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    SEMICONDUCTOR ARRANGEMENT FACILITATING ENHANCED THERMO-CONDUCTION
    2.
    发明申请
    SEMICONDUCTOR ARRANGEMENT FACILITATING ENHANCED THERMO-CONDUCTION 有权
    半导体装置促进增强型热导率

    公开(公告)号：US20150129971A1

    公开(公告)日：2015-05-14

    申请号：US14079744

    申请日：2013-11-14

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Ming-Hsiang Song ,  Jam-Wem Lee ,  Yi-Feng Chang ,  Wun-Jie Hung Lin

    IPC分类号： H01L27/088 ,  H01L29/66

    CPC分类号： H01L27/0251 ,  H01L21/26513 ,  H01L21/823437 ,  H01L21/823493 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0928 ,  H01L29/66477

    摘要： A semiconductor arrangement includes a well region and a first region disposed within the well region. The first region includes a first conductivity type. The semiconductor arrangement includes a first gate disposed above the well region on a first side of the first region. The first gate includes a first top surface facing away from the well region. The first top surface has a first top surface area. The semiconductor arrangement includes a first gate contact disposed above the first gate. The first gate contact includes a first bottom surface facing towards the well region. The first bottom surface has a first bottom surface area. The first bottom surface area covers at least about two thirds of the first top surface area.

    摘要翻译： 半导体装置包括阱区和设置在阱区内的第一区。 第一区域包括第一导电类型。 半导体装置包括设置在第一区域的第一侧上的阱区上方的第一栅极。 第一门包括面向远离井区的第一顶面。 第一顶表面具有第一顶表面区域。 半导体装置包括设置在第一栅极上方的第一栅极触点。 第一门接触包括面向井区域的第一底面。 第一底表面具有第一底表面区域。 第一底表面区域覆盖第一顶表面区域的至少约三分之二。