公开(公告)号：US07655949B2

公开(公告)日：2010-02-02

申请号：US11859203

申请日：2007-09-21

申请人： Sung-hoon Yang ,  So-woon Kim ,  Tae-hyung Hwang ,  Yeon-joo Kim ,  Soo-wan Yoon ,  Chong-chul Chai

发明人： Sung-hoon Yang ,  So-woon Kim ,  Tae-hyung Hwang ,  Yeon-joo Kim ,  Soo-wan Yoon ,  Chong-chul Chai

IPC分类号： H01L27/14

CPC分类号： H01L27/283 ,  H01L27/285 ,  H01L27/3262

摘要： A thin film transistors (TFTs) substrate is structured to maintain as constant across the area of the substrate a kickback voltage due to Miller capacitance between the drain and gate of each TFT even in the presence of manufacturing induced misalignments between the drain electrodes and corresponding gate lines. Each thin film transistor includes a gate electrode, an active layer formed on the gate electrode so as to overlap the gate electrode, first and second source electrodes respectively connected to first and second data lines each of which crosses the gate line while being insulated from the gate line, and an elongated drain electrode located between the first and second source electrodes and disposed over the gate electrode so as to a crossing length of the drain electrode is larger than an underlying width of the gate electrode such that misalignment induced shifts of the position of the gate electrode relative to the drain electrode does not substantially change overlap area between the two.

摘要翻译： 薄膜晶体管（TFT）衬底被构造成即使在漏电极和对应的栅极之间的制造引起的不对准的情况下，由于每个TFT的漏极和栅极之间的米勒电容也会在衬底的面积上保持一定的反冲电压 线条。 每个薄膜晶体管包括栅电极，形成在栅电极上以与栅电极重叠的有源层，分别连接到第一和第二数据线的第一和第二源电极，每个第一和第二数据线与栅极线交叉，同时与 栅极线和位于第一和第二源电极之间并设置在栅电极之上的细长漏极，以使漏电极的交叉长度大于栅电极的下伏宽度，使得未对准引起位置移动 相对于漏电极的栅极电极基本上不改变两者之间的重叠面积。

公开(公告)号：US20080123040A1

公开(公告)日：2008-05-29

申请号：US11985838

申请日：2007-11-16

申请人： Sung-hoon Yang ,  So-woon Kim ,  Chong-chul Chai

发明人： Sung-hoon Yang ,  So-woon Kim ,  Chong-chul Chai

IPC分类号： G02F1/1345 ,  G02F1/13

CPC分类号： G02F1/136209 ,  G02F1/1345 ,  G02F2001/133388

摘要： A liquid crystal display device includes a first substrate where a pixel thin film transistor is formed, a second substrate which is positioned opposite to the first substrate and a liquid crystal layer interposed between the first substrate and the second substrate. A light source is positioned beneath the first substrate, and joins the first substrate with the second substrate, the first substrate comprising: a first insulating substrate which has a display area where the pixel thin film transistor is formed and a non-display area which surrounds the display area; a gate line in the display area and the gate line being electrically connected to the pixel thin film transistor. A gate driving portion is formed in the non-display area to drive the gate line and comprises a driving thin film transistor; and a light blocking member which covers the gate driving part.

摘要翻译： 液晶显示装置包括形成有像素薄膜晶体管的第一基板，与第一基板相对的第二基板和介于第一基板和第二基板之间的液晶层。 光源位于第一衬底下方，并且将第一衬底与第二衬底接合，第一衬底包括：第一绝缘衬底，其具有形成像素薄膜晶体管的显示区域和围绕着像素薄膜晶体管的非显示区域 显示区; 显示区域中的栅极线和栅极线电连接到像素薄膜晶体管。 栅极驱动部分形成在非显示区域中以驱动栅极线并且包括驱动薄膜晶体管; 以及覆盖所述门驱动部的遮光部件。

公开(公告)号：US20070158656A1

公开(公告)日：2007-07-12

申请号：US11639494

申请日：2006-12-14

申请人： Woo-jae Lee ,  Sung-hoon Yang

发明人： Woo-jae Lee ,  Sung-hoon Yang

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/1288 ,  G02F1/133305 ,  G02F1/1362 ,  G02F2001/133388 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603

摘要： An LCD includes a thin film display device having a plastic insulating substrate in which lifting of the edge of the thin film is avoided which includes a display region and a non-display region; a gate line assembly formed on the plastic insulating substrate with the use of a shadow mask disposed over the plastic insulating substrate; a gate insulating layer formed on the gate line assembly in the display region; a data line formed on the gate insulating layer and a data pad formed in the non-display region and spaced away from the gate insulating layer; and a passivation layer formed on the data line.

