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公开(公告)号：US20060086932A1
公开(公告)日：2006-04-27
申请号：US11098278
申请日：2005-04-04
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/0213 , H01S5/3216 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.
摘要翻译： 本发明提供了一种氮化物基半导体器件，其包括具有量子阱层和量子势垒层的有源层，其中该器件包括由至少两个重复的第一氮化物半导体层和第二氮化物半导体层形成的电子发射层 在n型氮化物半导体层和有源层之间具有不同的组成，第一氮化物半导体层的能带隙大于量子阱层的能带隙，小于量子势垒层的能带隙，并且更接近于活性层 层，并且第二氮化物半导体层具有至少比相邻的第一氮化物半导体层的能带隙高的能带隙，并且具有能够隧穿电子的厚度。
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公开(公告)号：US20050179027A1
公开(公告)日：2005-08-18
申请号：US10890215
申请日：2004-07-14
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0
摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0
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公开(公告)号：US20080001138A1
公开(公告)日：2008-01-03
申请号：US11380415
申请日：2006-04-26
IPC分类号： H01L33/00
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0
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4.发明申请Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same 审中-公开氮化镓系半导体发光元件及其制造方法公开(公告)号：US20050269583A1
公开(公告)日：2005-12-08
申请号：US10899035
申请日：2004-07-27
摘要： This invention pertains to a gallium nitride-based semiconductor light-emitting device, in which nano-sized, fine protrusions are formed on an upper surface of a p-type clad layer without a deterioration of crystallinity and electric conductivity to improve light extraction efficiency, and a method of fabricating the same. After a first conductive gallium nitride-based semiconductor layer and an active layer are grown on a substrate under typical growth conditions, a second conductive gallium nitride-based semiconductor layer is grown on a polarity conversion layer containing a MgN-based single crystal and formed on the active layer, so that a polarity of the second conductive gallium nitride-based semiconductor layer is converted into an N polarity, thereby roughing a surface thereof.
摘要翻译： 本发明涉及一种氮化镓基半导体发光器件，其中在p型覆层的上表面上形成纳米尺寸的微细突起，而不会导致结晶性和导电性的劣化，从而提高光提取效率， 及其制造方法。 在典型的生长条件下在第一导电氮化镓基半导体层和有源层生长在衬底上之后，在包含MgN基单晶的极性转换层上生长第二导电氮化镓基半导体层，并形成在 有源层，使得第二导电氮化镓系半导体层的极性转换为N极性，从而粗糙化其表面。
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5.发明申请Nitride based semiconductor having improved external quantum efficiency and fabrication method thereof 审中-公开具有改进的外部量子效率的氮化物基半导体及其制造方法公开(公告)号：US20050224816A1
公开(公告)日：2005-10-13
申请号：US10873239
申请日：2004-06-23
摘要： A surface treated nitride semiconductor in use for a light emitting diode, in which an n-cladding layer is formed on a substrate. An active layer having a multiple quantum well structure is formed on the n-cladding layer. A p-cladding layer is formed on the active layer. A p-capping layer is formed on the p-cladding layer in a low temperature range in which single crystal growth does not take place. The p-capping layer has a nanoscale roughened structure formed in an upper surface thereof via heat treatment in a high temperature range in which at least partial crystallization takes place. The nanoscale roughened structure reduces total internal reflection of the nitride semiconductor thereby improving external quantum efficiency thereof.
摘要翻译： 用于发光二极管的表面处理氮化物半导体，其中在基板上形成n包层。 在n包层上形成具有多量子阱结构的有源层。 在活性层上形成p-p层。 p型覆盖层在不发生单晶生长的低温范围内形成在p型覆层上。 p覆盖层具有通过在至少发生部分结晶的高温范围内的热处理而在其上表面形成的纳米级粗糙结构。 纳米级粗糙结构减少氮化物半导体的全内反射，从而提高其外部量子效率。
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公开(公告)号：US20060091376A1
公开(公告)日：2006-05-04
申请号：US11098802
申请日：2005-04-05
IPC分类号： H01L29/06
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
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公开(公告)号：US20050224824A1
公开(公告)日：2005-10-13
申请号：US10911562
申请日：2004-08-05
IPC分类号： H01L21/205 , H01L29/22 , H01L33/12 , H01L33/32
摘要： Provided is a gallium nitride-based semiconductor light-emitting device comprising a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single crystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
摘要翻译： 提供一种氮化镓系半导体发光元件，其包含具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。
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公开(公告)号：US20050285125A1
公开(公告)日：2005-12-29
申请号：US10939361
申请日：2004-09-14
摘要： The present invention provides a nitride semiconductor device comprising an active layer of a quantum well structure, a first conductive clad layer and a second conductive clad layer. The first conductive clad layer is made of the quaternary nitride semiconductor InAlGaN having a lattice constant equal to or larger than that of the active layer and includes a first nitride semiconductor layer having an energy band gap larger than that of the active layer, a second nitride semiconductor layer having an energy band gap smaller than that of the first nitride semiconductor layer and a third nitride semiconductor layer having an energy band gap larger than that of the second nitride semiconductor layer, sequentially closer to the active layer.
摘要翻译： 本发明提供一种氮化物半导体器件，其包括量子阱结构的有源层，第一导电覆层和第二导电覆层。 第一导电覆层由具有等于或大于有源层的晶格常数的四氮化硅半导体InAlGaN制成，并且包括具有比有源层大的能带隙的第一氮化物半导体层，第二氮化物 具有比第一氮化物半导体层的能带隙小的能带隙的半导体层和具有比第二氮化物半导体层的能带隙大的能带隙的第三氮化物半导体层，依次更靠近有源层。
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公开(公告)号：US20060006407A1
公开(公告)日：2006-01-12
申请号：US11052103
申请日：2005-02-08
IPC分类号： H01L29/24
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译： 本发明提供一种氮化物半导体器件。 氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。 在n型氮化物半导体层上形成有源层。 在有源层上形成第一p型氮化物半导体层。 在第一p型氮化物半导体层上形成微结构化的电流扩散图案。 电流扩散图案由绝缘材料制成。 在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。
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10.发明申请公开(公告)号：US20060079073A1
公开(公告)日：2006-04-13
申请号：US11235278
申请日：2005-09-27
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。
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