公开(公告)号：US20060093908A1

公开(公告)日：2006-05-04

申请号：US11253221

申请日：2005-10-18

申请人： Sung-Min Hwang ,  Kichul Hong ,  Hyang Lee ,  Chang Ahn ,  Kyong Kang ,  JeongSam Son

发明人： Sung-Min Hwang ,  Kichul Hong ,  Hyang Lee ,  Chang Ahn ,  Kyong Kang ,  JeongSam Son

IPC分类号： H01M2/08 ,  H01M2/02

CPC分类号： H01M2/0257 ,  H01M2/0277 ,  H01M2/0285 ,  H01M2/0287 ,  H01M2/0292 ,  H01M10/0525 ,  H01M2002/0297

摘要： Provided is a secondary battery having an electrode assembly installed in a battery case made up of a laminated sheet composed of an outer coating layer of a polymer film, a barrier layer of a metal foil and an inner sealant layer of a polyolefin material, wherein the metal foil of the barrier layer is formed of an aluminum alloy, the outer coating layer is formed of polyethylene naphthalate (PEN) and/or the outer surface of the outer coating layer is provided with a polyethylene naphthalate (PET) layer, and wherein the battery has a nail penetration resistance force of more than 6.5 kgf. The battery in accordance with the present invention exhibits further improved safety due to the ability to significantly reduce the probability of invasion, ignition or explosion as compared to conventional batteries, even when the battery is exposed to external physical impact or is pressed by sharp objects.

摘要翻译： 本发明提供一种二次电池，其具有安装在由聚合物膜的外涂层，金属箔的阻挡层和聚烯烃材料的内密封层构成的层叠片构成的电池壳体中的电极组件，其中， 阻挡层的金属箔由铝合金形成，外涂层由聚萘二甲酸乙二醇酯（PEN）形成，和/或外涂层的外表面设置有聚萘二甲酸乙二醇酯（PET）层，其中， 电池具有超过6.5 kgf的指甲穿透阻力。 与常规电池相比，即使当电池暴露于外部物理冲击或被尖锐物体按压时，由于能够显着降低入侵，点燃或爆炸的可能性，本发明的电池进一步提高了安全性。

公开(公告)号：US20050191549A1

公开(公告)日：2005-09-01

申请号：US11044757

申请日：2005-01-27

申请人： Hee Kang ,  Hyang Lee ,  Oh Hyun ,  Chang Ahn ,  Sung-Min Hwang

发明人： Hee Kang ,  Hyang Lee ,  Oh Hyun ,  Chang Ahn ,  Sung-Min Hwang

IPC分类号： H01M2/02 ,  H01M2/08 ,  H01M2/30 ,  H01M10/04 ,  H01M10/05 ,  H01M10/0585 ,  H01M10/0587 ,  H01M10/38 ,  H01M10/42

CPC分类号： H01M2/021 ,  H01M10/04 ,  H01M10/058 ,  H01M10/425

摘要： The present invention provides a battery having a structure for increasing the power storage capacity and output thereof In accordance with the present invention, in a battery comprising an electrode assembly including anode plates, cathode plates and separators; and a battery case, both side bonding portions of which are folded toward adjacent sides thereof, for accommodating the electrode assembly and a designated amount of electrolyte, and sealing the electrode assembly such that two electrode terminals connected to corresponding electrode taps of the anode and cathode plates of the electrode assembly are exposed to the outside, an upper bonding portion of the battery case is folded toward the upper end of the battery case, and/or common portions of the upper bonding portion and both side portions of the battery case are cut off, and/or inner corners corresponding to the upper bonding portion have larger radiuses of curvature, and/or receipt portions for receiving the electrode assembly are respectively formed in upper and lower bodies of the battery case. The battery having the above structure has high power storage capacity and output at the same size of the battery package, and high sealing capacity and safety.

