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公开(公告)号：US20190222195A1
公开(公告)日：2019-07-18
申请号：US16175235
申请日：2018-10-30
发明人： Takashi MATSUDA , Masafumi IWAKI
摘要： An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes comb-shaped electrodes facing each other, each of the comb-shaped electrodes having grating electrode and a bus bar connected to the grating electrodes, a duty ratio of grating electrodes of the comb-shaped electrodes in a center region of an overlap region differing from a duty ratio of grating electrodes of the comb-shaped electrodes in an edge region of the overlap region in an arrangement direction of the grating electrodes, the grating electrodes of each of the comb-shaped electrodes overlapping with the grating electrodes of the other in the overlap region, a grating electrode of a first one of the comb-shaped electrodes in the center region having a different width from a grating electrode of a second one of the comb-shaped electrodes in the center region.
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公开(公告)号：US20160211829A1
公开(公告)日：2016-07-21
申请号：US14970153
申请日：2015-12-15
发明人： Masafumi IWAKI , Yoshio SATO , Tabito TANAKA , Hidetaro NAKAZAWA , Takashi MATSUDA , Jun TSUTSUMI
CPC分类号： H03H9/725 , H03H9/02559 , H03H9/02669 , H03H9/131 , H03H9/14541 , H03H9/1457 , H03H9/64
摘要： An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ρi, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ρ0, a Poisson's ratio of Cu is represented by P0 and a pitch is represented by λ, a total value of “(hi/λ)×(ρi/ρ0)×(Pi/P0)” for each metal film with respect to the one or more metal films is more than 0.08.
摘要翻译： 声波装置包括：切割角度为20°以上且48°以下的Y切X传播型钽酸锂基板; 以及由层叠在所述基板上的一个以上的金属膜构成的光栅电极，并且激发声波，其中当所述一个或多个金属膜中的每个金属膜的密度由i表示时，泊松比 每个金属膜由Pi表示，每个金属膜的膜厚由hi表示，Cu的密度表示为＆rgr; 0，Cu的泊松比由P0表示，间距由λ表示，总计 每个金属膜相对于一个或多个金属膜的“（hi /λ）×（＆rgr; i /＆rgr; 0）×（Pi / P0）”的值大于0.08。
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公开(公告)号：US20160172573A1
公开(公告)日：2016-06-16
申请号：US14879808
申请日：2015-10-09
发明人： Masafumi IWAKI , Takashi MATSUDA
IPC分类号： H03H9/54
CPC分类号： H03H9/02228 , H03H9/02677 , H03H9/564 , H03H9/64
摘要： A laterally coupled multi-mode monolithic filter includes: a substrate; a piezoelectric film formed on the substrate; a ground electrode formed on a first surface of the piezoelectric film; and signal electrodes formed on a second surface of the piezoelectric film and arranged in parallel to each other, the second surface being opposite to the first surface, each of the signal electrodes including a first electrode finger and a second electrode finger, wherein the first electrode finger and the second electrode finger have different electric potentials; adjacent signal electrodes of the signal electrodes are at a distance from each other, the distance being greater than a pitch of the first electrode finger and the second electrode finger.
摘要翻译： 横向耦合多模单片滤波器包括：基板; 形成在基板上的压电膜; 形成在压电膜的第一表面上的接地电极; 以及形成在压电膜的第二表面上且彼此平行布置的信号电极，第二表面与第一表面相对，每个信号电极包括第一电极指和第二电极指，其中第一电极 手指和第二电极指具有不同的电位; 信号电极的相邻信号电极彼此间隔一定距离，该距离大于第一电极指和第二电极指的间距。
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公开(公告)号：US20150180451A1
公开(公告)日：2015-06-25
申请号：US14572246
申请日：2014-12-16
IPC分类号： H03H9/64
CPC分类号： H03H9/6489 , H03H3/08 , H03H9/02881 , H03H9/02889 , H03H9/02944 , H03H9/02952 , H03H9/14541
摘要： A surface acoustic wave device includes: a pair of comb-type electrodes that are provided on a piezoelectric substrate and include electrode fingers and dummy electrode fingers, the electrode fingers of one of the pair of comb-type electrodes facing the dummy electrode fingers of the other comb-type electrode; and additional films that are provided to cover gaps between tip ends of the electrode fingers and tip ends of the dummy electrode fingers and to overlap with at least one of first through third groups in which the first and second groups respectively include the electrode fingers and the dummy electrode fingers located at opposite sides of the gaps in a first direction in which the electrode fingers extend, and the third group includes the electrode fingers located at sides of the gaps in a second direction that crosses the first direction.
摘要翻译： 表面声波装置包括：一对梳状电极，设置在压电基板上，包括电极指和虚拟电极指，所述一对梳型电极中的一个的电极指与所述虚拟电极指的面对 其他梳型电极; 以及附加膜，其被设置为覆盖电极指的末端和虚拟电极指的末端之间的间隙，并且与第一和第三组中的至少一个重叠，其中第一和第二组分别包括电极指和 位于电极指的第一方向的间隙的相对侧的虚设电极指，第三组包括位于沿与第一方向相反的第二方向的间隙侧的电极指。
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公开(公告)号：US20230275566A1
公开(公告)日：2023-08-31
申请号：US18170944
申请日：2023-02-17
发明人： Takashi MATSUDA
CPC分类号： H03H9/173 , H03H9/133 , H03H9/568 , H03H9/706 , H03H9/02031
摘要： An acoustic wave device includes a first piezoelectric layer that is a rotated Y-cut lithium tantalate substrate and has a first thickness, a second piezoelectric layer that is a rotated Y-cut lithium niobate substrate, is stacked on the first piezoelectric layer, has a second thickness that is less than the first thickness, and has a spontaneous polarization direction that is substantially opposite to a spontaneous polarization direction of the first piezoelectric layer, a first electrode provided on an opposite surface of the first piezoelectric layer from the second piezoelectric layer, and a second electrode that is provided on an opposite surface of the second piezoelectric layer from the first piezoelectric layer, at least a part of the first piezoelectric layer and at least a part of the second piezoelectric layer being interposed between the first electrode and the second electrode.
