ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER

    公开(公告)号:US20240283426A1

    公开(公告)日:2024-08-22

    申请号:US18435564

    申请日:2024-02-07

    CPC classification number: H03H9/13 H03H9/05 H03H9/15 H03H9/568 H03H9/70

    Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least one pair of comb-shaped electrodes provided on the piezoelectric layer, the at least one pair of comb-shaped electrodes including a plurality of electrode fingers, a first intermediate layer provided between the support substrate and the piezoelectric layer, a second intermediate layer provided between the support substrate and the first intermediate layer, the second intermediate layer having a porosity higher than a porosity of the first intermediate layer, and a third intermediate layer provided between the support substrate and the second intermediate layer, the third intermediate layer having a porosity lower than the porosity of the second intermediate layer.

    ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER

    公开(公告)号:US20220368307A1

    公开(公告)日:2022-11-17

    申请号:US17724346

    申请日:2022-04-19

    Abstract: An acoustic wave device includes a piezoelectric layer, a pair of comb-shaped electrodes disposed on a first surface of the piezoelectric layer, each of the pair of comb-shaped electrodes including electrode fingers that excite an acoustic wave, a support substrate disposed at a second surface side of the piezoelectric layer, and having protruding portions and/or recessed portions on a first surface, which is closer to the piezoelectric layer, of the support substrate, each of the protruding portions and/or the recessed portions having a shape in which each of left and right side surfaces has linear slopes inclined at different angles with respect to the first surface of the piezoelectric layer in a cross-sectional view, and a second insulating layer located between the piezoelectric layer and the support substrate and disposed on the third surface, on which the protruding portions and/or the recessed portions are formed, of the support substrate.

    ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER

    公开(公告)号:US20220038071A1

    公开(公告)日:2022-02-03

    申请号:US17364462

    申请日:2021-06-30

    Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer provided over the support substrate, comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including electrode fingers exciting an acoustic wave, a temperature compensation film interposed between the support substrate and the piezoelectric layer and having a temperature coefficient of an elastic constant opposite in sign to that of the piezoelectric layer, a boundary layer interposed between the support substrate and the temperature compensation film, an acoustic velocity of a bulk wave propagating through the boundary layer being higher than an acoustic velocity of a bulk wave propagating through the temperature compensation film and being lower than an acoustic velocity of a bulk wave propagating through the support substrate, and an intermediate layer interposed between the support substrate and the boundary layer and having a Q factor less than a Q factor of the boundary layer.

    ACOUSTIC WAVE DEVICE, WAFER, AND METHOD OF MANUFACTURING WAFER

    公开(公告)号:US20230208395A1

    公开(公告)日:2023-06-29

    申请号:US17991259

    申请日:2022-11-21

    Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate.

    ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER

    公开(公告)号:US20210399709A1

    公开(公告)日:2021-12-23

    申请号:US17323598

    申请日:2021-05-18

    Abstract: An acoustic wave device including a support substrate, a piezoelectric layer provided over the support substrate, at least one pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the at least one pair of comb-shaped electrodes including electrode fingers, a temperature compensation film interposed between the support substrate and the piezoelectric layer, the temperature compensation film having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric layer; and an insulating layer interposed between the support substrate and the temperature compensation film, a first surface of the insulating layer having first protruding portions and/or first recessed portions, a second surface of the insulating layer having second protruding portions and/or second recessed portions, the first surface being closer to the support substrate, the second surface being closer to the temperature compensation film.

    ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER

    公开(公告)号:US20200313650A1

    公开(公告)日:2020-10-01

    申请号:US16802071

    申请日:2020-02-26

    Abstract: An acoustic wave device includes: a piezoelectric substrate: a pair of comb-shaped electrodes located on the piezoelectric substrate, each of the comb-shaped electrodes including a plurality of electrode fingers; a support substrate having protruding portions and/or recessed portions in a region overlapping with the pair of comb-shaped electrodes in plan view, the protruding portions and/or recessed portions being regularly arranged; and an insulating layer directly or indirectly bonded between the piezoelectric substrate and the support substrate, a boundary face between the insulating layer and the support substrate being provided along the protruding portions and/or the recessed portions.

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