NOVEL USE OF RICE, RICE BRAN OR RICE HULL EXTRACT AS AN HISTAMINE RECEPTOR ANTAGONIST
    1.
    发明申请
    NOVEL USE OF RICE, RICE BRAN OR RICE HULL EXTRACT AS AN HISTAMINE RECEPTOR ANTAGONIST 审中-公开
    新鲜使用的米,米糠或米糠提取物作为组胺受体拮抗剂

    公开(公告)号:US20130171280A1

    公开(公告)日:2013-07-04

    申请号:US13290357

    申请日:2011-11-07

    IPC分类号: A61K36/899

    CPC分类号: A61K36/899 A61K2236/13

    摘要: Disclosed is a novel use of rice, rice bran or rice hull extract as a histamine receptor antagonist. The rice, rice bran or rice hull extract may be used as a natural antihistamine to prevent or treat allergic rhinitis, inflammatory bowel disease, asthma, bronchitis, nausea, gastric and duodenal ulcer, gastroesophageal reflux disease, sleep disorder, anxiety and depression. It provides comparable or better effect of decreasing sleep latency, increasing sleep duration and increasing non-REM sleep as compared to diazepam, which is currently used as sleeping drug. Derived from the natural product rice, rice bran or rice hull, it has no side effect such as cognitive impairment, resistance or dependency even after long-term use.

    摘要翻译: 披露了米,米糠或稻壳提取物作为组胺受体拮抗剂的新用途。 大米,米糠或米壳提取物可用作天然抗组胺药,以预防或治疗过敏性鼻炎,炎性肠病,哮喘,支气管炎,恶心,胃和十二指肠溃疡,胃食管反流病,睡眠障碍,焦虑和抑郁。 与目前用作睡眠药物的地西泮相比,它提供了降低睡眠潜伏期,增加睡眠持续时间和增加非REM睡眠的可比较或更好的效果。 从天然产物米,米糠或稻壳衍生而来,即使长期使用,也不会有认知障碍,抵抗力或依赖性等副作用。

    COMPOSITION FOR PROMOTING MEMORY AND LEARNING ABILITY
    2.
    发明申请
    COMPOSITION FOR PROMOTING MEMORY AND LEARNING ABILITY 审中-公开
    促进记忆和学习能力的组成

    公开(公告)号:US20130171278A1

    公开(公告)日:2013-07-04

    申请号:US13822714

    申请日:2011-09-16

    IPC分类号: A61K36/23 A61K36/31 A61K36/79

    摘要: The present invention relates to a composition for promoting memory or learning ability and to a composition for preventing and treating cognitive impairment, which comprise one, two or more plant extracts selected from the group consisting of Artemisia apiaceae extract, Illicium verum extract and Lepidium apefalum extract. The present invention has the effect of inhibiting neural cell damage, especially, neural cells of the basal part of the cerebrum by inhibiting acetylcholinesterase activity and through antioxidative activity (for example, inhibiting the generation of oxidative reactive species) and affinity for an NMDA receptor. The compositions of the present invention may have the effect of not only promoting memory or learning ability by protecting neural cells and preventing damage to neural cells but also of preventing and treating diseases caused by cognitive impairment. In addition, according to the present invention, Lepidium apefalum extract is provided as basic substance for pharmaceuticals or food which has efficacy in promoting memory or learning ability or efficacy for preventing and treating cognitive impairment.

    摘要翻译: 本发明涉及用于促进记忆或学习能力的组合物和用于预防和治疗认知障碍的组合物,其包含一种,两种或更多种选自蒿科蒿提取物,ium藜提取物和韭菜提取物的植物提取物 。 本发明通过抑制乙酰胆碱酯酶活性和通过抗氧化活性(例如,抑制氧化反应物质的产生)和对NMDA受体的亲和力,具有抑制神经细胞损伤,特别是抑制大脑基底部分的神经细胞的作用。 本发明的组合物可以具有不仅通过保护神经细胞并防止对神经细胞的损伤而且通过预防和治疗由认知障碍引起的疾病而促进记忆或学习能力的效果。 此外,根据本发明,提供了作为用于促进记忆或学习能力或预防和治疗认知功能障碍的功效的药物或食品的碱性物质。

    Reconfigurable base station antenna
    3.
    发明授权
    Reconfigurable base station antenna 有权
    可重构基站天线

    公开(公告)号:US08743008B2

    公开(公告)日:2014-06-03

    申请号:US13517088

    申请日:2010-12-21

    IPC分类号: H01Q21/12

    摘要: The invention relates to a base station antenna, that includes two or more reflector plates, each provided with a radiating element. The base station antenna also includes a reflector plate connecting member connected to each reflector plate for enabling the rotation of the reflector plates. The base station antenna also includes a reflector plate controller providing control signals for controlling the rotation and stoppage of the reflector plates.

