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公开(公告)号：US20100189154A1
公开(公告)日：2010-07-29
申请号：US12628834
申请日：2009-12-01
IPC分类号： H01L29/20 , H01S5/125 , H01L31/107 , H01L31/105
CPC分类号： H01L31/105 , G02B6/12007 , G02B6/12009 , G02B6/29344 , G02B6/29352 , G02B2006/12097 , G02B2006/121 , G02B2006/12159 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02581 , H01L31/03042 , H01L31/107 , H01S5/0208 , H01S5/0265 , H01S5/0425 , H01S5/12 , H01S5/125 , H01S5/227
摘要： A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru—InP layer on a Ru—InP substrate or an Fe—InP substrate is used and semiconductor layers of an n-type semiconductor layer, a quantum-well layer, and a p-type semiconductor layer are stacked in this order.
摘要翻译： 目的是提供一种半绝缘InP衬底上具有良好特性的半导体光学器件。 首先，使用在导电性基板上具有Ru-InP层的半绝缘基板。 其次，使用在Ru-InP衬底或Fe-InP衬底上包含Ru-InP层的半绝缘衬底，并且使用n型半导体层，量子阱层和p型半导体的半导体层 层以此顺序堆叠。
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公开(公告)号：US07711229B2
公开(公告)日：2010-05-04
申请号：US11843682
申请日：2007-08-23
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译： 在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题 增长，降低了器件的可靠性，并降低了器件制造的成品率。 在本发明中，在BJ部分上设置由InGaAsP制成的保护层。 该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。
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公开(公告)号：US07636378B2
公开(公告)日：2009-12-22
申请号：US12028127
申请日：2008-02-08
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译： 在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题 一部分。 为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。 或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。
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公开(公告)号：US5747864A
公开(公告)日：1998-05-05
申请号：US688741
申请日：1996-07-31
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0304 , H01L31/0352 , H01L31/05 , H01L31/10 , H01L31/18 , H01L29/04 , H01L31/075
CPC分类号： H01L31/184 , H01L31/03042 , H01L31/03529 , H01L31/047 , H01L31/05 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A light receiving element having excellent characteristics, including high sensitivity and high response speed, can be achieved by a light element comprising unit structures each having two pn junction semiconductor layers, and a lightly doped semiconductor layer having low impurity density, lower than those of the p-type regions and the n-type regions of the two pn junction semiconductor layers, and which is sandwiched between the two pn junction semiconductor layers. The p-type regions of the pn junction semiconductor layers are disposed opposite to each other on opposite sides of the lightly doped semiconductor layer, respectively, and the n-type regions of the pn junction semiconductor layers are disposed opposite to each other on the opposite sides of the lightly doped semiconductor layer, respectively. In a method of fabricating such a light receiving element, using controlled shutters or an ion beam apparatus, the layers are formed of optimum semiconductors, in an optimum thickness and in optimum impurity densities. In this structure, photogenerated carriers move mainly through the lightly doped semiconductor layer. Therefore, the lifetime of the carriers is increased, and the drift mobility of the carriers is enhanced, so that the light receiving element is able to function with a high sensitivity at a high response speed.
摘要翻译： 具有高灵敏度和高响应速度的具有优异特性的光接收元件可以通过包括单元结构的光元件实现，该元件具有两个pn结半导体层，以及低杂质浓度的轻掺杂半导体层， p型区域和两个pn结半导体层的n型区域，并且夹在两个pn结半导体层之间。 pn结半导体层的p型区域分别在轻掺杂半导体层的相对侧彼此相对设置，并且pn结半导体层的n型区域在相对的对置设置为彼此相对 侧掺杂半导体层。 在制造这种光接收元件的方法中，使用受控的快门或离子束装置，这些层由最佳半导体形成，具有最佳厚度和最佳杂质浓度。 在这种结构中，光生载流子主要通过轻掺杂的半导体层移动。 因此，载流子的寿命增加，并且载流子的漂移迁移率增强，使得光接收元件能够以高响应速度以高灵敏度起作用。
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5.发明授权Semiconductor electroluminescent device with a multiple-quantum well layer formed therein 有权其中形成有多量子阱层的半导体场致发光器件公开(公告)号：US08610105B2
公开(公告)日：2013-12-17
申请号：US12614859
申请日：2009-11-09
申请人： Toshihiko Fukamachi , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
发明人： Toshihiko Fukamachi , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
IPC分类号： H01L33/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/3403 , H01S5/3407
摘要： Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.
