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公开(公告)号：US07711229B2
公开(公告)日：2010-05-04
申请号：US11843682
申请日：2007-08-23
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译： 在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题 增长，降低了器件的可靠性，并降低了器件制造的成品率。 在本发明中，在BJ部分上设置由InGaAsP制成的保护层。 该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。
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公开(公告)号：US20080317422A1
公开(公告)日：2008-12-25
申请号：US11843682
申请日：2007-08-23
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译： 在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题 增长，降低了器件的可靠性，并降低了器件制造的成品率。 在本发明中，在BJ部分上设置由InGaAsP制成的保护层。 该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。
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公开(公告)号：US20080219315A1
公开(公告)日：2008-09-11
申请号：US11838256
申请日：2007-08-14
CPC分类号： H01S5/0265 , B82Y20/00 , H01L2224/48091 , H01S5/02276 , H01S5/02284 , H01S5/026 , H01S5/0425 , H01S5/06256 , H01S5/101 , H01S5/12 , H01S5/227 , H01S5/34306 , H01L2924/00014
摘要： A low reflective window structure in an existent electro-absorption optical modulator involves a trading off problem between the increase in the parasitic capacitance and the pile-up. This is because the capacitance density of the pn junction in the window structure is higher compared with the pin junction as the optical absorption region, and the application of electric field to the optical absorption region becomes insufficient in a case of receding the electrode structure from the junction between the optical absorption region and the window structure making it difficult to discharge photo-carriers generated in the optical absorption region. An undope waveguide structure comprising a structure having such compositional wavelength and a film thickness that the compositional wavelength for each of multi-layers constituting the waveguide structure is sufficiently shorter than that of the signal light and the average refractive index is about identical with that in the optical absorption region may be disposed. In a case of forming the electrode structure so as to overlap the junction boundary between the optical absorption region and the undope waveguide, and do not extend on the joined boundary between the undope waveguide and the window structure, increase in the parasitic capacitance due to the pn junction of the window structure and pile up can be suppressed simultaneously.
摘要翻译： 存在的电吸收光调制器中的低反射窗结构涉及寄生电容增加和堆积之间的折衷问题。 这是因为窗口结构中的pn结的电容密度与作为光吸收区的pin结相比较高，并且在电极结构从光吸收区退出的情况下，对光吸收区的电场的施加变得不足 光吸收区域和窗口结构之间的结，使得难以放电在光吸收区域中产生的光载流子。 包括具有这种组成波长和膜厚的结构的未掺杂波导结构，构成波导结构的多层的组成波长比信号光的平均折射率充分短，并且平均折射率大致相同 可以设置光吸收区域。 在形成电极结构以与光吸收区域和未反射波导之间的接合边界重叠的情况下，并且不延伸在未波导波导和窗口结构之间的接合边界上时，寄生电容由于 pn结的窗结构和堆积可以同时抑制。
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公开(公告)号：US07577319B2
公开(公告)日：2009-08-18
申请号：US11838256
申请日：2007-08-14
CPC分类号： H01S5/0265 , B82Y20/00 , H01L2224/48091 , H01S5/02276 , H01S5/02284 , H01S5/026 , H01S5/0425 , H01S5/06256 , H01S5/101 , H01S5/12 , H01S5/227 , H01S5/34306 , H01L2924/00014
摘要： A low reflective window structure in an existent electro-absorption optical modulator involves a trading off problem between the increase in the parasitic capacitance and the pile-up. This is because the capacitance density of the pn junction in the window structure is higher compared with the pin junction as the optical absorption region, and the application of electric field to the optical absorption region becomes insufficient in a case of receding the electrode structure from the junction between the optical absorption region and the window structure making it difficult to discharge photo-carriers generated in the optical absorption region. An undope waveguide structure comprising a structure having such compositional wavelength and a film thickness that the compositional wavelength for each of multi-layers constituting the waveguide structure is sufficiently shorter than that of the signal light and the average refractive index is about identical with that in the optical absorption region may be disposed. In a case of forming the electrode structure so as to overlap the junction boundary between the optical absorption region and the undope waveguide, and do not extend on the joined boundary between the undope waveguide and the window structure, increase in the parasitic capacitance due to the pn junction of the window structure and pile up can be suppressed simultaneously.