摘要翻译： LCD包括具有塑料绝缘基板的薄膜显示装置，其中避免了包括显示区域和非显示区域的薄膜边缘的提升; 使用设置在塑料绝缘基板上的荫罩在塑料绝缘基板上形成的栅极线组件; 形成在所述显示区域中的所述栅极线组件上的栅极绝缘层; 形成在所述栅极绝缘层上的数据线和形成在所述非显示区域中并与所述栅极绝缘层间隔开的数据焊盘; 以及形成在数据线上的钝化层。

公开(公告)号：US07598159B2

公开(公告)日：2009-10-06

申请号：US11746328

申请日：2007-05-09

申请人： Hwa-yeul Oh ,  Byoung-june Kim ,  Sung-hoon Yang ,  Jae-ho Choi ,  Yong-mo Choi ,  Girotra Kunal

发明人： Hwa-yeul Oh ,  Byoung-june Kim ,  Sung-hoon Yang ,  Jae-ho Choi ,  Yong-mo Choi ,  Girotra Kunal

IPC分类号： H01L21/00

CPC分类号： H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78696

摘要： A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first hydrogen plasma treatment with respect to the gate insulating layer; forming a first active layer with a first thickness at a first deposition rate on the gate insulating layer; performing a second hydrogen plasma treatment with respect to the first active layer; and forming a second active layer with a second thickness greater than the first thickness at a second deposition rate greater than the first deposition rate, on the first active layer.

摘要翻译： 制造薄膜晶体管基板的方法包括在绝缘基板上形成栅极布线并在栅极布线上形成栅极绝缘层; 对所述栅极绝缘层进行第一氢等离子体处理; 在所述栅绝缘层上以第一沉积速率形成具有第一厚度的第一有源层; 对所述第一活性层进行第二氢等离子体处理; 以及在所述第一活性层上以大于所述第一沉积速率的第二沉积速率形成具有大于所述第一厚度的第二厚度的第二有源层。

公开(公告)号：US20070012919A1

公开(公告)日：2007-01-18

申请号：US11487090

申请日：2006-07-15

申请人： Min-seok Oh ,  Byoung-june Kim ,  Sang-gab Kim ,  Sung-hoon Yang ,  Hong-kee Chin ,  Kunal Girotra

发明人： Min-seok Oh ,  Byoung-june Kim ,  Sang-gab Kim ,  Sung-hoon Yang ,  Hong-kee Chin ,  Kunal Girotra

IPC分类号： H01L29/04

CPC分类号： H01L29/78618 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757

摘要： Provided are a thin film transistor (TFT) substrate and a method for manufacturing the same. The method comprises forming on a substrate a conductive layer, an impurity-doped silicon layer, and an intermediate layer, wherein the intermediate layer comprises intrinsic silicon; patterning the intermediate layer, the impurity-doped silicon layer, and the conductive layer to form a data line, a source electrode, a drain electrode, ohmic contact portions, and intermediate portions, wherein an ohmic contact portion and an intermediate portion are on the source electrode, and an ohmic contact portion and an intermediate portion are on the drain electrode; forming an intrinsic silicon layer on the substrate; and patterning the intrinsic silicon layer to form a semiconductor layer forming channel portion between the source electrode and the drain electrode, and a contact portion on the intermediate portion.

摘要翻译： 提供一种薄膜晶体管（TFT）基板及其制造方法。 该方法包括在衬底上形成导电层，杂质掺杂硅层和中间层，其中中间层包含本征硅; 图案化中间层，杂质掺杂硅层和导电层，以形成数据线，源电极，漏电极，欧姆接触部分和中间部分，其中欧姆接触部分和中间部分在 源电极和欧姆接触部分和中间部分在漏电极上; 在衬底上形成本征硅层; 以及图案化本征硅层以在源电极和漏极之间形成沟道部分的半导体层，以及在中间部分上形成接触部分。

公开(公告)号：US08867003B2

公开(公告)日：2014-10-21

申请号：US11944910

申请日：2007-11-26

申请人： Seung-hoo Yoo ,  Hee-wook Do ,  Mee-hye Jung ,  Sung-hoon Yang ,  Hyun-cheol Moon ,  Hye-ran You