摘要翻译： 提供了具有拉伸应变的具有InGaAlAs的阱层的半导体场致发光器件，或具有拉伸应变的InGaAsP基阱层和具有InGaAlAs基阻挡层的半导体场致发光器件，其在高温下具有高可靠性 宽温度范围 在半导体电致发光器件的多量子阱层中，阱层和势垒层之间的界面处的界面应变的大小小于由层厚度值确定的临界界面应变的大小，该层厚度值是 阱层的厚度和阻挡层的厚度。
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公开(公告)号：US07340142B1
公开(公告)日：2008-03-04
申请号：US11701467
申请日：2007-02-02
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译： 集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。 在InP衬底上形成InGaAsP层，以抑制在集成光电子器件的制造期间InP的质量传输。 在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。
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公开(公告)号：US20070241344A1
公开(公告)日：2007-10-18
申请号：US11733229
申请日：2007-04-10
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L33/06 , H01S5/0014 , H01S5/18311 , H01S5/2213 , H01S5/2231 , H01S5/34306 , H01S5/34353
摘要： For a semiconductor light emitting device using GaInNAs as an active layer, since GaInNAs includes N, the critical thickness is reduced and it is difficult to lengthen the wavelength of a laser beam. A semiconductor light emitting device is prepared, which has an active layer comprising a quantum well layer formed by successively stacking a GaInNAs layer and a GaInAs layer and GaAs barrier layers stacked on both sides of the quantum well layer. The quantum level of the conduction band is present above the conduction band edge of the GaInAs layer.
摘要翻译： 对于使用GaInNA作为有源层的半导体发光器件，由于GaInNA包括N，临界厚度减小，并且难以延长激光束的波长。 制备半导体发光器件，其具有包括通过连续层叠GaInNA层和GaInAs层而形成的量子阱层的活性层和层叠在量子阱层两侧的GaAs势垒层。 导带的量子水平存在于GaInAs层的导带边缘之上。
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公开(公告)号：US08270446B2
公开(公告)日：2012-09-18
申请号：US12718009
申请日：2010-03-05
申请人： Takashi Shiota , Takeshi Kitatani
发明人： Takashi Shiota , Takeshi Kitatani
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/0265 , H01S5/12 , H01S5/187 , H01S5/2209 , H01S5/2226 , H01S5/2227 , H01S5/2275
摘要： High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity.
摘要翻译： 实现了具有掩埋异质结构的半导体激光器件的高性能和高可靠性。 具有掩埋异质结构的半导体激光器件通过用Ru掺杂的InGaP宽间隙层掩埋台面结构的两面并随后通过组成从InGaP分级为InP的Ru掺杂的InGaP梯度层而制造，以及 然后，通过Ru掺杂的InP层。 通过在Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层之间提供Ru掺杂的InGaP渐变层，Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层彼此不格子匹配 可以形成具有优异结晶度的埋层。
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公开(公告)号：US07329894B2
公开(公告)日：2008-02-12
申请号：US11202285
申请日：2005-08-12
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2009 , H01S5/3213 , H01S5/3216 , H01S5/34306 , H01S5/34366 , H01S2304/04
摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics.According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.
摘要翻译： 由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了 载体和劣化的器件特性。 根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体， 并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性 在形成II型频带阵列的异质界面处。
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公开(公告)号：US20060237710A1
公开(公告)日：2006-10-26
申请号：US11202285
申请日：2005-08-12
IPC分类号： H01L29/06
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2009 , H01S5/3213 , H01S5/3216 , H01S5/34306 , H01S5/34366 , H01S2304/04
摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics. According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.
摘要翻译： 由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了 载体和劣化的器件特性。 根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体， 并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性 在形成II型频带阵列的异质界面处。
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