公开(公告)号：US20160260702A1

公开(公告)日：2016-09-08

申请号：US15159068

申请日：2016-05-19

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Bo-Ting Chen ,  Han-Jen Yang ,  Li-Wei Chu ,  Wun-Jie Lin

IPC分类号： H01L27/02 ,  H01L27/092 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L27/0285 ,  B82Y10/00 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L21/823885 ,  H01L27/0248 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78696

摘要： A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

公开(公告)号：US09349719B2

公开(公告)日：2016-05-24

申请号：US14483227

申请日：2014-09-11

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Bo-Ting Chen ,  Li-Wei Chu ,  Wun-Jie Lin ,  Han-Jen Yang

IPC分类号： H01L29/66 ,  H01L27/02 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45

CPC分类号： H01L27/0285 ,  B82Y10/00 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L21/823885 ,  H01L27/0248 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78696

摘要： A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

摘要翻译： 提供半导体器件。 半导体器件包括在浅沟槽隔离（STI）区域的第一侧上的第一晶体管和在STI区域的第二侧上的第二晶体管。 第一晶体管包括形成在具有第一导电类型的阱内的第二导电类型的第一导电部分，连接到第一导电部分的第一纳米线和第一有源区以及包围第一纳米线的第一栅极。 第二晶体管包括在阱内形成具有第二导电类型的第二导电部分，连接到第二导电部分的第二纳米线和第二有源区域以及围绕第二纳米线的第二栅极。 来自ESD事件的过多电流通过阱穿过第一导电部分而绕过第一纳米线和第二纳米线的第二导电部分。

公开(公告)号：US09583481B2

公开(公告)日：2017-02-28

申请号：US14501162

申请日：2014-09-30

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Li-Wei Chu ,  Bo-Ting Chen ,  Wun-Jie Lin ,  Han-Jen Yang

IPC分类号： H01L27/06 ,  H01L27/02 ,  H01L29/423 ,  H01L29/786 ,  H01L23/50 ,  H01L27/088 ,  H01L29/06

CPC分类号： H01L27/0629 ,  H01L21/823487 ,  H01L23/50 ,  H01L27/0248 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/78642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided. The semiconductor device includes a first conductive portion on a first side of a first shallow trench isolation (STI) region. The first conductive portion is formed within a first well having a first conductivity type. The first conductive portion has the first conductivity type. The first conductive portion is connected to an electro static discharge (ESD) circuit. A second conductive portion is on a second side of the first STI region. The second conductive portion is formed within a second well having a second conductivity type. The second conductive portion having the first conductivity type is connected to a first nanowire and an input output I/O port.

摘要翻译： 提供半导体器件。 半导体器件包括在第一浅沟槽隔离（STI）区域的第一侧上的第一导电部分。 第一导电部分形成在具有第一导电类型的第一阱内。 第一导电部分具有第一导电类型。 第一导电部分连接到静电放电（ESD）电路。 第二导电部分在第一STI区域的第二侧上。 第二导电部分形成在具有第二导电类型的第二阱内。 具有第一导电类型的第二导电部分连接到第一纳米线和输入输出I / O端口。

公开(公告)号：US20160093608A1

公开(公告)日：2016-03-31

申请号：US14501162

申请日：2014-09-30

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Li-Wei Chu ,  Bo-Ting Chen ,  Wun-Jie Lin ,  Han-Jen Yang

IPC分类号： H01L27/06 ,  H01L29/423 ,  H01L23/60 ,  H01L27/088 ,  H01L23/50 ,  H01L29/786 ,  H01L29/06

CPC分类号： H01L27/0629 ,  H01L21/823487 ,  H01L23/50 ,  H01L27/0248 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/78642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided. The semiconductor device includes a first conductive portion on a first side of a first shallow trench isolation (STI) region. The first conductive portion is formed within a first well having a first conductivity type. The first conductive portion has the first conductivity type. The first conductive portion is connected to an electro static discharge (ESD) circuit. A second conductive portion is on a second side of the first STI region. The second conductive portion is formed within a second well having a second conductivity type. The second conductive portion having the first conductivity type is connected to a first nanowire and an input output I/O port.

摘要翻译： 提供半导体器件。 半导体器件包括在第一浅沟槽隔离（STI）区域的第一侧上的第一导电部分。 第一导电部分形成在具有第一导电类型的第一阱内。 第一导电部分具有第一导电类型。 第一导电部分连接到静电放电（ESD）电路。 第二导电部分在第一STI区域的第二侧上。 第二导电部分形成在具有第二导电类型的第二阱内。 具有第一导电类型的第二导电部分连接到第一纳米线和输入输出I / O端口。

公开(公告)号：US11749673B2

公开(公告)日：2023-09-05

申请号：US17739357

申请日：2022-05-09

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Shu-Yu Su ,  Jam-Wem Lee ,  Wun-Jie Lin

IPC分类号： H01L27/02 ,  H02H9/04

CPC分类号： H01L27/0285 ,  H01L27/0266 ,  H02H9/046

摘要： Systems and methods for protecting a device from an electrostatic discharge (ESD) event are provided. A resistor-capacitor (RC) trigger circuit and a driver circuit are provided. The RC trigger circuit is configured to provide an ESD protection signal to the driver circuit. A discharge circuit includes a first metal oxide semiconductor (MOS) transistor and a second MOS transistor connected in series between a first voltage potential and a second voltage potential. The driver circuit provides one or more signals for turning the first and second MOS transistors on and off.

