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公开(公告)号：US10266390B2
公开(公告)日：2019-04-23
申请号：US14925345
申请日：2015-10-28
发明人： Shang-Ying Tsai , Hsin-Ting Huang , Lung Yuan Pan , Jung-Huei Peng , Hung-Hua Lin , Yao-Te Huang
摘要： A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
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公开(公告)号：US09584003B2
公开(公告)日：2017-02-28
申请号：US14993142
申请日：2016-01-12
发明人： Tien-Kan Chung , Wen-Chuan Tai , Yao-Te Huang , Hsin-Ting Huang , Shang-Ying Tsai , Chang-Yi Yang , Chia-Ming Hung
CPC分类号： H02K35/04 , B81B7/02 , G01P15/11 , H01F5/003 , H02K15/00 , H02M7/04 , H02N1/006 , Y10T29/49009
摘要： A semiconductor device includes a moveable element over a substrate, wherein the moveable element is moveable relative to the substrate. The semiconductor device further includes a first anchor portion connected to the substrate; and a second anchor portion connected to the substrate on an opposite side of the moveable element from the first anchor portion. The semiconductor device further includes a first connector configured to connect the moveable element to the first anchor portion. The semiconductor device further includes a second connector configured to connect the moveable element to the second anchor portion. The semiconductor device further includes a conductive wire loop on the moveable element; and a connection wire electrically connected to a first end of the conductive wire loop, wherein the connection wire extends across the first connector to the first anchor portion.
摘要翻译： 半导体器件包括在衬底上的可移动元件，其中可移动元件可相对于衬底移动。 半导体器件还包括连接到衬底的第一锚定部分; 以及第二锚固部分，其在与所述第一锚固部分相对的所述可移动元件的相对侧上连接到所述基板。 半导体器件还包括被配置为将可移动元件连接到第一锚定部分的第一连接器。 半导体器件还包括被配置为将可移动元件连接到第二锚定部分的第二连接器。 半导体器件还包括在可移动元件上的导线回路; 以及连接线，其电连接到所述导线回路的第一端，其中所述连接线穿过所述第一连接器延伸到所述第一锚固部分。
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公开(公告)号：US09034677B2
公开(公告)日：2015-05-19
申请号：US14057909
申请日：2013-10-18
发明人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
CPC分类号： B81C1/00777 , B81B2207/07 , B81C1/00896 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03001 , H01L2224/03009 , H01L2224/04042 , H01L2224/05571 , H01L2224/48091 , H01L2224/48463 , H01L2224/83805 , H01L2224/85375 , H01L2924/00014 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/1461 , H01L2924/16235 , H01L2924/00 , H01L2224/45099 , H01L2224/05552
摘要： The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.
摘要翻译： 本公开提供了一种方法，包括提供第一基板; 以及在所述第一基板的第一表面上形成微机电系统（MEMS）装置。 在第一基板的第一表面上的至少一个结合部位上形成接合焊盘。 接合部位从第一表面凹陷。 因此，接合焊盘的顶表面可以位于衬底的顶表面的平面之下。 还描述了具有凹入的连接元件（例如，接合焊盘）的器件。 在另外的实施例中，在衬底切割期间，在凹入的连接元件上形成保护层。
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公开(公告)号：US09533876B2
公开(公告)日：2017-01-03
申请号：US14731823
申请日：2015-06-05
发明人： Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号： B81B7/0058 , B81B3/0005 , B81B3/0021 , B81C1/00269 , B81C1/00793 , B81C2201/053 , B81C2203/0109 , H01G5/16 , H01L28/60
摘要： A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer.
