公开(公告)号：US08847300B2

公开(公告)日：2014-09-30

申请号：US12640491

申请日：2009-12-17

申请人： Sung-Jin Whang ,  Moon-Sig Joo ,  Kwon Hong ,  Jung-Yeon Lim ,  Won-Kyu Kim ,  Bo-Min Seo ,  Kyoung-Eun Chang

发明人： Sung-Jin Whang ,  Moon-Sig Joo ,  Kwon Hong ,  Jung-Yeon Lim ,  Won-Kyu Kim ,  Bo-Min Seo ,  Kyoung-Eun Chang

IPC分类号： H01L29/76 ,  H01L29/788 ,  H01L27/108 ,  H01L29/423 ,  H01L21/28 ,  H01L23/00 ,  H01L21/321 ,  H01L29/41

CPC分类号： H01L21/28518 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/321 ,  H01L21/7685 ,  H01L24/02 ,  H01L27/10873 ,  H01L29/413 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881 ,  H01L2224/0401 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/04941 ,  H01L2924/12032 ,  H01L2924/00

摘要： A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.

摘要翻译： 一种半导体器件，包括导电层，形成在导电层上的扩散阻挡层，包括难熔金属化合物，并在表面处理之后获得，以及形成在扩散阻挡层上的金属硅化物层。 通过表面处理增加扩散阻挡层的表面能，可以改善扩散阻挡层和金属硅化物层之间的粘合性。 因此，尽管金属硅化物层在高温工艺中熔合，但是可以防止在扩散阻挡层和金属硅化物层之间的界面处产生空隙。 此外，通过表面处理增加导电层的表面能，可以增加导电层与扩散阻挡层之间的粘合性。

公开(公告)号：US20100283096A1

公开(公告)日：2010-11-11

申请号：US12640491

申请日：2009-12-17

申请人： Sung-Jin Whang ,  Moon-Sig Joo ,  Kwon Hong ,  Jung-Yeon Lim ,  Won-Kyu Kim ,  Bo-Min Seo ,  Kyoung-Eun Chang

发明人： Sung-Jin Whang ,  Moon-Sig Joo ,  Kwon Hong ,  Jung-Yeon Lim ,  Won-Kyu Kim ,  Bo-Min Seo ,  Kyoung-Eun Chang

IPC分类号： H01L29/792 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L21/28518 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/321 ,  H01L21/7685 ,  H01L24/02 ,  H01L27/10873 ,  H01L29/413 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881 ,  H01L2224/0401 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/04941 ,  H01L2924/12032 ,  H01L2924/00

摘要： A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.

摘要翻译： 一种半导体器件，包括导电层，形成在导电层上的扩散阻挡层，包括难熔金属化合物，并在表面处理之后获得，以及形成在扩散阻挡层上的金属硅化物层。 通过表面处理增加扩散阻挡层的表面能，可以改善扩散阻挡层和金属硅化物层之间的粘合性。 因此，尽管金属硅化物层在高温工艺中熔合，但是可以防止在扩散阻挡层和金属硅化物层之间的界面处产生空隙。 此外，通过表面处理增加导电层的表面能，可以增加导电层与扩散阻挡层之间的粘合性。