公开(公告)号：US10269618B2

公开(公告)日：2019-04-23

申请号：US15823157

申请日：2017-11-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Ru Lee ,  Chii-Horng Li ,  Chien-I Kuo ,  Li-Li Su ,  Chien-Chang Su ,  Heng-Wen Ting ,  Jung-Chi Tai ,  Che-Hui Lee ,  Ying-Wei Li

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/24 ,  H01L29/66 ,  H01L29/78 ,  H01L21/764 ,  H01L29/161 ,  H01L29/165

摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

公开(公告)号：US20170076973A1

公开(公告)日：2017-03-16

申请号：US15002077

申请日：2016-01-20

申请人： Taiwan Semiconductor Manufacturing Company., Ltd.

发明人： Yen-Ru Lee ,  Chii-Horng Li ,  Chien-I Kuo ,  Lilly Su ,  Chien-Chang Su ,  Heng-Wen Ting ,  Jung-Chi Tai ,  Che-Hui Lee ,  Ying-Wei Li

IPC分类号： H01L21/764 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L29/24

CPC分类号： H01L21/764 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

摘要翻译： 一个实施例是一种结构，其包括衬底上的第一鳍片，衬底上的第二鳍片，与第一鳍片相邻的第二鳍片，围绕第一鳍片和第二鳍片的隔离区域，沿着侧壁和上表面的栅极结构 所述第一鳍片和所述第二鳍片的栅极结构限定所述第一鳍片和所述第二鳍片中的沟道区域，所述第一鳍片上的源极/漏极区域和邻近所述栅极结构的所述第二鳍片，以及将所述源极/ 漏极区域。

公开(公告)号：US11532470B2

公开(公告)日：2022-12-20

申请号：US16430179

申请日：2019-06-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pradip Girdhar Chaudhari ,  Che-Hui Lee ,  Wen-Cheng Yang

IPC分类号： G01B7/004 ,  G01D5/14 ,  H01J37/34 ,  G01B7/00

摘要： A method includes providing a jig including a predetermined center and a magnetron installed on the jig; rotating the magnetron and obtaining a measured first magnetic flux density at the predetermined center of the jig; defining a first area of the magnetron based on the measured first magnetic flux density; rotating the magnetron and measuring a plurality of second magnetic flux densities within the first area of the magnetron; deriving a measured second magnetic flux density among the plurality of second magnetic flux densities; comparing the measured second magnetic flux density with a predetermined threshold; and performing an operation based on the comparison.

公开(公告)号：US11460290B2

公开(公告)日：2022-10-04

申请号：US16996828

申请日：2020-08-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pradip Girdhar Chaudhari ,  Che-Hui Lee

IPC分类号： G01B7/30 ,  G01B7/14 ,  C23C14/35

摘要： A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.

公开(公告)号：US11004724B2

公开(公告)日：2021-05-11

申请号：US16390413

申请日：2019-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Ru Lee ,  Chii-Horng Li ,  Chien-I Kuo ,  Li-Li Su ,  Chien-Chang Su ,  Heng-Wen Ting ,  Jung-Chi Tai ,  Che-Hui Lee ,  Ying-Wei Li

IPC分类号： H01L29/66 ,  H01L21/764 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/24 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

公开(公告)号：US20180082883A1

公开(公告)日：2018-03-22

申请号：US15823157

申请日：2017-11-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Ru Lee ,  Chii-Horng Li ,  Chien-I Kuo ,  Li-Li Su ,  Chien-Chang Su ,  Heng-Wen Ting ,  Jung-Chi Tai ,  Che-Hui Lee ,  Ying-Wei Li

IPC分类号： H01L21/764 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/24 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

CPC分类号： H01L21/764 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

公开(公告)号：US09831116B2

公开(公告)日：2017-11-28

申请号：US15002077

申请日：2016-01-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Ru Lee ,  Chii-Horng Li ,  Chien-I Kuo ,  Li-Li Su ,  Chien-Chang Su ,  Heng-Wen Ting ,  Jung-Chi Tai ,  Che-Hui Lee ,  Ying-Wei Li

IPC分类号： H01L21/764 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L29/24

CPC分类号： H01L21/764 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.

公开(公告)号：US11754691B2

公开(公告)日：2023-09-12

申请号：US16906939

申请日：2020-06-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pradip Girdhar Chaudhari ,  Che-Hui Lee ,  Chih-Cheng Wei ,  Wen-Cheng Yang ,  Chyi-Tsong Ni

IPC分类号： G01C3/08 ,  G01S7/497 ,  G01S7/481 ,  G01S17/06

CPC分类号： G01S7/4972 ,  G01S7/4812 ,  G01S17/06

摘要： A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.

公开(公告)号：US11747131B2

公开(公告)日：2023-09-05

申请号：US17818086

申请日：2022-08-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pradip Girdhar Chaudhari ,  Che-Hui Lee

IPC分类号： G01B7/30 ,  G01B7/14 ,  G01L1/12 ,  G01L5/00 ,  C23C14/35

CPC分类号： G01B7/30 ,  G01B7/14 ,  G01L1/12 ,  G01L5/0066 ,  G01L5/0076 ,  C23C14/35

摘要： A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.

公开(公告)号：US20190252240A1

公开(公告)日：2019-08-15

申请号：US16390413

申请日：2019-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Ru Lee ,  Chii-Horng Li ,  Chien-I Kuo ,  Li-Li Su ,  Chien-Chang Su ,  Heng-Wen Ting ,  Jung-Chi Tai ,  Che-Hui Lee ,  Ying-Wei Li

IPC分类号： H01L21/764 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L29/06 ,  H01L29/24 ,  H01L29/16 ,  H01L29/08 ,  H01L29/161

CPC分类号： H01L21/764 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851 ,  H01L29/7853

摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.