公开(公告)号：US20060073379A1

公开(公告)日：2006-04-06

申请号：US10957649

申请日：2004-10-05

申请人： Sung-Min Kim ,  Hee-Young Lee ,  Yong-Ho Jung ,  Heui-Soo Kim ,  Sung-Chul Park ,  Ha-Young Lee ,  Eun-Sil Kim

发明人： Sung-Min Kim ,  Hee-Young Lee ,  Yong-Ho Jung ,  Heui-Soo Kim ,  Sung-Chul Park ,  Ha-Young Lee ,  Eun-Sil Kim

IPC分类号： H01M10/00

CPC分类号： H01M2/30 ,  H01M2/0277 ,  H01M2/0285 ,  H01M2/08 ,  H01M2/26 ,  H01M10/0431

摘要： An the electric energy storage device includes a cylindrical rolling up electrode body, a cathode lead connecting plate, an anode lead connecting plate, a terminal plate, and a container. The rolling up electrode body includes a cathode and an anode leads formed by cathode and anode collectors. The cathode and anode leads are separately extended from one side of the rolling up electrode body. The terminal plate includes a cathode lead connecting plate, an anode lead connecting plate and an insulation combing member for integrally combining the cathode lead connecting plate with the anode lead connecting plate. The container receives the rolling up electrode body. The electric energy storage device may be advantageously connected to another electric energy storage device in serial or parallel. Additionally, the electric energy storage device has some advantages such as reduced volume, enhanced convenience, improved productivity, etc.

摘要翻译： 电能存储装置包括圆筒形卷起电极体，阴极引线连接板，阳极引线连接板，端子板和容器。 卷起电极体包括由阴极和阳极集电体形成的阴极和阳极引线。 阴极和阳极引线从卷起电极体的一侧分开延伸。 端子板包括阴极引线连接板，阳极引线连接板和用于将阴极引线连接板与阳极引线连接板一体地组合的绝缘精梳部件。 容器容纳卷起电极体。 电能存储装置可以有利地连接到另一个电能存储装置，它们是串联或并联的。 此外，蓄电装置具有体积小，便利性提高，生产效率提高等优点。

公开(公告)号：US07660084B2

公开(公告)日：2010-02-09

申请号：US10540919

申请日：2003-12-13

申请人： Sung-Min Kim ,  Hee-Young Lee ,  Yong-Ho Jung ,  Heui-Soo Kim ,  Sung-Chul Park ,  Ha-Young Lee ,  Eun-Sil Kim

发明人： Sung-Min Kim ,  Hee-Young Lee ,  Yong-Ho Jung ,  Heui-Soo Kim ,  Sung-Chul Park ,  Ha-Young Lee ,  Eun-Sil Kim

IPC分类号： H02H3/20

CPC分类号： H02J7/0029 ,  H02J7/345 ,  H02J2007/004

摘要： Disclosed are an electric energy storage device having a good cycle characteristic and a temperature characteristic and a method of charging and discharging the electric energy storage device. The electric energy storage device including a capacitor and a secondary battery combined in series is provided. When the capacitor of the electric energy storage device is an electric double layer capacitor, the capacitor is used to the voltage of OV or less to increase an available energy usage.

摘要翻译： 公开了具有良好的循环特性和温度特性的蓄电装置以及对蓄电装置进行充放电的方法。 提供包括串联组合的电容器和二次电池的电能存储装置。 当电能存储装置的电容器是双电层电容器时，电容器用于0V或更低的电压以增加可用的能量消耗。

公开(公告)号：US20080013224A1

公开(公告)日：2008-01-17

申请号：US10540919

申请日：2003-12-13

申请人： Sung-Min Kim ,  Hee-Young Lee ,  Yong-Ho Jung ,  Heui-Soo Kim ,  Sung-Chul Park ,  Ha-Young Lee ,  Eun-Sil Kim

发明人： Sung-Min Kim ,  Hee-Young Lee ,  Yong-Ho Jung ,  Heui-Soo Kim ,  Sung-Chul Park ,  Ha-Young Lee ,  Eun-Sil Kim

IPC分类号： H02J7/00 ,  H01G2/14

CPC分类号： H02J7/0029 ,  H02J7/345 ,  H02J2007/004

摘要： Disclosed are an electric energy storage device having a good cycle characteristic and a temperature characteristic and a method of charging and discharging the electric energy storage device. The electric energy storage device including a capacitor and a secondary battery combined in series is provided. When the capacitor of the electric energy storage device is an electric double layer capacitor, the capacitor is used to the voltage of OV or less to increase an available energy usage. When this energy storage device is used as a power in a place where a rapid keeping and repairing is difficult such as out in the fields including in the mountain, at the sea, on the road, the cost for keeping and repairing can be largely reduced.

