公开(公告)日：1995-01-03

    申请号：US180657

    申请日：1994-01-12

    Applicant: Robert W. Lundstrom ,  Steven A. Miller

    Inventor： Robert W. Lundstrom ,  Steven A. Miller

    IPC: G06K13/06 ,  G06K13/04 ,  G06K17/00 ,  G06K7/06

    CPC classification number: G06K17/00 ,  G06K2017/0041

    Abstract: An integrated card programming device for programing an integrated circuit card. The integrated circuit card programing device has a base, a card input platform, and a transport. The transport is operably connected to the base and rotatably mounted about a rotational axis. The transport includes a transport arm radially disposed about the rotational axis. A card picker carriage is mounted on the transport arm. The card picker carriage has two picker arms. One or more personalization stations for programming an integrated circuit card are radially disposed about the transport. The personalization stations can program the cards to the French or ISO standards and are rotatable 180.degree..

    Abstract translation: 用于对集成电路卡进行编程的集成卡编程装置。 集成电路卡编程设备具有基座，卡输入平台和传输。 传送器可操作地连接到基座并围绕旋转轴线可旋转地安装。 输送机包括围绕旋转轴径向设置的输送臂。 卡片选择器托架安装在运输臂上。 卡片选择器托架有两个拾取臂。 用于编程集成电路卡的一个或多个个性化站围绕传送器径向设置。 个性化站可以将卡编程为法国或ISO标准，并可旋转180度。

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