-
公开(公告)号：US20150180451A1
公开(公告)日：2015-06-25
申请号：US14572246
申请日：2014-12-16
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Hidetaro NAKAZAWA , Kentaro NAKAMURA , Shogo INOUE , Jun TSUTSUMI , Takashi MATSUDA
IPC: H03H9/64
CPC classification number: H03H9/6489 , H03H3/08 , H03H9/02881 , H03H9/02889 , H03H9/02944 , H03H9/02952 , H03H9/14541
Abstract: A surface acoustic wave device includes: a pair of comb-type electrodes that are provided on a piezoelectric substrate and include electrode fingers and dummy electrode fingers, the electrode fingers of one of the pair of comb-type electrodes facing the dummy electrode fingers of the other comb-type electrode; and additional films that are provided to cover gaps between tip ends of the electrode fingers and tip ends of the dummy electrode fingers and to overlap with at least one of first through third groups in which the first and second groups respectively include the electrode fingers and the dummy electrode fingers located at opposite sides of the gaps in a first direction in which the electrode fingers extend, and the third group includes the electrode fingers located at sides of the gaps in a second direction that crosses the first direction.
Abstract translation: 表面声波装置包括：一对梳状电极，设置在压电基板上，包括电极指和虚拟电极指，所述一对梳型电极中的一个的电极指与所述虚拟电极指的面对 其他梳型电极; 以及附加膜，其被设置为覆盖电极指的末端和虚拟电极指的末端之间的间隙，并且与第一和第三组中的至少一个重叠，其中第一和第二组分别包括电极指和 位于电极指的第一方向的间隙的相对侧的虚设电极指，第三组包括位于沿与第一方向相反的第二方向的间隙侧的电极指。
-
公开(公告)号：US20140091980A1
公开(公告)日：2014-04-03
申请号：US13938883
申请日：2013-07-10
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Fumitaka IIZUKA , Kentaro NAKAMURA
IPC: H03H7/38
Abstract: An impedance matching circuit is connected to a first circuit block (impedance matching target circuit) that requires impedance matching and that has one terminal connected to a signal line and the other terminal connected to a ground, the impedance matching circuit having a second circuit block that has a first circuit and a second circuit connected in parallel. In the first circuit, a first capacitor having a variable capacitance and a first inductor having a first inductance are connected in series, and in the second circuit, a second inductor having a second inductance and a switch are connected are connected in series. The impedance matching circuit has one terminal connected to the signal line of the first circuit block and the other terminal connected to the ground of the first circuit block.
Abstract translation: 阻抗匹配电路连接到需要阻抗匹配的第一电路块（阻抗匹配目标电路），并且具有连接到信号线的一个端子和连接到地的另一个端子，阻抗匹配电路具有第二电路块， 具有并联连接的第一电路和第二电路。 在第一电路中，具有可变电容的第一电容器和具有第一电感的第一电感器串联连接，并且在第二电路中连接具有第二电感和开关的第二电感器串联连接。 阻抗匹配电路具有一个端子连接到第一电路块的信号线，而另一个端子连接到第一电路块的地。
-
公开(公告)号：US20160182010A1
公开(公告)日：2016-06-23
申请号：US14824878
申请日：2015-08-12
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Jun TSUTSUMI , Yoshio SATO , Tabito TANAKA , Takashi MATSUDA
CPC classification number: H03H9/14547 , H03H9/059 , H03H9/1452 , H03H9/14561 , H03H9/14564 , H03H9/1457 , H03H9/14594 , H03H9/64 , H03H9/6483
Abstract: An acoustic wave device includes: a piezoelectric substrate; and an IDT formed on the piezoelectric substrate, wherein an anisotropy coefficient is positive, an overlap region where electrode fingers of the IDT overlap each other includes a center region and an edge region, the electrode fingers in the center and edge regions are continuously formed, the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and an angle between the width direction in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction in the edge region and the crystal axis orientation.
