SEMICONDUCTOR STRUCTURE
    2.
    发明申请

    公开(公告)号:US20190067222A1

    公开(公告)日:2019-02-28

    申请号:US16173450

    申请日:2018-10-29

    IPC分类号: H01L23/66

    摘要: A method of manufacturing a semiconductor structure includes providing a transceiver, forming a molding to surround the transceiver, forming a plurality of recesses extending through the molding, disposing a conductive material into the plurality of recesses to form a plurality of vias, disposing and patterning an insulating layer over the molding, the plurality of vias and the transceiver, and forming a redistribution layer (RDL) over the insulating layer, wherein the RDL comprises an antenna disposed over the insulating layer and a dielectric layer covering the antenna, and a portion of the antenna is extended through the insulating layer and is electrically connected with the transceiver.