摘要:
A method of texturing includes the process of enhancing the hydrophilicity on the surface of a substrate for a recording medium. A texture is then formed on the surface of the substrate with an aqueous slurry in which abrasive grains are dispersed. The surface of the substrate is expected to exhibit an enhanced property of wetness to the aqueous slurry. The aqueous slurry easily spreads over and contacts the surface of the substrate even from the initial stage of the process. The abrasive grains in the aqueous slurry are allowed to uniformly spread over the surface of the substrate. Establishment of the texture can be started on the surface of the substrate at an earlier stage of the process. Even with the abrasive grains of a smaller grain size, a fine and uniform texture of a predetermined surface roughness can be established on the surface of the substrate within a shortened period. Increase in the operating period of abrasion can remarkably be suppressed irrespective of the reduced size of the abrasive grains.
摘要:
An object of the present invention is to enable suppression of a leak current of an organic EL element while improving a conductivity of the organic EL element and suppressing an operation voltage thereof. An organic EL element is used which comprises at least a luminescent layer, a hole transport layer adjacent to a positive-electrode side of the luminescent layer, and an electron injection transport layer adjacent to a negative-electrode side of the luminescent layer, wherein a hole injection layer is provided between the hole transport layer and the positive electrode, and the conductivity of the hole injection layer continuously changes along a thickness direction of the hole injection layer.
摘要:
An object of the present invention is to enable suppression of a leak current of an organic EL element while improving a conductivity of the organic EL element and suppressing an operation voltage thereof. An organic EL element is used which comprises at least a luminescent layer, a hole transport layer adjacent to a positive-electrode side of the luminescent layer, and an electron injection transport layer adjacent to a negative-electrode side of the luminescent layer, wherein a hole injection layer is provided between the hole transport layer and the positive electrode, and the conductivity of the hole injection layer continuously changes along a thickness direction of the hole injection layer.
摘要:
A display device manufacturing method including arraying pixels 20 comprising plural sub-pixels with different light-emitting colors in two intersecting directions on a flexible substrate 12 by patterning plural sub-pixels 14, 16, 18 with different light-emitting colors onto the flexible substrate 12, wherein patterning of the sub-pixels is performed such that from the two directions of pixel array, the plural sub-pixels with different light-emitting colors are arrayed within the pixels in a rows along the direction X with the smaller substrate dimensional change ratio.
摘要:
A method for producing a light-emitting display device, the method including forming a film of a light-transmissive resin material on a substrate over which a reflective metal and a semi-transparent member can be disposed in at least one of a plurality of pixel regions corresponding to red, green and blue; curing part of the film of the light-transmissive resin material to form a light-transmissive resin layer, the part being in a region including the at least one pixel region; and developing the light-transmissive resin layer after the curing to form an optical path length-adjusting layer.
摘要:
A method for producing a display comprising: forming a plurality of pixels arrayed on a flexible substrate and independently driven by TFTs, wherein the TFTs are formed in such a manner that the direction of the channel length L between the source and drain of each TFT is the direction of two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction. When the TFTs include a switching TFT and a driving TFT, the TFTs are formed in such a manner that the direction of the channel length between the source and drain of at least the driving TFT is the direction of the two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction.
摘要:
An organic electroluminescent display device comprising: a substrate; a reflective layer provided on the substrate and reflecting light; an insulating layer provided on the reflective layer and transmitting light; a lower electrode provided on the insulating layer; an organic electroluminescent layer provided on the lower electrode; and an upper electrode provided on the organic electroluminescent layer and electrically connected to the reflective layer.
摘要:
A display by an active matrix drive in which a plurality of pixels are independently controlled, wherein each pixel includes at least two sub-pixels that emit light having the same color as each other by application of current to the sub-pixels, and at least one of the sub-pixels is provided with an optical filter at a light extraction side of the sub-pixel. A display which is capable of multi-gradation reproduction is provided.
摘要:
A method for imputing a voice message recording for a particular floor served by an elevator car includes the steps of sensing elevator car positions (21), sensing that a selected car operating panel button has been held down (22) and enabling a voice input process (23).A device for displaying Braille information to an elevator user includes an elongated panel (42) having a central Braille character panel (31) and two buttons (32, 33) disposed at opposite ends of the elongated panel for causing the displayed information to move backward and forward. A plurality of actuators (38), and probes (35) extruding through the Braille panel form Braille characters.
摘要:
A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.