摘要翻译： 本发明提供一种具有增加蓄电能力和输出结构的电池。根据本发明，在包括阳极板，阴极板和隔板的电极组件的电池中， 以及电池壳体，其两侧接合部分朝向其相邻侧面折叠，用于容纳电极组件和指定量的电解质，并且密封电极组件，使得连接到阳极和阴极的相应电极抽头的两个电极端子 电极组件的板暴露于外部，电池壳体的上接合部分朝向电池壳体的上端折叠，和/或电池壳体的上接合部分和两侧部分的共同部分被切割 和/或对应于上部接合部分的内角具有较大的曲率半径，和/或用于接收电极组件的接收部分别形成在电池壳体的上部和下部主体中。 具有上述结构的电池具有高的蓄电容量和与电池组件相同尺寸的输出，并且具有高密封能力和安全性。

公开(公告)号：US20050123827A1

公开(公告)日：2005-06-09

申请号：US10992800

申请日：2004-11-19

申请人： Hee Kang ,  Oh Hyun ,  Chang Ahn ,  Hyang Lee

发明人： Hee Kang ,  Oh Hyun ,  Chang Ahn ,  Hyang Lee

IPC分类号： H01M4/13 ,  H01M10/04 ,  H01M10/05 ,  H01M10/0525 ,  H01M10/0585 ,  H01M4/02 ,  H01M6/42

CPC分类号： H01M4/0404 ,  H01M4/04 ,  H01M4/70 ,  H01M10/04 ,  H01M10/0413 ,  H01M10/0525 ,  H01M10/0585 ,  H01M10/38 ,  H01M10/4235

摘要： Provided is a cell wherein out of electrodes constituting the cell, the outermost two electrodes are both cathodes, cathode current collectors of the cathodes are single-side coated with cathode active materials on the first surfaces thereof, other sides of cathode current collectors non-coated with cathode active materials are disposed toward the outside of a cell assembly and the thickness of cathode current collectors is 70 to 150% of that of the cathode active material coated layer. The cell in accordance with the present invention exhibits excellent safety in a nail penetration test.

摘要翻译： 提供一种单元，其中，构成单元的电极中，最外面的两个电极都是阴极，阴极的阴极集电体在其第一表面上单面涂覆有阴极活性材料，阴极集电体的另一侧未涂覆 阴极活性物质朝向电池组件的外侧设置，阴极集电体的厚度为正极活性物质涂层的厚度的70〜150％。 根据本发明的细胞在指甲穿透试验中表现出优异的安全性。

公开(公告)号：US20060125041A1

公开(公告)日：2006-06-15

申请号：US11296152

申请日：2005-12-06

申请人： Jong Yang ,  In Baek ,  Ki Im ,  Chang Ahn ,  Won Cho ,  Seong Lee

发明人： Jong Yang ,  In Baek ,  Ki Im ,  Chang Ahn ,  Won Cho ,  Seong Lee

IPC分类号： H01L27/095

CPC分类号： H01L29/66659 ,  H01L21/26586 ,  H01L21/28052 ,  H01L21/28202 ,  H01L29/495 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66643 ,  H01L29/7835 ,  H01L29/7839

摘要： A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region. The drain includes a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.

摘要翻译： 提供了使用冲击电离的晶体管及其制造方法。 栅极电介质层，栅极以及第一和第二间隔物形成在半导体衬底上。 第一杂质层与第一间隔物隔开形成，并且通过使用栅极和第一和第二间隔物作为掩模在半导体衬底上进行倾斜离子注入，形成第二杂质层与其间的第二间隔物膨胀和重叠。 源极和漏极分别形成在半导体衬底上以与第一和第二间隔物自对准，由此在半导体衬底中的源极和漏极之间限定电离区域。 源包括与电离区形成肖特基结的第一硅化物层。 漏极包括与第二间隔物重叠的第二杂质层的一部分和与第二间隔物对准的第二硅化物层以与第二杂质层形成欧姆接触。

公开(公告)号：US07372811B1

公开(公告)日：2008-05-13

申请号：US09924278

申请日：2001-08-07

申请人： Chang Ahn ,  Swaminathan Sundararaman ,  Ronak Desai

发明人： Chang Ahn ,  Swaminathan Sundararaman ,  Ronak Desai

IPC分类号： H04J3/14 ,  H04L12/26

CPC分类号： H04L12/66

摘要： A system and method for load balancing transmissions across a multilink frame relay connection is disclosed. A credit value is assigned to each bundle link in the multilink based on the amount of data transmitted over a set period of time. Frames or frame fragments are sent over the link with the highest credit value. Credit is subtracted from the link in proportion to the size of the frame or frame fragment. When two or more links have the same credit value, the frame or fragment is sent over the slowest link. The credit values are reset when a specified time period has passed, a link has a negative credit value, or all the links have a credit value of zero.