    摘要翻译: 本发明涉及一种基站天线,其包括两个或多个反射板,每个反射板均设有辐射元件。 基站天线还包括连接到每个反射板的反射板连接构件,以使反射板能够转动。 基站天线还包括提供用于控制反射板的旋转和停止的控制信号的反射板控制器。

    Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof
    4.
    发明授权
    Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof 有权
    包含界面控制层的非易失性电相变存储器件及其制备方法

    公开(公告)号:US07851778B2

    公开(公告)日:2010-12-14

    申请号:US11805827

    申请日:2007-05-24

    IPC分类号: H01L47/00 H01L21/00

    摘要: The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other,wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

    摘要翻译: 本发明涉及一种非挥发性电相变存储器件,其包括衬底,沉积在衬底上的第一层间电介质膜,形成在第一介电层上的底部电极层,形成在底部电极层上的第二层间电介质膜 沉积在第二层间电介质膜上的相变材料层和形成在所述相变材料层上的顶部电极层,所述底部电极层通过形成在所述相变材料层中的接触孔与所述相变材料层接触, 第二层间电介质膜,并填充有相变材料或底部电极材料,使得相变层和底部电极层彼此紧密接触,其中界面控制层形成在接触孔的界面处, 相变层和底部电极层,所述界面控制层具有强的作用 与相变材料的化学键以及电阻率和热导率值低于底部电极材料。

    Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof
    5.
    发明申请
    Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof 有权
    包含界面控制层的非易失性电相变存储器件及其制备方法

    公开(公告)号:US20070272987A1

    公开(公告)日:2007-11-29

    申请号:US11805827

    申请日:2007-05-24

    IPC分类号: H01L29/76 H01L29/00

    摘要: The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

    摘要翻译: 本发明涉及一种非挥发性电相变存储器件,其包括衬底,沉积在衬底上的第一层间电介质膜,形成在第一介电层上的底部电极层,形成在底部电极层上的第二层间电介质膜 沉积在第二层间电介质膜上的相变材料层和形成在所述相变材料层上的顶部电极层,所述底部电极层通过形成在所述相变材料层中的接触孔与所述相变材料层接触, 第二层间电介质膜,并填充有相变材料或底部电极材料,使得相变层和底部电极层彼此紧密接触,其中界面控制层形成在接触孔的界面处, 相变层和底部电极层,所述界面控制层具有强的作用 与相变材料的化学键以及电阻率和热导率值低于底部电极材料。

    Methods of manufacturing magnetoresistive random access memory devices
    6.
    发明授权
    Methods of manufacturing magnetoresistive random access memory devices 有权
    制造磁阻随机存取存储器件的方法

    公开(公告)号:US09159767B2

    公开(公告)日:2015-10-13

    申请号:US14182316

    申请日:2014-02-18

    IPC分类号: H01L43/12 H01L27/22

    摘要: In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.

    摘要翻译: 在MRAM器件的方法中,第一和第二图案在第二方向上交替且重复地形成在衬底上。 每个第一图案和每个第二图案沿垂直于第二方向的第一方向延伸。 去除一些第二图案以形成沿第一方向延伸的第一开口。 形成填充第一开口的源极线。 在第一和第二图案和源极线上形成掩模。 掩模包括沿第一方向的第二开口,每个开口沿第二方向延伸。 由第二开口暴露的第二图案的部分被去除以形成第三开口。 形成填充第三开口的第三图案。 由第一图案和第三图案包围的第二图案被去除以形成第四开口。 形成填充第四开口的接触塞。

    MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    7.
    发明申请
    MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    磁性随机访问存储器件及其制造方法

    公开(公告)号:US20140264672A1

    公开(公告)日:2014-09-18

    申请号:US14182316

    申请日:2014-02-18

    IPC分类号: H01L27/22 H01L43/12

    摘要: In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.