Abstract translation: 声波装置包括：压电基板; 以及形成在所述压电基板上的IDT，各向异性系数为正，所述IDT的电极指重叠的重叠区域包括中心区域和边缘区域，所述中心区域和边缘区域中的电极指连续形成， 边缘区域中的电极指在中心区域相对于电极指倾斜，使得边缘区域中的电极指的宽度方向上的间距大于电极指的宽度方向上的间距， 并且中心区域中的宽度方向与压电基板的晶轴取向之间的角度小于边缘区域中的宽度方向与晶轴取向之间的角度。
-
公开(公告)号：US20150280689A1
公开(公告)日：2015-10-01
申请号：US14667316
申请日：2015-03-24
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Hidetaro NAKAZAWA , Jun TSUTSUMI
CPC classification number: H03H9/02818 , H03H3/10 , H03H9/02834 , H03H9/02881 , H03H9/02992 , H03H9/14541 , H03H9/6489
Abstract: A surface acoustic wave device includes: comb electrodes that are provided on a piezoelectric substrate, respectively has a plurality of electrode fingers, a plurality of dummy electrode fingers and a bus bar, edges of the electrode fingers of one of the comb electrodes facing the dummy electrode fingers of the other; and an added film that is provided at least under the bus bar of the comb electrodes and under the electrode fingers and the dummy electrode fingers in a first region and is not provided in a crossing region where the electrode fingers of the one of the comb electrodes and the electrode fingers of the other cross each other, the first region being a region between front edges of the dummy electrodes and edges of the dummy electrodes connected to the bus bar and extending in an alignment direction of the electrode fingers.
Abstract translation: 声表面波装置包括：设置在压电基板上的梳电极分别具有多个电极指，多个虚设电极指和母线，一个梳电极的电极指的边缘面对虚拟 另一方的电极指; 以及附加膜，其至少设置在梳状电极的母线下方，并且在电极指和虚设电极指的第一区域内设置，并且不设置在所述梳状电极中的一个的电极指的交叉区域 并且所述另一方的电极指彼此交叉，所述第一区域是所述虚拟电极的前边缘和连接到汇流条并且沿电极指的排列方向延伸的虚拟电极的边缘之间的区域。
-
公开(公告)号：US20150155851A1
公开(公告)日：2015-06-04
申请号：US14555125
申请日：2014-11-26
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Jun TSUTSUMI , Masafumi IWAKI , Kentaro NAKAMURA
IPC: H03H9/25 , H01L41/047
CPC classification number: H01L41/047 , H03H9/02559 , H03H9/02669
Abstract: An acoustic wave element includes: a piezoelectric substrate; an IDT (Interdigital Transducer) formed on the piezoelectric substrate; and an end face of the piezoelectric substrate that is formed on at least one end of the IDT in a propagation direction of an acoustic wave; wherein when a wavelength of the acoustic wave which the IDT excites is expressed by “λ” and a metallization ratio of the IDT is expressed by “D”, a distance between an inner end of an electrode finger of the IDT nearest to the end face and the end face is equal to or more than 7λ/16+D×λ/4 and equal to or less than 3λ/4+Dλ/4.
Abstract translation: 声波元件包括：压电基板; 形成在压电基板上的IDT（叉指式换能器） 以及在声波的传播方向上形成在IDT的至少一端上的压电基板的端面; 其中当IDT激发的声波的波长用“λ”表示并且IDT的金属化比率由“D”表示时，距离端面最近的IDT的电极指的内端之间的距离 并且端面等于或大于7λ/ 16 + D×λ/ 4且等于或小于3λ/ 4 +Dλ/ 4。
-
Patent Agency Ranking
公开(公告)号：US20140009032A1
公开(公告)日：2014-01-09
申请号：US13911994
申请日：2013-06-06
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Tomoyuki TAKAHASHI , Taisei IRIEDA , Kentaro NAKAMURA
IPC: H01L41/053 , H01L41/29
CPC classification number: H01L41/053 , H01L41/29 , H03H9/02228 , H03H9/02559 , H03H9/059 , Y10T29/42
Abstract: A Lamb wave device according to an embodiment of the present invention includes a piezoelectric function member and a supporting member. The piezoelectric function member has a piezoelectric substrate, IDT electrodes, and a cutout portion. The IDT electrodes are disposed on the upper surface of the piezoelectric substrate. The cutout portion is formed in the piezoelectric substrate, and includes a step face provided between the upper surface and the lower surface of the piezoelectric substrate. The supporting member has a supporting surface and a cavity. The supporting surface is bonded to the lower surface of the piezoelectric substrate, and is exposed in the cutout portion toward the upper surface of the piezoelectric substrate. The cavity is formed adjacent to the supporting surface, and faces the IDT electrodes through the piezoelectric substrate.