摘要翻译： 一种方法包括形成MEMS器件，形成与MEMS器件相邻的接合层，以及在接合层上形成保护层。 形成接合层和保护层的步骤包括接合层和保护层的原位沉积。
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公开(公告)号：US20150266722A1
公开(公告)日：2015-09-24
申请号：US14731823
申请日：2015-06-05
发明人： Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号： B81B7/0058 , B81B3/0005 , B81B3/0021 , B81C1/00269 , B81C1/00793 , B81C2201/053 , B81C2203/0109 , H01G5/16 , H01L28/60
摘要： A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer
摘要翻译： 一种方法包括形成MEMS器件，形成与MEMS器件相邻的接合层，以及在接合层上形成保护层。 形成接合层和保护层的步骤包括接合层和保护层的原位沉积
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公开(公告)号：US09112001B2
公开(公告)日：2015-08-18
申请号：US14173406
申请日：2014-02-05
发明人： Chia-Pao Shu , Chun-wen Cheng , Kuei-Sung Chang , Hsin-Ting Huang , Shang-Ying Tsai , Jung-Huei Peng
IPC分类号： H01L21/30 , H01L21/768 , B81C1/00 , H01L23/00 , H01L25/065
CPC分类号： H01L21/76838 , B81C1/00238 , B81C1/00269 , B81C2203/019 , H01L23/49838 , H01L23/528 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L2224/0345 , H01L2224/03452 , H01L2224/0361 , H01L2224/0362 , H01L2224/04026 , H01L2224/05551 , H01L2224/05555 , H01L2224/05557 , H01L2224/05617 , H01L2224/05638 , H01L2224/061 , H01L2224/08145 , H01L2224/08225 , H01L2224/26145 , H01L2224/29011 , H01L2224/29014 , H01L2224/29017 , H01L2224/2902 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29117 , H01L2224/29124 , H01L2224/29138 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/29181 , H01L2224/301 , H01L2224/32058 , H01L2224/321 , H01L2224/32106 , H01L2224/32148 , H01L2224/83203 , H01L2224/83365 , H01L2224/83805 , H01L2225/06527 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/01014 , H01L2924/01037 , H01L2924/01032 , H01L2924/00 , H01L2924/0132 , H01L2924/00014
摘要： A method of forming a package system includes providing a first substrate having a metallic pad and at least one metallic guard ring. The method further includes bonding the metallic pad of the first substrate with a semiconductor pad of a second substrate, wherein the at least one metallic guard ring is configured to at least partially interact with the semiconductor pad to form at least a first portion of an electrical bonding material between the first and second substrates.
摘要翻译： 形成封装系统的方法包括提供具有金属焊盘和至少一个金属保护环的第一基板。 该方法还包括用第二衬底的半导体焊盘接合第一衬底的金属焊盘，其中至少一个金属保护环被配置为至少部分地与半导体焊盘相互作用以形成至少第一部分的电 在第一和第二基板之间接合材料。
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公开(公告)号：US11130670B2
公开(公告)日：2021-09-28
申请号：US16390149
申请日：2019-04-22
发明人： Shang-Ying Tsai , Hung-Hua Lin , Hsin-Ting Huang , Lung Yuan Pan , Jung-Huei Peng , Yao-Te Huang
摘要： A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
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公开(公告)号：US09181083B2
公开(公告)日：2015-11-10
申请号：US14484540
申请日：2014-09-12
发明人： Shang-Ying Tsai , Hung-Hua Lin , Lung Yuan Pan , Yao-Te Huang , Hsin-Ting Huang , Jung-Huei Peng
CPC分类号： B81B7/0006 , B81B2203/0307 , B81C1/00039 , B81C1/00134 , B81C1/00166 , B81C1/00341 , G01P15/0802 , G01P15/125 , G01P2015/0871 , H01G5/18 , H01L28/60
摘要： A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
摘要翻译： 器件包括衬底，衬底上的布线导线，路由导线上的电介质层以及介电层上的蚀刻停止层。 微机电系统（MEMS）器件具有超过蚀刻停止层的部分。 接触插塞穿过蚀刻停止层和电介质层。 接触插头将MEMS器件的部分连接到布线导线。 保护环设置在蚀刻停止层上方和MEMS器件下方，其中护送环环绕接触插塞。
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公开(公告)号：US20140248730A1
公开(公告)日：2014-09-04
申请号：US14057909
申请日：2013-10-18
发明人： Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
IPC分类号： B81C1/00
CPC分类号： B81C1/00777 , B81B2207/07 , B81C1/00896 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03001 , H01L2224/03009 , H01L2224/04042 , H01L2224/05571 , H01L2224/48091 , H01L2224/48463 , H01L2224/83805 , H01L2224/85375 , H01L2924/00014 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/1461 , H01L2924/16235 , H01L2924/00 , H01L2224/45099 , H01L2224/05552
摘要： The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.
摘要翻译： 本公开提供了一种方法，包括提供第一基板; 以及在所述第一基板的第一表面上形成微机电系统（MEMS）装置。 在第一基板的第一表面上的至少一个结合部位上形成接合焊盘。 接合部位从第一表面凹陷。 因此，接合焊盘的顶表面可以位于衬底顶表面的平面之下。 还描述了具有凹入的连接元件（例如，接合焊盘）的器件。 在另外的实施例中，在衬底切割期间，在凹入的连接元件上形成保护层。
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公开(公告)号：US09630832B2
公开(公告)日：2017-04-25
申请号：US14134060
申请日：2013-12-19
发明人： Chin-Min Lin , Hsiang-Fu Chen , Wen-Chuan Tai , Hsin-Ting Huang , Chia-Ming Hung
CPC分类号： B81B7/007 , B81B2207/015 , B81B2207/095
摘要： A semiconductor device includes a device substrate and a conductive capping substrate. The device substrate includes at least one micro-electro mechanical system (MEMS) device. The conductive capping substrate is bonded to the device substrate and includes a cap portion covering the MEMS device, and a conductor portion in electrical contact with the device substrate.
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