公开(公告)号：US5699223A

公开(公告)日：1997-12-16

申请号：US409991

申请日：1995-03-24

申请人： Supika Mashiro ,  Kiyotaka Sakamoto

发明人： Supika Mashiro ,  Kiyotaka Sakamoto

IPC分类号： H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  H01L21/6831 ,  H01L21/6833

摘要： An apparatus for controlling the voltage applied to an electrostatic clamp enables a substrate removing method capable of rapidly, securely and safely removing a substrate regardless of the presence of a dielectric material on the back surface of the substrate to be processed. Before the substrate supported on an electrode by electrostatic clamping is removed, the potential difference between the substrate and the electrode is made zero, and plasma generation is then stopped. The apparatus for controlling the applied voltage has a circuit for detecting the maximum high-frequency voltage (Vpp) for generating a plasma, an operation circuit for computing the self-bias voltage (Vdc) from the maximum high-frequency voltage (Vpp), and an output control circuit for controlling the DC voltage output from a DC power source based on the self-bias voltage (Vdc).

摘要翻译： 用于控制施加到静电夹具的电压的装置能够实现能够快速，可靠和安全地移除基板的基板去除方法，而不管介质材料在待处理基板的背面是否存在。 在通过静电夹持将基板支撑在电极上之前，将基板和电极之间的电位差设为零，然后停止等离子体产生。 用于控制施加电压的装置具有用于检测用于产生等离子体的最大高频电压（Vpp）的电路，用于从最大高频电压（Vpp）计算自偏压（Vdc）的运算电路， 以及输出控制电路，用于基于自偏压（Vdc）控制从直流电源输出的直流电压。

公开(公告)号：US20090078569A1

公开(公告)日：2009-03-26

申请号：US12211023

申请日：2008-09-15

申请人： Hirohisa Hirayanagi ,  Kiyotaka Sakamoto ,  Tomoaki Osada ,  Yoshimitsu Kodaira

发明人： Hirohisa Hirayanagi ,  Kiyotaka Sakamoto ,  Tomoaki Osada ,  Yoshimitsu Kodaira

IPC分类号： C23C14/00

CPC分类号： H01L21/67069 ,  H01J37/15 ,  H01J37/321 ,  H01J37/32357 ,  H01J2237/022 ,  H01J2237/20

摘要： An inductively coupled plasma processing apparatus according to the present invention prevents debris formed through a sputter etching operation from forming a film on an inner face of a side wall part 14 of a dielectric wall container 11 and a high-frequency power from being hindered to be supplied. All of straight lines which start from any one point on the outermost perimeter of an article to be processed 2 and pass through a plasma introduction port 12 form an intersecting point with the bottom part 13 of the dielectric wall container 11 on the inner face of the bottom part 13, in the inductively coupled plasma processing apparatus.

摘要翻译： 根据本发明的电感耦合等离子体处理装置防止通过溅射蚀刻操作形成的碎屑在电介质壁容器11的侧壁部分14的内表面上形成膜，并且阻止高频电力为 提供。 从待处理物品2的最外周上的任何一个点开始并通过等离子体引入口12的所有直线与电介质壁容器11的底部13在内壁上形成交叉点 底部13，在电感耦合等离子体处理装置中。

公开(公告)号：US09844126B2

公开(公告)日：2017-12-12

申请号：US13524170

申请日：2012-06-15

申请人： Masayoshi Ikeda ,  Kiyotaka Sakamoto ,  Akihiro Sawada ,  Yasumi Sago ,  Masami Hasegawa ,  Motozo Kurita

发明人： Masayoshi Ikeda ,  Kiyotaka Sakamoto ,  Akihiro Sawada ,  Yasumi Sago ,  Masami Hasegawa ,  Motozo Kurita

IPC分类号： C23C16/00 ,  H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32669 ,  H05H2001/4667

摘要： Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate.

公开(公告)号：US5858834A

公开(公告)日：1999-01-12

申请号：US807692

申请日：1997-02-28

申请人： Toshiyuki Hirota ,  Kiyotaka Sakamoto ,  Shuji Fujiwara

发明人： Toshiyuki Hirota ,  Kiyotaka Sakamoto ,  Shuji Fujiwara

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852

摘要： In a method for forming a cylindrical capacitor lower plate in a semiconductor device, a first insulating film, a first conducting film and a second insulating film are formed on a principal surface of a semiconductor substrate in the named order. A patterned photoresist film is formed on the second insulating film, and the second insulating film is patterned by an anisotropic etching using the photoresist film as a mask. After the photoresist film is removed, the first conducting film is patterned by an etching using the patterned second insulating film as a mask. Thereafter, a second conducting film is deposited on a whole surface, and then, the second conducting film is anisotropically etched so that a remaining second conducting film is left on a side surface of the patterned first conducting film. The patterned second insulating film is removed, so that the remaining second conducting film is left in the form of a sidewall which is upright from a periphery of the patterned first conducting film.

摘要翻译： 在半导体器件中形成圆柱形电容器底板的方法中，以半导体器件的主要表面形成第一绝缘膜，第一导电膜和第二绝缘膜。 在第二绝缘膜上形成图案化的光致抗蚀剂膜，并且通过使用光致抗蚀剂膜作为掩模的各向异性蚀刻将第二绝缘膜图案化。 在去除光致抗蚀剂膜之后，通过使用图案化的第二绝缘膜作为掩模的蚀刻对第一导电膜进行图案化。 此后，在整个表面上沉积第二导电膜，然后对第二导电膜进行各向异性蚀刻，使剩余的第二导电膜留在图案化的第一导电膜的侧表面上。 去除图案化的第二绝缘膜，使得剩余的第二导电膜以从图案化的第一导电膜的周边垂直的侧壁的形式留下。

公开(公告)号：US5314388A

公开(公告)日：1994-05-24

申请号：US74783

申请日：1993-06-10

申请人： Tadasu Suzuki ,  Kiyotaka Sakamoto

发明人： Tadasu Suzuki ,  Kiyotaka Sakamoto

IPC分类号： F16H7/08

CPC分类号： F16H7/08 ,  F16H7/0848 ,  F16H2007/0806 ,  F16H2007/0812 ,  F16H2007/0859 ,  F16H2007/0891 ,  F16H2007/0893

摘要： In an oil-operated tensioner for applying tension to a power-transmitting chain, a ball check valve is positioned above the oil chamber, either in the tensioner housing, or in the plunger. The ball of the check valve can oscillate when air is present in the oil chamber, since air is compressible. Oscillation of the ball, which occurs when the plunger oscillates during operation of the tensioner, allows the residual air to be discharged from the oil chamber. However, after the air is discharged, oscillation of the plunger is restrained by the incompressibility of the oil, and oscillation of the ball is restrained by the viscosity of the oil which then surrounds the ball. The valve seat of the check valve preferably opens upwardly so that oil splash is accumulated in the valve seat to prevent entry of air through the check valve upon sudden projecting movement of the plunger.

摘要翻译： 在用于向动力传递链施加张力的油压张紧器中，球止回阀位于油室的上方，位于张紧器壳体中或柱塞中。 当空气存在于油室中时，止回阀的球可以振荡，因为空气是可压缩的。 当柱塞在张紧器操作期间振荡时发生的球的振荡允许残余空气从油室排出。 然而，在排出空气之后，柱塞的振动被油的不可压缩性所限制，并且球的振动受到围绕球的油的粘度的限制。 止回阀的阀座优选向上开口，使得油滴飞溅积聚在阀座中，以防止在柱塞突然突出运动时空气通过止回阀。