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公开(公告)号：US20090078569A1
公开(公告)日：2009-03-26
申请号：US12211023
申请日：2008-09-15
IPC分类号： C23C14/00
CPC分类号： H01L21/67069 , H01J37/15 , H01J37/321 , H01J37/32357 , H01J2237/022 , H01J2237/20
摘要： An inductively coupled plasma processing apparatus according to the present invention prevents debris formed through a sputter etching operation from forming a film on an inner face of a side wall part 14 of a dielectric wall container 11 and a high-frequency power from being hindered to be supplied. All of straight lines which start from any one point on the outermost perimeter of an article to be processed 2 and pass through a plasma introduction port 12 form an intersecting point with the bottom part 13 of the dielectric wall container 11 on the inner face of the bottom part 13, in the inductively coupled plasma processing apparatus.
摘要翻译： 根据本发明的电感耦合等离子体处理装置防止通过溅射蚀刻操作形成的碎屑在电介质壁容器11的侧壁部分14的内表面上形成膜，并且阻止高频电力为 提供。 从待处理物品2的最外周上的任何一个点开始并通过等离子体引入口12的所有直线与电介质壁容器11的底部13在内壁上形成交叉点 底部13，在电感耦合等离子体处理装置中。
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2.发明申请DRY ETCHING METHOD, MAGNETO-RESISTIVE ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME 审中-公开干蚀刻方法，磁阻元件及其制造方法和装置公开(公告)号：US20100310902A1
公开(公告)日：2010-12-09
申请号：US12819691
申请日：2010-06-21
CPC分类号： H01L21/67069 , C23F4/00 , G11B5/3163 , G11B5/3906 , H01F41/34 , H01J37/321 , H01J37/3266 , H01J37/3408 , H01J37/3414 , H01J37/3429 , H01J37/3447 , H01L21/32136 , H01L43/12
摘要： In a method of manufacturing a magneto-resistance element having a multi-layer film including magnetic layers, TaOx generated on the surface of the Ta mask is prevented from peeling off when etching is performed on the multi-layer film using an etching gas containing oxygen atoms.When a Ta mask which is used at the time of dry etching performed on the multi-layer film including magnetic layers with an etching gas containing oxygen atoms is formed by sputtering, the Ar gas pressure is set to be 0.1 Pa to 0.4 Pa.
摘要翻译： 在制造具有包含磁性层的多层膜的磁阻元件的方法中，使用含有氧的蚀刻气体对多层膜进行蚀刻时，防止在Ta掩模的表面上产生的TaO x剥离 原子 当通过溅射形成在包含含有氧原子的蚀刻气体的磁性层的多层膜上进行干法蚀刻时使用的Ta掩模，将Ar气体压力设定为0.1Pa〜0.4Pa。
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公开(公告)号：US07981805B2
公开(公告)日：2011-07-19
申请号：US12852230
申请日：2010-08-06
申请人： Yoshimitsu Kodaira , Tomoaki Osada , Sanjay Shinde
发明人： Yoshimitsu Kodaira , Tomoaki Osada , Sanjay Shinde
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O2, O3, N2, H2O, N2O, NO2, CO and CO2 to at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.
摘要翻译： 本发明提供一种能够在不增加基板温度的情况下减少腐蚀发生的电阻变化元件的制造方法。 包含高熔点金属膜和金属氧化物膜的层压膜在等离子体气氛下使用掩模进行蚀刻，所述等离子体气氛使用通过添加至少一种选自Ar， He，Xe，Ne，Kr，O 2，O 3，N 2，H 2 O，N 2 O，NO 2，CO和CO 2与至少一种选自醇和烃或气体化合物的气化化合物。
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公开(公告)号：US20110021000A1
公开(公告)日：2011-01-27
申请号：US12852230
申请日：2010-08-06
申请人： Yoshimitsu Kodaira , Tomoaki Osada , Sanjay Shinde
发明人： Yoshimitsu Kodaira , Tomoaki Osada , Sanjay Shinde
IPC分类号： H01L21/02
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O2, O3, N2, H2O, N2O, NO2, CO and CO2 to at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.
摘要翻译： 本发明提供一种能够在不增加基板温度的情况下减少腐蚀发生的电阻变化元件的制造方法。 包含高熔点金属膜和金属氧化物膜的层压膜在等离子体气氛下使用掩模进行蚀刻，所述等离子体气氛使用通过添加至少一种选自Ar， He，Xe，Ne，Kr，O 2，O 3，N 2，H 2 O，N 2 O，NO 2，CO和CO 2与至少一种选自醇和烃或气体化合物的气化化合物。
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公开(公告)号：US20100044340A1
公开(公告)日：2010-02-25
申请号：US12556987
申请日：2009-09-10
申请人： Yoshimitsu Kodaira , Tomoaki Osada
发明人： Yoshimitsu Kodaira , Tomoaki Osada
IPC分类号： B44C1/22
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3254 , H01F41/308 , H01L43/08 , H01L43/12
摘要： A magnetic device is fabricated by etching a magnetic film in an atmosphere of plasma using a non-organic film as a mask. An atmosphere of plasma is generated by using at least one kind of gasifying compound selected from a gasifying compound group consisting of ethers, aldehydes, carboxylic acids, esters and diones; and by using a non-organic material mask, etching a magnetic film or diamagnetic film which includes at least one kind of metal selected from a metal group consisting of VIII group, IX group and X group elements in a periodic table. As a gas in the atmosphere of plasma, at least one kind of gas selected from a gas group consisting of oxygen, ozone, nitrogen, H2O, N2O, NO2 and CO2 can be added to the gasifying compound. The etching rate and the etching ratio were favorable.
