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公开(公告)号：US20060086932A1
公开(公告)日：2006-04-27
申请号：US11098278
申请日：2005-04-04
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/0213 , H01S5/3216 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.
摘要翻译： 本发明提供了一种氮化物基半导体器件，其包括具有量子阱层和量子势垒层的有源层，其中该器件包括由至少两个重复的第一氮化物半导体层和第二氮化物半导体层形成的电子发射层 在n型氮化物半导体层和有源层之间具有不同的组成，第一氮化物半导体层的能带隙大于量子阱层的能带隙，小于量子势垒层的能带隙，并且更接近于活性层 层，并且第二氮化物半导体层具有至少比相邻的第一氮化物半导体层的能带隙高的能带隙，并且具有能够隧穿电子的厚度。
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2.发明申请Nitride based semiconductor having improved external quantum efficiency and fabrication method thereof 审中-公开具有改进的外部量子效率的氮化物基半导体及其制造方法公开(公告)号：US20050224816A1
公开(公告)日：2005-10-13
申请号：US10873239
申请日：2004-06-23
摘要： A surface treated nitride semiconductor in use for a light emitting diode, in which an n-cladding layer is formed on a substrate. An active layer having a multiple quantum well structure is formed on the n-cladding layer. A p-cladding layer is formed on the active layer. A p-capping layer is formed on the p-cladding layer in a low temperature range in which single crystal growth does not take place. The p-capping layer has a nanoscale roughened structure formed in an upper surface thereof via heat treatment in a high temperature range in which at least partial crystallization takes place. The nanoscale roughened structure reduces total internal reflection of the nitride semiconductor thereby improving external quantum efficiency thereof.
摘要翻译： 用于发光二极管的表面处理氮化物半导体，其中在基板上形成n包层。 在n包层上形成具有多量子阱结构的有源层。 在活性层上形成p-p层。 p型覆盖层在不发生单晶生长的低温范围内形成在p型覆层上。 p覆盖层具有通过在至少发生部分结晶的高温范围内的热处理而在其上表面形成的纳米级粗糙结构。 纳米级粗糙结构减少氮化物半导体的全内反射，从而提高其外部量子效率。
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公开(公告)号：US20080001138A1
公开(公告)日：2008-01-03
申请号：US11380415
申请日：2006-04-26
IPC分类号： H01L33/00
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0
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4.发明申请Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same 审中-公开氮化镓系半导体发光元件及其制造方法公开(公告)号：US20050269583A1
公开(公告)日：2005-12-08
申请号：US10899035
申请日：2004-07-27
摘要： This invention pertains to a gallium nitride-based semiconductor light-emitting device, in which nano-sized, fine protrusions are formed on an upper surface of a p-type clad layer without a deterioration of crystallinity and electric conductivity to improve light extraction efficiency, and a method of fabricating the same. After a first conductive gallium nitride-based semiconductor layer and an active layer are grown on a substrate under typical growth conditions, a second conductive gallium nitride-based semiconductor layer is grown on a polarity conversion layer containing a MgN-based single crystal and formed on the active layer, so that a polarity of the second conductive gallium nitride-based semiconductor layer is converted into an N polarity, thereby roughing a surface thereof.
摘要翻译： 本发明涉及一种氮化镓基半导体发光器件，其中在p型覆层的上表面上形成纳米尺寸的微细突起，而不会导致结晶性和导电性的劣化，从而提高光提取效率， 及其制造方法。 在典型的生长条件下在第一导电氮化镓基半导体层和有源层生长在衬底上之后，在包含MgN基单晶的极性转换层上生长第二导电氮化镓基半导体层，并形成在 有源层，使得第二导电氮化镓系半导体层的极性转换为N极性，从而粗糙化其表面。
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公开(公告)号：US20060091376A1
公开(公告)日：2006-05-04
申请号：US11098802
申请日：2005-04-05
IPC分类号： H01L29/06
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
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公开(公告)号：US20050179027A1
公开(公告)日：2005-08-18
申请号：US10890215
申请日：2004-07-14
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0
摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0
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公开(公告)号：US20060226416A1
公开(公告)日：2006-10-12
申请号：US11332688
申请日：2006-01-13
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06 , H01S5/2004 , H01S5/3095 , H01S5/3412 , H01S5/34333
摘要： The invention relates to a nitride semiconductor device having electron-emitting. In the device, an n-type nitride semiconductor layer is formed over a substrate, and an active layer is formed over the n-type nitride semiconductor layer. Also, a p-type nitride semiconductor layer is formed on the active layer. The active layer is formed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer and includes a quantum well layer and a quantum barrier layer. Further, an electron-emitting layer is formed between the n-type nitride semiconductor layer and the active layer. The electron-emitting layer includes a nitride semiconductor quantum dot layer formed on the n-type nitride semiconductor layer and having a composition expressed by AlXInyGa1-X-y)N, where 0≦x≦1 and 0≦y≦1, and a resonance tunnel layer formed on the nitride semiconductor quantum dot layer and having energy band gap bigger than that of adjacent quantum dot layer.
摘要翻译： 本发明涉及具有电子发射的氮化物半导体器件。 在器件中，在衬底上形成n型氮化物半导体层，并且在n型氮化物半导体层上形成有源层。 此外，在有源层上形成p型氮化物半导体层。 有源层形成在p型氮化物半导体层和n型氮化物半导体层之间，包括量子阱层和量子势垒层。 此外，在n型氮化物半导体层和有源层之间形成电子发射层。 电子发射层包括形成在n型氮化物半导体层上的氮化物半导体量子点层，并且具有由Al x In 1 Y 1 Ga -Xy）N，其中0 <= x <= 1且0 <= y <= 1，以及形成在氮化物半导体量子点层上并具有大于相邻量子能带隙的能带隙的谐振隧道层 点层。
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8.发明申请Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity 有权氮化物半导体发光器件具有静电放电（ESD）保护能力公开(公告)号：US20060060880A1
公开(公告)日：2006-03-23
申请号：US11053906
申请日：2005-02-10
IPC分类号： H01L29/22
CPC分类号： H01L27/15 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。
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公开(公告)号：USD570780S1
公开(公告)日：2008-06-10
申请号：US29212502
申请日：2004-09-02
申请人： Frank Deng , Kyu Lee , Ahmad Aqqad
设计人： Frank Deng , Kyu Lee , Ahmad Aqqad
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