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公开(公告)号：US12124163B2
公开(公告)日：2024-10-22
申请号：US18359954
申请日：2023-07-27
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US11860530B2
公开(公告)日：2024-01-02
申请号：US17809979
申请日：2022-06-30
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US20230367197A1
公开(公告)日：2023-11-16
申请号：US18359954
申请日：2023-07-27
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US11094057B2
公开(公告)日：2021-08-17
申请号：US16984090
申请日：2020-08-03
发明人： Peng-Ren Chen , Shiang-Bau Wang , Wen-Hao Cheng , Yung-Jung Chang , Wei-Chung Hu , Yi-An Huang , Jyun-Hong Chen
摘要： A method includes capturing a raw image from a semiconductor wafer, using graphic data system (GDS) information corresponding to the wafer to assign a measurement box in the raw image, performing a distance measurement on a feature of the raw image in the measurement box, and performing a manufacturing activity based on the distance measurement.
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公开(公告)号：US10762621B2
公开(公告)日：2020-09-01
申请号：US16400833
申请日：2019-05-01
发明人： Peng-Ren Chen , Shiang-Bau Wang , Wen-Hao Cheng , Yung-Jung Chang , Wei-Chung Hu , Yi-An Huang , Jyun-Hong Chen
摘要： A method includes capturing a raw image from a semiconductor wafer, assigning a measurement box in the raw image, arranging a pair of indicators in the measurement box according to graphic data system (GDS) information of the semiconductor wafer, measuring a distance between the indicators, and performing a manufacturing activity based on the measured distance.
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公开(公告)号：US10304178B2
公开(公告)日：2019-05-28
申请号：US14858049
申请日：2015-09-18
发明人： Peng-Ren Chen , Shiang-Bau Wang , Wen-Hao Cheng , Yung-Jung Chang , Wei-Chung Hu , Yi-An Huang , Jyun-Hong Chen
摘要： Methods and systems for diagnosing semiconductor wafer are provided. A target image is obtained according to graphic data system (GDS) information of a specific layout in the semiconductor wafer, wherein the target image includes a first contour having a first pattern corresponding to the specific layout. Image-based alignment is performed to capture a raw image from the semiconductor wafer according to the first contour. The semiconductor wafer is analyzed by measuring the raw image, so as to provide a diagnostic result.
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公开(公告)号：US20220350235A1
公开(公告)日：2022-11-03
申请号：US17809979
申请日：2022-06-30
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US20220066312A1
公开(公告)日：2022-03-03
申请号：US17007920
申请日：2020-08-31
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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