摘要翻译： 公开了一种用于在多链路帧中继连接上负载平衡传输的系统和方法。 基于在一段时间内发送的数据量，将信用值分配给多链路中的每个捆绑链路。 帧或帧片段通过具有最高信用值的链路发送。 从链接中减去与帧或帧片段大小成比例的信用。 当两个或多个链接具有相同的信用值时，帧或片段通过最慢的链路发送。 当指定的时间段过去，链接具有负的信用值，或者所有链接的信用值为零时，信用值将被重置。

公开(公告)号：US07184402B1

公开(公告)日：2007-02-27

申请号：US09944782

申请日：2001-08-30

申请人： Rohit Sharma ,  Chang Ahn ,  Swaminathan Sundararaman

发明人： Rohit Sharma ,  Chang Ahn ,  Swaminathan Sundararaman

IPC分类号： H04L12/46

CPC分类号： H04L47/10 ,  H04L47/125 ,  H04L47/16

摘要： A distribution pattern is established to distribute multilink frame relay (MFR) fragments. The distribution pattern includes a sequence of link entries associated with links in a link bundle. A number of link entries in the distribution pattern is determined by dividing a total link speed of the link bundle by a minimum possible link speed supported by a system. Each link entry is placed in the distribution pattern when the associated link is capable of transmitting a current fragment in a fastest transmit time. The fastest transmit time is determined based on the link speed of the link and a transmit time for the link to transmit other fragments previously allocated to that link. The fragments are distributed to the links in the link bundle according to the distribution pattern from a first link entry to a last link entry in the distribution pattern. The distribution pattern is repeated after the last link entry.

摘要翻译： 建立分布模式以分发多链路帧中继（MFR）片段。 分发模式包括与链接束中的链接相关联的链接条目的序列。 通过将链路束的总链路速度除以系统支持的最小可能链路速度来确定分配模式中的多个链路条目。 当相关联的链路能够以最快的发送时间发送当前片段时，每个链接条目被放置在分布模式中。 最快的发送时间是基于链路的链路速度和链路的传输时间来确定的，以传送先前分配给该链路的其他分段。 根据从分布模式中的第一链接条目到最后链接条目的分布模式，将片段分布到链接束中的链接。 分配模式在最后一个链接入口之后重复。

公开(公告)号：US20060121661A1

公开(公告)日：2006-06-08

申请号：US11296084

申请日：2005-12-06

申请人： Jong Yang ,  In Baek ,  Ki Im ,  Chang Ahn ,  Won Cho ,  Seong Lee

发明人： Jong Yang ,  In Baek ,  Ki Im ,  Chang Ahn ,  Won Cho ,  Seong Lee

IPC分类号： H01L21/8234 ,  H01L21/425

CPC分类号： H01L21/28185 ,  B82Y10/00 ,  G11C16/0466 ,  H01L21/265 ,  H01L29/40117 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device using mobile ionic charges and a method of manufacturing the same are provided. The method includes forming a gate dielectric layer on a semiconductor substrate, injecting mobile ionic charges into the gate dielectric layer by leading source plasma to a surface of the gate dielectric layer and implanting ions within the source plasma into the gate dielectric layer using plasma doping, forming on the gate dielectric layer a gate to which a control voltage controlling distribution of the mobile ionic charges within the gate dielectric layer is supplied to control a threshold voltage, and forming a source region and a drain region in the semiconductor substrate near the gate.