Abstract translation: 根据本发明的实施例的兰姆波装置包括压电功能部件和支撑部件。 压电功能部件具有压电基板，IDT电极和切口部。 IDT电极设置在压电基板的上表面上。 切口部形成在压电基板中，并且包括设置在压电基板的上表面和下表面之间的台阶面。 支撑构件具有支撑表面和腔。 支撑面接合到压电基板的下表面，并且在切口部分中朝向压电基板的上表面露出。 空腔与支撑表面相邻地形成，并且通过压电基板面向IDT电极。
-
公开(公告)号：US20180316333A1
公开(公告)日：2018-11-01
申请号：US15958756
申请日：2018-04-20
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Fumiya MATSUKURA , Satoshi IMASU , Takashi MATSUDA
Abstract: An acoustic wave resonator includes: an IDT located on a piezoelectric substrate, including comb-shaped electrodes facing each other and including electrode fingers and a bus bar connecting the electrode fingers; a first silicon oxide film located on the electrode fingers in an overlap region where the electrode fingers overlap and having a film thickness in a part of edge regions, which correspond to both ends of the overlap region, equal to or less than that in a center region sandwiched between the edge regions; and a second silicon oxide film located on the electrode fingers, containing an element slowing an acoustic velocity in a silicon oxide film when being added to the silicon oxide film, having a concentration of the element greater than that in the first silicon oxide film, and having a film thickness in a part of the edge regions greater than that in the center region.
-
公开(公告)号：US20170370791A1
公开(公告)日：2017-12-28
申请号：US15615012
申请日：2017-06-06
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Fumiya MATSUKURA , Naoki TAKAHASHI , Takashi MATSUDA , Tsutomu MIYASHITA
Abstract: An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.
-
公开(公告)号：US20170201232A1
公开(公告)日：2017-07-13
申请号：US15331598
申请日：2016-10-21
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Fumiya MATSUKURA , Takashi MATSUDA , Tsutomu MIYASHITA , Jun TSUTSUMI
Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.
-
10.发明申请公开(公告)号：US20170279433A1
公开(公告)日：2017-09-28
申请号：US15451667
申请日：2017-03-07
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Fumiya MATSUKURA , Kentaro NAKAMURA , Takashi MATSUDA , Jun TSUTSUMI , Junichi HAMASAKI
CPC classification number: H03H9/14541 , H03H3/04 , H03H9/02559 , H03H9/605 , H03H9/64 , H03H2003/0414
Abstract: An acoustic wave resonator includes: a piezoelectric substrate; an IDT located on the piezoelectric substrate and including comb-shaped electrodes facing each other, each of the comb-shaped electrodes including: electrode fingers exciting an acoustic wave; and a bus bar to which the electrode fingers are connected; a dielectric film located on the piezoelectric substrate in an overlap region, where the electrode fingers of one of the comb-shaped electrodes and the electrode fingers of the other overlap, so as to cover the electrode fingers; and an additional film located on the dielectric film in the overlap region and having a density greater than that of the dielectric film, and of which a film thickness in edge regions corresponding to both edges of the overlap region in an extension direction of the electrode fingers is greater than a film thickness in a central region sandwiched between the edge regions in the overlap region.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.016 seconds)