摘要翻译： 公开了具有良好的循环特性和温度特性的蓄电装置以及对蓄电装置进行充放电的方法。 提供包括串联组合的电容器和二次电池的电能存储装置。 当电能存储装置的电容器是双电层电容器时，电容器用于0V或更低的电压以增加可用的能量消耗。 当这种能量储存装置用于诸如在山地，海上，道路上等领域中难以进行快速保养和修复的地方的动力时，保持和修理的成本可以大大降低 。

公开(公告)号：US07235327B2

公开(公告)日：2007-06-26

申请号：US10873090

申请日：2004-06-22

申请人： Sung-Min Kim ,  Yong-Ho Jung ,  Sung-Chul Park ,  Eun-Sil Kim

发明人： Sung-Min Kim ,  Yong-Ho Jung ,  Sung-Chul Park ,  Eun-Sil Kim

IPC分类号： H01M2/12 ,  F24F7/00

CPC分类号： H01M2/1241

摘要： In a safety vent part and an electric energy storage device having the same, the safety vent part includes a plate coupled to the device, a metal sheet and a metal cap. A hole having a step portion is formed through the plate, and is in communication with an interior of the device. The metal cap having an exhaust nozzle corresponding the hole is coupled into the step portion by a tight fit. The metal sheet is disposed between a bottom surface of the step portion and the metal cap. When an internal pressure of the device is higher than a predetermined breaking pressure, the internal pressure of the device breaks the metal sheet. A gas generated abnormally in the device is exhausted through the hole and exhaust nozzle.

摘要翻译： 在安全排气部分和具有该安全排气部分的电能存储装置中，安全排气部分包括联接到该装置的板，金属板和金属盖。 通过该板形成具有阶梯部的孔，并且与该装置的内部连通。 具有对应于孔的排气喷嘴的金属盖通过紧密配合而联接到台阶部。 金属片设置在台阶部的底面与金属盖之间。 当装置的内部压力高于预定的破坏压力时，装置的内部压力破坏金属板。 在装置中异常生成的气体通过孔和排气喷嘴排出。

公开(公告)号：US20050282064A1

公开(公告)日：2005-12-22

申请号：US10873090

申请日：2004-06-22

申请人： Sung-Min Kim ,  Yong-Ho Jung ,  Sung-Chul Park ,  Eun-Sil Kim

发明人： Sung-Min Kim ,  Yong-Ho Jung ,  Sung-Chul Park ,  Eun-Sil Kim

IPC分类号： F24F7/00 ,  H01M2/12

CPC分类号： H01M2/1241

摘要： In a safety vent part and an electric energy storage device having the same, the safety vent part includes a plate coupled to the device, a metal sheet and a metal cap. A hole having a step portion is formed through the plate, and is in communication with an interior of the device. The metal cap having an exhaust nozzle corresponding the hole is coupled into the step portion by a tight fit. The metal sheet is disposed between a bottom surface of the step portion and the metal cap. When an internal pressure of the device is higher than a predetermined breaking pressure, the internal pressure of the device breaks the metal sheet. A gas generated abnormally in the device is exhausted through the hole and exhaust nozzle.

摘要翻译： 在安全排气部分和具有该安全排气部分的电能存储装置中，安全排气部分包括联接到该装置的板，金属板和金属盖。 通过该板形成具有阶梯部的孔，并且与该装置的内部连通。 具有对应于孔的排气喷嘴的金属盖通过紧密配合而联接到台阶部。 金属片设置在台阶部的底面与金属盖之间。 当装置的内部压力高于预定的破坏压力时，装置的内部压力破坏金属板。 在装置中异常生成的气体通过孔和排气喷嘴排出。

公开(公告)号：US20110183443A1

公开(公告)日：2011-07-28

申请号：US13021842

申请日：2011-02-07

申请人： Byung-Goo Jeon ,  Sung-Chul Park ,  Nikki Edleman ,  Alois Gutmann ,  Fang Cheng

发明人： Byung-Goo Jeon ,  Sung-Chul Park ,  Nikki Edleman ,  Alois Gutmann ,  Fang Cheng

IPC分类号： H01L21/66

CPC分类号： H01L21/76804 ,  H01L21/31116 ,  H01L22/26

摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

摘要翻译： 提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比 以扩大接触孔顶部附近的临时内径。

公开(公告)号：US07788946B2

公开(公告)日：2010-09-07

申请号：US11186722

申请日：2005-07-21

申请人： Sung-Chul Park

发明人： Sung-Chul Park

IPC分类号： F25B39/02

CPC分类号： A47J47/06

摘要： Disclosed is a grain refrigerator provided with a receiving container, a grain storage part installed in the receiving container, for storing a grain, and an evaporator forming a cooling cycle to keep the stored grain at a low temperature, wherein the evaporator is at least one or more and is installed in a grain storage space of the grain storage part to cool the stored grain.