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公开(公告)号：US20200169245A1
公开(公告)日：2020-05-28
申请号：US16688446
申请日：2019-11-19
发明人： Takashi MATSUDA , Yoshio SATOH , Mamoru ISHIDA
摘要： An acoustic wave device includes: a piezoelectric substrate; electrodes sandwiching the piezoelectric substrate and exciting a thickness shear vibration in the piezoelectric substrate; and an edge region that is a region surrounding a center region of a resonance region, wherein a first region of the edge region is located on both sides of the center region in a first direction substantially parallel to a displacement direction of a thickness shear vibration, a second region of the edge region is located on both sides of the center region in a second direction substantially perpendicular to the first direction, a width of the second region is different from a width of the first region, and acoustic velocities of acoustic waves in the piezoelectric substrate in the first and second regions are less than that in the piezoelectric substrate in the center region.
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公开(公告)号：US20180375491A1
公开(公告)日：2018-12-27
申请号：US16002706
申请日：2018-06-07
发明人： Masafumi IWAKI , Takashi MATSUDA
CPC分类号： H03H9/02834 , H03H9/02559 , H03H9/02574 , H03H9/02858 , H03H9/02866 , H03H9/02992 , H03H9/14541 , H03H9/14552 , H03H9/25 , H03H9/6483 , H03H9/725
摘要： An acoustic wave resonator includes: a piezoelectric substrate that is a lithium tantalate substrate or a lithium niobate substrate and has a thickness of 20 μm or less; a support substrate that has an upper surface bonded with a lower surface of the piezoelectric substrate And is a glass substrate mainly composed of silicon oxide; a plurality of electrode fingers that are located on an upper surface of the piezoelectric substrate, excite an acoustic wave, and include a metal film mainly composed of at least one of Cr, Mo, and W.
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公开(公告)号：US20180159499A1
公开(公告)日：2018-06-07
申请号：US15803699
申请日：2017-11-03
发明人： Hidetaro NAKAZAWA , Takashi MATSUDA
CPC分类号： H03H9/02834 , H03H9/02102 , H03H9/02535 , H03H9/0523 , H03H9/0571 , H03H9/0576 , H03H9/059 , H03H9/1042 , H03H9/1085 , H03H9/72 , H05K1/0203 , H05K1/0209 , H05K1/0243 , H05K2201/1006 , H05K2201/10068 , H05K2201/10083 , H05K2201/10568 , H05K2201/10575 , H05K2203/1327
摘要： An electronic component includes: a first substrate; a second substrate that includes a functional element formed on a lower surface of the second substrate, the second substrate being mounted on the first substrate so that the functional element faces an upper surface of the first substrate across an air gap; and an insulating film that is located on the upper surface of the first substrate, overlaps with at least a part of the functional element in plan view, faces the functional element across the air gap, and has a film thickness that is more than half of a distance between a lower surface of the functional element and the upper surface of the first substrate.
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公开(公告)号：US20180034443A1
公开(公告)日：2018-02-01
申请号：US15634893
申请日：2017-06-27
CPC分类号： H03H9/725 , H03H9/14541 , H03H9/14544 , H03H9/1457 , H03H9/64
摘要： A multiplexer includes: a first filter including a series resonator connected in series and a parallel resonator connected in parallel between a common terminal and a first terminal, each of the series resonator and the parallel resonator including an IDT located on a piezoelectric substrate, first and second regions being alternately located in an extension direction of electrode fingers, which excite an acoustic wave, within an overlap region of the IDT in which the electrode fingers overlap, a width of at least one of the electrode fingers in the second region being greater than that in the first region, one or some resonators of the parallel resonator and the series resonator having a larger number of the second regions than a remaining resonator; and a second filter connected between the common terminal and a second terminal and having a passband higher than a passband of the first filter.
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公开(公告)号：US20170244387A1
公开(公告)日：2017-08-24
申请号：US15422890
申请日：2017-02-02
摘要： A duplexer includes: a first filter connected between a common terminal and a first terminal and including first series and first parallel resonators; a second filter having a passband higher than that of the first filter, connected between the common terminal and a second terminal, and including second series and second parallel resonators; a first chip including the first series and second parallel resonators mounted thereon; a second chip including the first parallel and second series resonators mounted thereon, wherein when GA and HGB represent temperature coefficients of antiresonant frequencies of the first and second series resonators, and HGA and GB represent temperature coefficients of resonant frequencies of the first and second parallel resonators, a magnitude relationship among GA, GB, HGA, and HGB is none of a relationship in which GA (GB) differs from HGA (HGB), and GB (GA) and HGB (HGA) are located between GA (GB) and HGA (HGB).
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