摘要翻译： 存在的电吸收光调制器中的低反射窗结构涉及寄生电容增加和堆积之间的折衷问题。 这是因为窗口结构中的pn结的电容密度与作为光吸收区的pin结相比较高，并且在电极结构从光吸收区退出的情况下，对光吸收区的电场的施加变得不足 光吸收区域和窗口结构之间的结，使得难以放电在光吸收区域中产生的光载流子。 包括具有这种组成波长和膜厚的结构的未掺杂波导结构，构成波导结构的多层的组成波长比信号光的平均折射率充分短，并且平均折射率大致相同 可以设置光吸收区域。 在形成电极结构以与光吸收区域和未反射波导之间的接合边界重叠的情况下，并且不延伸在未波导波导和窗口结构之间的接合边界上时，寄生电容由于 pn结的窗结构和堆积可以同时抑制。
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公开(公告)号：US07340142B1
公开(公告)日：2008-03-04
申请号：US11701467
申请日：2007-02-02
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译： 集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。 在InP衬底上形成InGaAsP层，以抑制在集成光电子器件的制造期间InP的质量传输。 在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。
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公开(公告)号：US20080069493A1
公开(公告)日：2008-03-20
申请号：US11701467
申请日：2007-02-02
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. AnInGaAs Player is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译： 集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。 在InP衬底上形成AnInGaAs Player，以在集成光电子器件的制造期间抑制InP的质量传输。 在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。
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公开(公告)号：US07636378B2
公开(公告)日：2009-12-22
申请号：US12028127
申请日：2008-02-08
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译： 在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题 一部分。 为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。 或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。
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公开(公告)号：US20090129421A1
公开(公告)日：2009-05-21
申请号：US12028127
申请日：2008-02-08
IPC分类号： H01S5/323
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译： 在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题 一部分。 为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。 或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。
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9.发明授权公开(公告)号：US08774571B2
公开(公告)日：2014-07-08
申请号：US13590718
申请日：2012-08-21
申请人： Kazunori Shinoda , Shigeki Makino , Hideo Arimoto
发明人： Kazunori Shinoda , Shigeki Makino , Hideo Arimoto
IPC分类号： G02B6/12
CPC分类号： G02F1/13471 , H01S5/0085 , H01S5/02216 , H01S5/02284 , H01S5/0265 , H01S5/06256 , H01S5/1209
摘要： An optical device includes a substrate and a first optical waveguide including a mesa. The mesa includes a first lower clad layer portion, a first core layer portion, and a first upper clad layer portion. The first lower clad layer portion, the first core layer portion, and the first upper clad layer portion are disposed in this order from the substrate side. The optical device also includes a first etch stop layer configured to stop etching when the first optical waveguide is formed. The first etch stop layer being laminated over the substrate. The first optical waveguide is laminated on the first etch stop layer.
摘要翻译： 光学装置包括基板和包括台面的第一光波导。 台面包括第一下包层部分，第一芯层部分和第一上包层部分。 第一下包层部分，第一芯层部分和第一上包层部分从衬底侧依次设置。 该光学器件还包括第一蚀刻停止层，其被配置为在形成第一光波导时停止蚀刻。 第一蚀刻停止层层压在衬底上。 第一光波导层压在第一蚀刻停止层上。
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10.发明授权Optical device, modulator module, and method for manufacturing the optical device 有权光学器件，调制器模块以及用于制造光学器件的方法公开(公告)号：US09110315B2
公开(公告)日：2015-08-18
申请号：US13488511
申请日：2012-06-05
CPC分类号： G02F1/025 , G02B2006/12097 , G02B2006/12135 , G02B2006/12142 , G02F1/2257 , G02F2201/063 , G02F2201/50 , H01S5/0265 , H01S5/12 , H01S5/227
摘要： An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.
摘要翻译： 光学装置包括脊状光波导部分，平行于光波导部分的台面保护部分，覆盖台面保护部分的上部并设置在台面保护部分两侧的树脂部分 设置在所述光波导路部分上的电极，设置在与所述台面保护器部分相对的所述光波导部分相对侧的所述树脂部分上的电极焊盘和设置在所述树脂上的连接部分 并将电极电连接到电极焊盘。
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