摘要翻译： 提供了使用移动离子电荷的非易失性存储器件及其制造方法。 该方法包括在半导体衬底上形成栅极电介质层，通过将源极等离子体引导到栅极电介质层的表面并将源极等离子体内的离子注入到等离子体掺杂的栅极介质层中，将移动的离子电荷注入到栅极电介质层中， 在所述栅极电介质层上形成控制栅极电介质层内的移动离子电荷分布的控制电压以控制阈值电压的栅极，以及在栅极附近的半导体衬底中形成源极区域和漏极区域。

公开(公告)号：US20050222185A1

公开(公告)日：2005-10-06

申请号：US11095686

申请日：2005-04-01

申请人： Chang Ahn ,  Won Choi ,  Young Lee ,  Lak Jeong ,  Sang Lee

发明人： Chang Ahn ,  Won Choi ,  Young Lee ,  Lak Jeong ,  Sang Lee

IPC分类号： A61K31/513 ,  C07D239/46 ,  C07D239/54 ,  C07D239/553

CPC分类号： C07D239/47 ,  A61K31/513 ,  C07D239/54 ,  C07D239/553

摘要： The present invention relates to nucleoside derivatives represented by general formulas I and II, their synthetic methods and their pharmacologically acceptable salts thereof, and compositions containing such compounds. Methods for treating hyperproliferative disorders by administering the compounds are also included.

摘要翻译： 本发明涉及由通式I和II表示的核苷衍生物，其合成方法及其药理学上可接受的盐，以及含有这些化合物的组合物。 还包括通过施用化合物治疗过度增殖性疾病的方法。

公开(公告)号：US20060131648A1

公开(公告)日：2006-06-22

申请号：US11137396

申请日：2005-05-26

申请人： Chang Ahn ,  Wonju Cho ,  Kiju Im ,  Jong Yang ,  In Baek ,  Seong Lee ,  Sung Baek

发明人： Chang Ahn ,  Wonju Cho ,  Kiju Im ,  Jong Yang ,  In Baek ,  Seong Lee ,  Sung Baek

IPC分类号： H01L27/12

CPC分类号： H01L29/66772 ,  H01L29/66636 ,  H01L29/78618

摘要： There are provided an ultra thin film silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) having a recessed source/drain structure, and a method of fabricating the same. The ultra thin film SOI MOS transistor includes a semiconductor substrate; a buried insulating layer disposed on the semiconductor substrate, and formed recessed except for a center portion thereof; an ultra thin film single crystalline silicon layer pattern disposed on the recessed buried insulating layer; a gate stack disposed on the ultra thin film single crystalline silicon layer pattern, and including a gate insulating layer pattern and a gate conductive layer pattern, which are sequentially stacked; a gate spacer layer disposed on sidewalls of the gate stack; and a recessed source/drain region disposed on the recessed buried insulating layer, and formed to overlap a bottom surface portion of the ultra thin film single crystalline silicon layer pattern, which does not overlap the center portion of the recessed buried insulating layer.

摘要翻译： 提供了具有凹陷的源极/漏极结构的超薄膜绝缘体上硅（SOI）金属氧化物半导体场效应晶体管（MOSFET）及其制造方法。 超薄膜SOI MOS晶体管包括半导体衬底; 掩埋绝缘层，设置在所述半导体衬底上，除了其中心部分外形成凹陷; 设置在凹入的掩埋绝缘层上的超薄膜单晶硅层图案; 设置在超薄膜单晶硅层图案上的栅堆叠，并且包括依次层叠的栅极绝缘层图案和栅极导电层图案; 设置在所述栅极堆叠的侧壁上的栅极间隔层; 以及凹陷的源极/漏极区，设置在所述凹入的掩埋绝缘层上，并且形成为与所述超薄膜单晶硅层图案的底表面部分重叠，所述底表面部分不与所述凹入的绝缘层的中心部分重叠。

公开(公告)号：US20050187231A1

公开(公告)日：2005-08-25

申请号：US11059376

申请日：2005-02-17

申请人： Young Lee ,  Chang Ahn

发明人： Young Lee ,  Chang Ahn

IPC分类号： A61K31/517 ,  C07D239/94 ,  C07D401/12 ,  C07D405/12 ,  C07D487/04

CPC分类号： A61K31/517

摘要： Quinazoline derivatives represented by the general formula pharmacologically acceptable salts thereof, and compositions containing such compounds are described. Methods for using the compounds for treatment of hyperproliferative disorders are also described.

摘要翻译： 描述了由通式其药理学上可接受的盐代表的喹唑啉衍生物和含有这些化合物的组合物。 还描述了使用该化合物治疗过度增殖性疾病的方法。