公开(公告)号：US06538293B2

公开(公告)日：2003-03-25

申请号：US10142062

申请日：2002-05-10

申请人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

发明人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

IPC分类号： H01L31119

CPC分类号： H01L27/0629 ,  Y10S438/981

摘要： A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.

公开(公告)号：US06423588B1

公开(公告)日：2002-07-23

申请号：US09698165

申请日：2000-10-30

申请人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

发明人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

IPC分类号： H01L218238

CPC分类号： H01L27/0629 ,  Y10S438/981

摘要： A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the may reliably operate even at a low power-supply voltage.

摘要翻译： 通过利用比构成CMOS栅极阵列的逻辑部分的MISFET更厚的栅极氧化膜9B形成具有小的漏电流的电容元件C1，而不增加制造CMOS门阵列的步骤数。 电容元件C1具有栅电极10E。 栅电极10E的一部分由多晶硅膜制成。 多晶硅膜掺杂有n型杂质，即使在低电源电压下也可以可靠地运行。

公开(公告)号：US06433398B1

公开(公告)日：2002-08-13

申请号：US09661372

申请日：2000-09-13

申请人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

发明人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

IPC分类号： H01L2972

CPC分类号： H01L27/0629 ,  Y10S438/981

摘要： A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.

摘要翻译： 通过利用比构成CMOS栅极阵列的逻辑部分的MISFET更厚的栅极氧化膜9B形成具有小的漏电流的电容元件C1，而不增加制造CMOS门阵列的步骤数。 电容元件C1是栅电极10E。 栅电极10E的一部分由多晶硅膜制成。 多晶硅膜掺杂有n型杂质，使得即使在低电源电压下，电容元件也可以可靠地工作。

公开(公告)号：US06864549B2

公开(公告)日：2005-03-08

申请号：US10648302

申请日：2003-08-27

申请人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

发明人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/06 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/0629 ,  Y10S438/981

摘要： A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power supply voltage.

摘要翻译： 通过利用比构成CMOS栅极阵列的逻辑部分的MISFET更厚的栅极氧化膜9B形成具有小的漏电流的电容元件C1，而不增加制造CMOS门阵列的步骤数。 电容元件C1具有栅电极10E。 栅电极10E的一部分由多晶硅膜制成。 多晶硅膜掺杂有n型杂质，使得即使在低电源电压下，电容元件也可以可靠地工作。

公开(公告)号：US06661062B2

公开(公告)日：2003-12-09

申请号：US10358276

申请日：2003-02-05

申请人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

发明人： Kazuhisa Suzuki ,  Toshiro Takahashi ,  Yasunobu Yanagisawa ,  Yusuke Nonaka

IPC分类号： H01L31119

CPC分类号： H01L27/0629 ,  Y10S438/981

摘要： A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power supply voltage.

公开(公告)号：US07030030B2

公开(公告)日：2006-04-18

申请号：US10688902

申请日：2003-10-21

申请人： Kazuhisa Suzuki ,  Kazuo Koide ,  Toshiro Takahashi

发明人： Kazuhisa Suzuki ,  Kazuo Koide ,  Toshiro Takahashi

IPC分类号： H01L21/302

CPC分类号： H01L23/5223 ,  H01L21/31637 ,  H01L23/5286 ,  H01L24/06 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/11807 ,  H01L28/40 ,  H01L2224/05554 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method is provided for manufacturing an integrated circuit device having a plurality of wiring layers including a first wiring layer which is not the upper most layer among the plurality of wiring layers and a second wiring layer higher than the first wiring layer in the plurality of wiring layers. An interlayer dielectric film is provided to cover the first wiring layer. Holes are then formed in the interlayer dielectric film and a mask film is formed to cover some of the holes. Etching using the mask film is then carried out and an insulating film formed on the interlayer dielectric film is removed, including the bottoms and/or insides of the holes. The mask film is then removed and a conductive member is formed inside the holes.

摘要翻译： 提供一种用于制造具有多个布线层的集成电路器件的方法，所述布线层包括多个布线层中不是最上层的第一布线层和比多个布线中的第一布线层高的第二布线层 层。 提供层间绝缘膜以覆盖第一布线层。 然后在层间电介质膜中形成孔，并且形成掩模膜以覆盖一些孔。 然后进行使用掩模膜的蚀刻，除去形成在层间电介质膜上的绝缘膜，包括孔的底部和/或内部。 然后去除掩模膜，并且在孔内形成导电构件。

公开(公告)号：US08128447B2

公开(公告)日：2012-03-06

申请号：US12054113

申请日：2008-03-24

申请人： Toshiro Takahashi

发明人： Toshiro Takahashi

IPC分类号： H01J9/00

CPC分类号： H01L51/0011 ,  H01L27/3211 ,  H01L27/3281 ,  H01L51/56 ,  H01L2251/5338

摘要： A display device manufacturing method including arraying pixels 20 comprising plural sub-pixels with different light-emitting colors in two intersecting directions on a flexible substrate 12 by patterning plural sub-pixels 14, 16, 18 with different light-emitting colors onto the flexible substrate 12, wherein patterning of the sub-pixels is performed such that from the two directions of pixel array, the plural sub-pixels with different light-emitting colors are arrayed within the pixels in a rows along the direction X with the smaller substrate dimensional change ratio.