发明人： Seung-hoo Yoo ,  Hee-wook Do ,  Mee-hye Jung ,  Sung-hoon Yang ,  Hyun-cheol Moon ,  Hye-ran You

IPC分类号： G02F1/1343 ,  G02F1/1337 ,  G02F1/139 ,  G02F1/1362

CPC分类号： G02F1/1393 ,  G02F1/133753 ,  G02F1/134309 ,  G02F1/136213 ,  G02F2001/134318

摘要： A liquid crystal display device including a first substrate including a pixel electrode, a second substrate facing the first substrate and including a common electrode, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes a storage capacitive line. The liquid crystal display device further includes a domain forming member that is formed over a first region corresponding to the storage capacitive line and a second region adjacent to the first region. The domain forming member is formed with irregular parts including a first irregular part having an enlarged width, a second irregular part having a reduced width, and an external irregular part, which is closest to the first region of the irregular parts formed in the second region and has an enlarged width.

摘要翻译： 一种液晶显示装置，包括：第一基板，包括像素电极，面对第一基板的第二基板和公共电极;以及插入在第一基板和第二基板之间的液晶层。 第一基板包括存储电容线。 液晶显示装置还包括形成在与存储电容线对应的第一区域上的区域形成部件和与第一区域相邻的第二区域。 所述区域形成部件形成有不规则部分，所述不规则部分包括具有扩大的宽度的第一不规则部分，具有减小的宽度的第二不规则部分和外部不规则部分，其最接近形成在第二区域中的不规则部分的第一区域 并且具有扩大的宽度。

公开(公告)号：US07671364B2

公开(公告)日：2010-03-02

申请号：US11489144

申请日：2006-07-18

申请人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

发明人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

IPC分类号： H01L29/786

CPC分类号： H01L27/12 ,  G02F1/133305 ,  H01L27/1248 ,  H01L29/7842 ,  H01L29/78603

摘要： A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.

摘要翻译： 薄膜晶体管（TFT）基板包括：塑料绝缘基板; 具有第一折射率的第一氮化硅层，形成塑料绝缘基板的一个表面; 以及TFT，其包括在第一氮化硅层上形成的第二折射率小于第一折射率的第二氮化硅层。 因此，本发明提供一种TFT基板，其中减少了由塑料绝缘基板提起薄膜的问题。

公开(公告)号：US20080179598A1

公开(公告)日：2008-07-31

申请号：US12018750

申请日：2008-01-23

申请人： Byoung-june KIM ,  Yong-mo Choi ,  Beohm-rock Choi ,  Sung-hoon Yang ,  Hwa-yeul Oh ,  Jae-ho Choi ,  Jong-moo Huh

发明人： Byoung-june KIM ,  Yong-mo Choi ,  Beohm-rock Choi ,  Sung-hoon Yang ,  Hwa-yeul Oh ,  Jae-ho Choi ,  Jong-moo Huh

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/127

摘要： A display device includes an insulating substrate, a switching TFT formed on the substrate that receives a data voltage and that includes a first semiconductor layer, a driving TFT formed on the substrate that includes a control terminal connected to an output terminal of the switching TFT and a second semiconductor layer including polysilicon and a halogen material, an insulating layer formed on the switching TFT and the driving TFT, a first electrode formed on the insulating layer and electrically connected to an output terminal of the driving TFT, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer.

摘要翻译： 显示装置包括绝缘基板，形成在基板上的开关TFT，其接收数据电压，并且包括第一半导体层，形成在基板上的驱动TFT，该驱动TFT包括连接到开关TFT的输出端子的控制端子，以及 包括多晶硅和卤素材料的第二半导体层，形成在开关TFT和驱动TFT上的绝缘层，形成在绝缘层上并电连接到驱动TFT的输出端的第一电极，形成有机发光层 在第一电极上形成的第二电极和形成在有机发光层上的第二电极。

公开(公告)号：US20070090457A1

公开(公告)日：2007-04-26

申请号：US11489144

申请日：2006-07-18

申请人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

发明人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/12 ,  G02F1/133305 ,  H01L27/1248 ,  H01L29/7842 ,  H01L29/78603

摘要： A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.

摘要翻译： 薄膜晶体管（TFT）基板包括：塑料绝缘基板; 具有第一折射率的第一氮化硅层，形成塑料绝缘基板的一个表面; 以及TFT，其包括在第一氮化硅层上形成的第二折射率小于第一折射率的第二氮化硅层。 因此，本发明提供一种TFT基板，其中减少了由塑料绝缘基板提起薄膜的问题。