公开(公告)号：US11355491B2

公开(公告)日：2022-06-07

申请号：US16993399

申请日：2020-08-14

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Shu-Yu Su ,  Jam-Wem Lee ,  Wun-Jie Lin

IPC分类号： H01L27/02 ,  H02H9/04

摘要： Systems and methods for protecting a device from an electrostatic discharge (ESD) event are provided. A resistor-capacitor (RC) trigger circuit and a driver circuit are provided. The RC trigger circuit is configured to provide an ESD protection signal to the driver circuit. A discharge circuit includes a first metal oxide semiconductor (MOS) transistor and a second MOS transistor connected in series between a first voltage potential and a second voltage potential. The driver circuit provides one or more signals for turning the first and second MOS transistors on and off.

公开(公告)号：US09978739B2

公开(公告)日：2018-05-22

申请号：US15603516

申请日：2017-05-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Ming-Hsiang Song ,  Jam-Wem Lee ,  Yi-Feng Chang ,  Wun-Jie Lin

IPC分类号： H01L27/02 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/265

CPC分类号： H01L27/0251 ,  H01L21/26513 ,  H01L21/823437 ,  H01L21/823493 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0928 ,  H01L29/66477

摘要： A semiconductor arrangement includes a well region and a first region disposed within the well region. The first region includes a first conductivity type. The semiconductor arrangement includes a first gate disposed above the well region on a first side of the first region. The first gate includes a first top surface facing away from the well region. The first top surface has a first top surface area. The semiconductor arrangement includes a first gate contact disposed above the first gate. The first gate contact includes a first bottom surface facing towards the well region. The first bottom surface has a first bottom surface area. The first bottom surface area covers at least about two thirds of the first top surface area.

公开(公告)号：US09666575B2

公开(公告)日：2017-05-30

申请号：US14983641

申请日：2015-12-30

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Ming-Hsiang Song ,  Jam-Wem Lee ,  Yi-Feng Chang ,  Wun-Jie Lin

IPC分类号： H01L27/02 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L27/0251 ,  H01L21/26513 ,  H01L21/823437 ,  H01L21/823493 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823892 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0928 ,  H01L29/66477

摘要： A semiconductor arrangement includes a well region and a first region disposed within the well region. The first region includes a first conductivity type. The semiconductor arrangement includes a first gate disposed above the well region on a first side of the first region. The first gate includes a first top surface facing away from the well region. The first top surface has a first top surface area. The semiconductor arrangement includes a first gate contact disposed above the first gate. The first gate contact includes a first bottom surface facing towards the well region. The first bottom surface has a first bottom surface area. The first bottom surface area covers at least about two thirds of the first top surface area.

公开(公告)号：US09559095B2

公开(公告)日：2017-01-31

申请号：US15159068

申请日：2016-05-19

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Bo-Ting Chen ,  Han-Jen Yang ,  Li-Wei Chu ,  Wun-Jie Lin

IPC分类号： H01L29/66 ,  H01L27/02 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L27/0285 ,  B82Y10/00 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L21/823885 ,  H01L27/0248 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78696

摘要： A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

摘要翻译： 提供半导体器件。 半导体器件包括在浅沟槽隔离（STI）区域的第一侧上的第一晶体管和在STI区域的第二侧上的第二晶体管。 第一晶体管包括形成在具有第一导电类型的阱内的第二导电类型的第一导电部分，连接到第一导电部分的第一纳米线和第一有源区以及包围第一纳米线的第一栅极。 第二晶体管包括在阱内形成具有第二导电类型的第二导电部分，连接到第二导电部分的第二纳米线和第二有源区域以及围绕第二纳米线的第二栅极。 来自ESD事件的过多电流通过阱穿过第一导电部分而绕过第一纳米线和第二纳米线的第二导电部分。

公开(公告)号：US09496256B2

公开(公告)日：2016-11-15

申请号：US14334719

申请日：2014-07-18

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chin-Chi Wang ,  Wu-Ping Huang ,  Wun-Jie Lin

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L21/8234 ,  H01L21/28

CPC分类号： H01L27/088 ,  H01L21/28114 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823487 ,  H01L29/41741 ,  H01L29/4175 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/66666 ,  H01L29/78 ,  H01L29/7827

摘要： A semiconductor device includes a first transistor and a second transistor. Each of the first and second transistors includes a channel. The channel of the first transistor extends in a substantially vertical direction. The channel of the second transistor extends in a substantially horizontal direction. A method for fabricating the semiconductor device is also disclosed.

摘要翻译： 半导体器件包括第一晶体管和第二晶体管。 第一和第二晶体管中的每一个包括沟道。 第一晶体管的沟道在基本垂直的方向上延伸。 第二晶体管的沟道在大致水平的方向上延伸。 还公开了制造半导体器件的方法。