摘要翻译： 一种显示装置的制造方法，其特征在于，在柔性基板12上，通过将具有不同的发光颜色的多个子像素14,16,18构图到柔性基板上，在柔性基板12上的两个交叉方向上具有包含具有不同的发光颜色的多个子像素的排列像素20 如图12所示，其中进行子像素的图案化，使得从像素阵列的两个方向，具有不同发光颜色的多个子像素沿着方向X排列成像素中，具有较小的衬底尺寸变化 比。

公开(公告)号：US20110317429A1

公开(公告)日：2011-12-29

申请号：US13254504

申请日：2010-02-04

申请人： Satoshi Aiba ,  Toshiro Takahashi

发明人： Satoshi Aiba ,  Toshiro Takahashi

IPC分类号： F21V7/00 ,  B05D5/12 ,  C08F2/50 ,  H01J9/24

CPC分类号： H01L51/5265

摘要： A method for producing a light-emitting display device, the method including forming a film of a light-transmissive resin material on a substrate over which a reflective metal and a semi-transparent member can be disposed in at least one of a plurality of pixel regions corresponding to red, green and blue; curing part of the film of the light-transmissive resin material to form a light-transmissive resin layer, the part being in a region including the at least one pixel region; and developing the light-transmissive resin layer after the curing to form an optical path length-adjusting layer.

摘要翻译： 一种发光显示装置的制造方法，其特征在于，在基板上形成有透光性树脂材料的膜，在所述基板上形成反射金属和半透明构件的多个像素中的至少一个 对应于红色，绿色和蓝色的区域; 固化透光树脂材料的膜的一部分以形成透光树脂层，该部分在包括至少一个像素区域的区域中; 在固化后显影透光性树脂层，形成光路长度调整层。

公开(公告)号：US07978275B2

公开(公告)日：2011-07-12

申请号：US12054146

申请日：2008-03-24

申请人： Toshiro Takahashi ,  Masaya Nakayama ,  Atsushi Tanaka

发明人： Toshiro Takahashi ,  Masaya Nakayama ,  Atsushi Tanaka

IPC分类号： G02F1/1368

CPC分类号： H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L29/0657 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L2251/5338

摘要： A method for producing a display comprising: forming a plurality of pixels arrayed on a flexible substrate and independently driven by TFTs, wherein the TFTs are formed in such a manner that the direction of the channel length L between the source and drain of each TFT is the direction of two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction. When the TFTs include a switching TFT and a driving TFT, the TFTs are formed in such a manner that the direction of the channel length between the source and drain of at least the driving TFT is the direction of the two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction.

摘要翻译： 一种用于制造显示器的方法，包括：形成排列在柔性基板上并由TFT独立驱动的多个像素，其中TFT以这样的方式形成：每个TFT的源极和漏极之间的沟道长度L的方向为 衬底上的两个正交方向的方向，其中衬底具有比其他方向更小的尺寸变化率。 当TFT包括开关TFT和驱动TFT时，TFT以这样的方式形成，使得至少驱动TFT的源极和漏极之间的沟道长度的方向是基板上的两个正交方向的方向 基板的尺寸变化比其他方向小。

公开(公告)号：US07750557B2

公开(公告)日：2010-07-06

申请号：US11389011

申请日：2006-03-27

申请人： Toshiro Takahashi

发明人： Toshiro Takahashi

IPC分类号： H01J1/62

CPC分类号： H01L51/5234 ,  H01L27/3244 ,  H01L51/5271 ,  H01L2251/5315

摘要： An organic electroluminescent display device comprising: a substrate; a reflective layer provided on the substrate and reflecting light; an insulating layer provided on the reflective layer and transmitting light; a lower electrode provided on the insulating layer; an organic electroluminescent layer provided on the lower electrode; and an upper electrode provided on the organic electroluminescent layer and electrically connected to the reflective layer.

摘要翻译： 一种有机电致发光显示装置，包括：基板; 设置在基板上并反射光的反射层; 设置在反射层上并透射光的绝缘层; 设置在所述绝缘层上的下电极; 设置在下电极上的有机电致发光层; 以及设置在有机电致发光层上并电连接到反射层的上电极。