摘要翻译： 通过使用非有机膜作为掩模在等离子体气氛中蚀刻磁性膜来制造磁性器件。 通过使用选自由醚，醛，羧酸，酯和二酮组成的气化组合物中的至少一种气化化合物，产生等离子体气氛; 并且通过使用非有机材料掩模，蚀刻包括选自元素周期表中由VIII族，IX族和X族元素组成的金属中的至少一种金属的磁性膜或抗磁性膜。 作为等离子体气体中的气体，可以向气化化合物中添加选自由氧，臭氧，氮，H 2 O，N 2 O，NO 2和CO 2组成的气体组中的至少一种气体。 蚀刻速率和蚀刻比是有利的。
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公开(公告)号：US20100155231A1
公开(公告)日：2010-06-24
申请号：US11991967
申请日：2006-09-13
IPC分类号： H01L43/12 , C23C14/34 , H01L21/3065
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/308
摘要： Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.
摘要翻译： 公开了用于制造磁阻器件的方法和装置，其适用于通过减少在作为磁阻器件的组件的多层磁性膜的处理期间引起的损坏而制造高品质磁阻器件，从而防止由于这种磁阻特性而导致的磁特性的劣化 损害赔偿 具体公开了一种用于制造磁阻器件的方法，其包括通过在设置有作为磁阻器件的组件的多层磁性膜的衬底上进行反应离子蚀刻来处理多层磁性膜。 这种制造磁阻器件的方法包括在反应离子蚀刻之后用离子束照射多层磁性膜。
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公开(公告)号：US20100304504A1
公开(公告)日：2010-12-02
申请号：US12472799
申请日：2009-05-27
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , C23F4/00 , G11C11/161
摘要： Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers i n the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N2 with using a mask of non-organic material such as Ta. As results, in a studied example, a MTJ taper angle is nearly vertical.
摘要翻译： 提供了用于制造磁性装置的方法和装置。 使用非有机材料如Ta的掩模，通过氢气和惰性气体如N 2的混合气体来蚀刻器件的磁性和/或非磁性层。 结果，在研究的例子中，MTJ锥角近似垂直。
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公开(公告)号：US07060194B2
公开(公告)日：2006-06-13
申请号：US10897127
申请日：2004-07-23
申请人： Yoshimitsu Kodaira , Taichi Hiromi
发明人： Yoshimitsu Kodaira , Taichi Hiromi
IPC分类号： C23F1/44
CPC分类号： B82Y25/00 , B82Y40/00 , C23F4/00 , G11C11/161 , H01F10/3254 , H01F41/308 , H01J2237/3343 , H01L43/12 , Y10T29/49052
摘要： A dry etching method in which a plasma of an etching gas is generated and a magnetic material is dry-etched using a mask material made of a non-organic material, wherein an alcohol having at least one hydroxyl group is used as the etching gas. The alcohol used as the etching gas has one hydroxyl group such as an alcohol selected from the group including methanol (CH3OH), ethanol (C2H5OH) and propanol (C3H7OH).
摘要翻译： 一种干蚀刻方法，其中产生蚀刻气体的等离子体并使用由非有机材料制成的掩模材料进行干蚀刻，其中使用具有至少一个羟基的醇作为蚀刻气体。 用作蚀刻气体的醇具有一个羟基，例如选自甲醇（CH 3 OH），乙醇（C 2 H 5）5 OH）和丙醇（C 3 H 7 OH）。
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公开(公告)号：US10685815B2
公开(公告)日：2020-06-16
申请号：US13392126
申请日：2010-08-25
IPC分类号： H01J37/32
摘要： The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.
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公开(公告)号：US08540852B2
公开(公告)日：2013-09-24
申请号：US11991967
申请日：2006-09-13
IPC分类号： C23F1/10
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/308
摘要： Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.
摘要翻译： 公开了用于制造磁阻器件的方法和装置，其适用于通过减少在作为磁阻器件的组件的多层磁性膜的处理期间引起的损坏而制造高品质磁阻器件，从而防止由于这种磁阻特性而导致的磁特性的劣化 损害赔偿 具体公开了一种用于制造磁阻器件的方法，其包括通过在设置有作为磁阻器件的组件的多层磁性膜的衬底上进行反应离子蚀刻来处理多层磁性膜。 这种制造磁阻器件的方法包括在反应离子蚀刻之后用离子束照射多层磁性膜。
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