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公开(公告)号：US12015001B2
公开(公告)日：2024-06-18
申请号：US17695815
申请日：2022-03-15
发明人： Wen-Chuan Tai , Fan Hu , Hsiang-Fu Chen , Li-Chun Peng
CPC分类号： H01L24/08 , H01L21/50 , H01L23/10 , H01L24/09 , H01L24/80 , H01L2224/0801 , H01L2224/08053 , H01L2224/08059 , H01L2224/08221 , H01L2224/0903 , H01L2224/09055 , H01L2224/80203 , H01L2224/80805 , H01L2224/8083 , H01L2224/80895 , H01L2924/1611 , H01L2924/1616 , H01L2924/16235 , H01L2924/1631 , H01L2924/16315 , H01L2924/1632
摘要： A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.
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公开(公告)号：US20230373780A1
公开(公告)日：2023-11-23
申请号：US18366151
申请日：2023-08-07
发明人： Fan Hu , Chun-Ren Cheng , Hsiang-Fu Chen , Wen-Chuan Tai
CPC分类号： B81B3/0013 , B81C1/00968 , B81B2203/04 , B81B2207/012 , B81B2203/0109 , B81B2207/03 , B81B2207/07
摘要： Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure
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公开(公告)号：US10266396B2
公开(公告)日：2019-04-23
申请号：US15605329
申请日：2017-05-25
发明人： Ching-Kai Shen , Wen-Chuan Tai , Chia-Ming Hung , Hsiang-Fu Chen , Jung-Huei Peng , Chun-Wen Cheng
摘要： The present disclosure provides a semiconductor device, which includes a first substrate comprising an upper surface and a second substrate disposed over the first substrate. The semiconductor device also includes a first electrode disposed in the second substrate and configured to move in a direction substantially parallel to the upper surface in response to a pressure difference, and a second electrode disposed in the second substrate. The second electrode is configured to provide a capacitance in conjunction with the first electrode.
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公开(公告)号：US09422151B1
公开(公告)日：2016-08-23
申请号：US14858414
申请日：2015-09-18
发明人： Wen-Chuan Tai , Alexander Kalnitsky , Hsin-Ting Huang , Hsiang-Fu Chen , Jiou-Kang Lee , Ching-Kai Shen
CPC分类号： B81B3/0013 , B81B2203/0127
摘要： A semiconductor device includes a substrate and a movable membrane proximal to the substrate. The semiconductor device further includes a mesa over the substrate and protruded from a surface of the substrate toward the movable membrane. The mesa includes a strike hitting portion configured to receive a striking force from the membrane and a hybrid stress buffer under the strike hitting portion, wherein the hybrid stress buffer includes at least two layers which are distinguishable by a difference in hardness.
摘要翻译： 半导体器件包括基板和靠近基板的可动膜。 半导体器件还包括在衬底上的台面并从衬底的表面向可移动膜突出。 台面包括构造成接收来自膜的打击力的击打部分和在击打部分下方的混合应力缓冲器，其中混合应力缓冲器包括可由硬度差异区分的至少两层。
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公开(公告)号：US11834325B2
公开(公告)日：2023-12-05
申请号：US17840892
申请日：2022-06-15
发明人： Fan Hu , Chun-Ren Cheng , Hsiang-Fu Chen , Wen-Chuan Tai
CPC分类号： B81B3/0013 , B81C1/00968 , B81B2203/0109 , B81B2203/04 , B81B2207/012 , B81B2207/03 , B81B2207/07
摘要： Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.
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公开(公告)号：US20230382723A1
公开(公告)日：2023-11-30
申请号：US18231904
申请日：2023-08-09
发明人： Kang-Yi Lien , I-Hsuan Chiu , Yi-Chieh Huang , Chia-Ming Hung , Kuan-Chi Tsai , Hsiang-Fu Chen
CPC分类号： B81C1/00333 , B81B7/0077
摘要： A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.
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公开(公告)号：US11220422B2
公开(公告)日：2022-01-11
申请号：US16353484
申请日：2019-03-14
发明人： Fan Hu , Wen-Chuan Tai , Hsiang-Fu Chen , Chun-Ren Cheng
IPC分类号： B81B3/00 , G01C19/5656
摘要： A micro-electro-mechanical system (MEMS) device includes a substrate, a proof mass, and a piezoelectric bump. The substrate has a surface. The proof mass is suspended over the surface of the substrate, wherein the proof mass is movable with respect to the substrate. The piezoelectric bump is disposed on the surface of the substrate and extends a distance from the surface of the substrate toward the proof mass.
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公开(公告)号：US20230399226A1
公开(公告)日：2023-12-14
申请号：US17835175
申请日：2022-06-08
发明人： Fan Hu , Wen-Chuan Tai , Li-Chun Peng , Hsiang-Fu Chen , Ching-Kai Shen , Hung-Wei Liang , Jung-Kuo Tu
CPC分类号： B81B7/008 , B81C3/001 , B81C2201/013 , B81B2203/033 , B81B2207/015
摘要： The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.
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公开(公告)号：US20230382724A1
公开(公告)日：2023-11-30
申请号：US17825225
申请日：2022-05-26
发明人： Wen-Chuan Tai , Hsiang-Fu Chen , Chia-Ming Hung , I-Hsuan Chiu , Fan Hu
CPC分类号： B81C1/00801 , B81B3/0051 , B81B2203/0127 , B81C2201/053
摘要： Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.
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公开(公告)号：US09630832B2
公开(公告)日：2017-04-25
申请号：US14134060
申请日：2013-12-19
发明人： Chin-Min Lin , Hsiang-Fu Chen , Wen-Chuan Tai , Hsin-Ting Huang , Chia-Ming Hung
CPC分类号： B81B7/007 , B81B2207/015 , B81B2207/095
摘要： A semiconductor device includes a device substrate and a conductive capping substrate. The device substrate includes at least one micro-electro mechanical system (MEMS) device. The conductive capping substrate is bonded to the device substrate and includes a cap portion covering the MEMS device, and a conductor portion in electrical contact with the device substrate.
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