摘要翻译： 公开了一种设置有容纳容器的谷物冰箱，安装在容纳容器中的粮食储存部件，用于储存粮食;以及蒸发器，形成冷却循环，以将储存的颗粒保持在低温，其中蒸发器是至少一个 或更多，并且被安装在谷物储存部分的粮食储存空间中以冷却储存的谷物。

公开(公告)号：US20080093643A1

公开(公告)日：2008-04-24

申请号：US11642924

申请日：2006-12-21

申请人： Sung-Chul Park

发明人： Sung-Chul Park

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/7923 ,  G11C16/0416 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42344 ,  H01L29/513

摘要： Provided is a non-volatile memory device capable of operating with two cells at each one unit. The memory cell unit includes a common source region on an active region, a select gate covering the common source region, a first memory gate on the active region adjacent to one side of the select gate, a second memory gate on the active region adjacent to the other side of the select gate.

摘要翻译： 提供了能够在每一个单元处与两个单元一起操作的非易失性存储器件。 存储单元单元包括有源区上的公共源区，覆盖公共源极区的选择栅极，与选择栅极一侧相邻的有源区上的第一存储栅极，与有源区相邻的有源区上的第二存储栅极 选择门的另一边。

公开(公告)号：US20070102734A1

公开(公告)日：2007-05-10

申请号：US11499515

申请日：2006-08-04

申请人： Ju-Ri Kim ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Chang-Hun Lee ,  Sung-Chul Park

发明人： Ju-Ri Kim ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Chang-Hun Lee ,  Sung-Chul Park

IPC分类号： H01L29/76

CPC分类号： H01L29/7883 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11568 ,  H01L29/1041 ,  H01L29/792

摘要： Disclosed is a semiconductor device and method of fabricating the same. The semiconductor device is applicable to various electronic devices such as transistors or memories with transistors. A MOS transistor of the semiconductor device includes a first region and a second region, different in impurity concentration, which are formed in a channel region between source and drain regions. The first region is higher than the second region in impurity concentration. Impurities of the first region are concentrated on a boundary region between an active region and a field isolation film. The first region prevents a punch-through effect in the channel region, while the second region prevents current from decreasing by an increase of impurity during an operation of the transistor. The first region is formed using an additional ion implantation mask, and the second region is formed using an ion implantation mask or formed along with a well.

摘要翻译： 公开了半导体器件及其制造方法。 半导体器件可应用于各种电子器件，例如具有晶体管的晶体管或存储器。 半导体器件的MOS晶体管包括在源极和漏极区域之间的沟道区域中形成的杂质浓度不同的第一区域和第二区域。 第一区域高于杂质浓度的第二区域。 第一区域的杂质集中在活性区域和场隔离膜之间的边界区域上。 第一区域防止沟道区域中的穿通效应，而第二区域在晶体管的操作期间防止电流由杂质增加而减小。 使用另外的离子注入掩模形成第一区域，并且使用离子注入掩模形成第二区域或与阱一起形成。

公开(公告)号：US07598139B2

公开(公告)日：2009-10-06

申请号：US11896560

申请日：2007-09-04

申请人： Weon-Ho Park ,  Sang-Soo Kim ,  Hyun-Khe Yoo ,  Sung-Chul Park ,  Byoung-Ho Kim ,  Ju-Ri Kim ,  Seung-Beom Yoon ,  Jeong-Uk Han

发明人： Weon-Ho Park ,  Sang-Soo Kim ,  Hyun-Khe Yoo ,  Sung-Chul Park ,  Byoung-Ho Kim ,  Ju-Ri Kim ,  Seung-Beom Yoon ,  Jeong-Uk Han

IPC分类号： H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/76224 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823892 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/11546

摘要： A device is described comprising a substrate of a first conductivity type having a first dopant concentration, a first well formed in the substrate, a second well of the first conductivity type formed in the substrate and being deeper than the first well, the second well having a higher dopant concentration than the first dopant concentration, and a nonvolatile memory cell formed on the second well. A device is described comprising four wells of various conductivity types with a nonvolatile memory cell formed on the second well. A device is described comprising a plurality of wells for isolating transistors of a plurality of voltage ranges, wherein each one of the plurality of wells contains at least one transistor of a particular voltage range, and wherein transistors of only one of the plurality of voltage ranges are within each of the plurality of wells. A method is described of isolating transistors of a first voltage range from transistors of another voltage range, comprising forming a first well to hold transistors only of a first particular voltage range, and forming a second well to hold transistors only of a second particular voltage range.

摘要翻译： 描述了一种器件，其包括具有第一掺杂剂浓度的第一导电类型的衬底，在衬底中形成的第一阱，在衬底中形成并且比第一阱更深的第一导电类型的第二阱，第二阱具有 比第一掺杂剂浓度高的掺杂剂浓度，以及形成在第二阱上的非易失性存储单元。 描述了一种装置，其包括具有形成在第二阱上的非易失性存储单元的各种导电类型的四个阱。 描述了一种器件，其包括用于隔离多个电压范围的晶体管的多个阱，其中多个阱中的每一个阱包含特定电压范围的至少一个晶体管，并且其中仅一个电压范围的晶体管 在多个孔的每一个内。 描述了一种将第一电压范围的晶体管与另一电压范围的晶体管隔离的方法，包括形成第一阱以仅保持第一特定电压范围的晶体管，以及形成第二阱以仅将晶体管保持在第二特定电压范围 。