    摘要翻译: 在MRAM器件的方法中,第一和第二图案在第二方向上交替且重复地形成在衬底上。 每个第一图案和每个第二图案沿垂直于第二方向的第一方向延伸。 去除一些第二图案以形成沿第一方向延伸的第一开口。 形成填充第一开口的源极线。 在第一和第二图案和源极线上形成掩模。 掩模包括沿第一方向的第二开口,每个开口沿第二方向延伸。 由第二开口暴露的第二图案的部分被去除以形成第三开口。 形成填充第三开口的第三图案。 由第一图案和第三图案包围的第二图案被去除以形成第四开口。 形成填充第四开口的接触塞。

    RECONFIGURABLE BASE STATION ANTENNA
    9.
    发明申请
    RECONFIGURABLE BASE STATION ANTENNA 审中-公开
    可重建基站天线

    公开(公告)号:US20090312057A1

    公开(公告)日:2009-12-17

    申请号:US12484379

    申请日:2009-06-15

    IPC分类号: H04M1/00

    摘要: A reconfigurable base station (BS) antenna permits increasing cell capacity by dynamically varying an antenna's configuration according to a wave propagation environment and subscriber distribution. At least two reflective plates each have at least one radiator, a ray dome accommodates the two reflective plates in a hollow interior, and upper and lower caps are combined with upper and lower portions of the ray dome, respectively. Reflective connection members are connected to the respective two reflective plates and the upper and lower caps, so that the two reflective plates are rotatable, and at least one force generator provides a rotation force, and at least one force transfer mechanical portion transfers the rotation force received from the force generator to at least one reflective plate and controls a rotation angle of the at least one reflective plate. At least one of the force generator and the force transfer mechanical portion is combined with the two reflective plates.

    摘要翻译: 可重构基站(BS)天线通过根据波传播环境和用户分配动态地改变天线的配置来允许增加小区容量。 至少两个反射板各自具有至少一个散热器,射线圆顶将两个反射板容纳在中空的内部中,并且上盖和下盖分别与光穹顶的上部和下部组合。 反射连接构件连接到相应的两个反射板和上盖和下盖,使得两个反射板可旋转,并且至少一个力发生器提供旋转力,并且至少一个力传递机械部分将旋转力 从所述力发生器接收到至少一个反射板并且控制所述至少一个反射板的旋转角度。 力发生器和力传递机械部分中的至少一个与两个反射板组合。

    Multi-line phase shifter having a fixed plate and a mobile plate in slideable engagement to provide vertical beam-tilt
    10.
    发明授权
    Multi-line phase shifter having a fixed plate and a mobile plate in slideable engagement to provide vertical beam-tilt 有权
    多线移相器具有固定板和可滑动接合的移动板,以提供垂直的光束倾斜

    公开(公告)号:US08907744B2

    公开(公告)日:2014-12-09

    申请号:US13319389

    申请日:2010-05-11

    IPC分类号: H01P1/18 H01Q3/30 H01Q3/26

    CPC分类号: H01Q3/26 H01P1/184 H01Q3/30

    摘要: A Multi-Line Phase Shifter (MLPS) for a vertical beam tilt-controlled antenna is provided, in which a housing is shaped into an elongated rectangular box, a fixed plate is attached on an inner bottom surface of the housing and has transmission lines printed thereon, the transmission lines forming part of a plurality of phase shifting patterns and a plurality of signal division patterns, for dividing an input signal and shifting phases of divided signals, and a mobile plate is installed within the housing, movably along a length direction at a position where the mobile plate contacts a surface of the fixed plate, and has transmission lines printed thereon, the transmission lines forming a remaining part of the plurality of phase shifting patterns for phase shifting by forming variable lines through coupling with the part of the plurality of phase shifting patterns.

    摘要翻译: 提供了一种用于垂直光束倾斜控制天线的多行移相器(MLPS),其中壳体被成形为细长矩形盒,固定板附接在壳体的内底表面上并且具有印刷的传输线 在其上形成有多个相移图案的一部分的传输线和用于分割输入信号和分割信号的移相的多个信号分割图案以及移动板安装在壳体内,沿着长度方向可移动地 移动板接触固定板的表面并且具有印刷在其上的传输线的位置,传输线通过与多个部分的一部分联接形成可变线而形成用于相移的多个移相模式的剩余部分 的相移模式。