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    SEMICONDUCTOR ELECTROLUMINESCENT DEVICE
    1.
    发明申请
    SEMICONDUCTOR ELECTROLUMINESCENT DEVICE 有权
    半导体电致发光器件

    公开(公告)号：US20100288997A1

    公开(公告)日：2010-11-18

    申请号：US12614859

    申请日：2009-11-09

    申请人： Toshihiko FUKAMACHI ,  Takashi Shiota ,  Takeshi Kitatani ,  Nozomu Yasuhara ,  Atsushi Nakamura ,  Mitsuhiro Sawada

    发明人： Toshihiko FUKAMACHI ,  Takashi Shiota ,  Takeshi Kitatani ,  Nozomu Yasuhara ,  Atsushi Nakamura ,  Mitsuhiro Sawada

    IPC分类号： H01L33/00

    CPC分类号： H01S5/3434 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01S5/3403 ,  H01S5/3407

    摘要： Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.

    摘要翻译： 提供了具有拉伸应变的具有InGaAlAs的阱层的半导体场致发光器件，或具有拉伸应变的InGaAsP基阱层和具有InGaAlAs基阻挡层的半导体场致发光器件，其在高温下具有高可靠性 宽温度范围 在半导体电致发光器件的多量子阱层中，阱层和势垒层之间的界面处的界面应变的大小小于由层厚度值确定的临界界面应变的大小，该层厚度值是 阱层的厚度和阻挡层的厚度。

    Semiconductor laser diode and integrated semiconductor optical waveguide device
    2.
    发明授权
    Semiconductor laser diode and integrated semiconductor optical waveguide device 有权
    半导体激光二极管和集成半导体光波导器件

    公开(公告)号：US07463663B2

    公开(公告)日：2008-12-09

    申请号：US11703159

    申请日：2007-02-07

    申请人： Toshihiko Fukamachi ,  Shigeki Makino ,  Takafumi Taniguchi ,  Masahiro Aoki

    发明人： Toshihiko Fukamachi ,  Shigeki Makino ,  Takafumi Taniguchi ,  Masahiro Aoki

    IPC分类号： H01S5/00

    CPC分类号： H01S5/0265 ,  B82Y20/00 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3434 ,  H01S2301/173

    摘要： A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.

    摘要翻译： 常规的半导体激光二极管在恒定的工作电流下的光功率小，并且在与光学器件集成时限制了脊宽度，这迫使通过降低原始特性来执行集成，并且难以降低成本和功耗。 在半导体激光二极管中，通过降低脊与其它成分之间的折射率差，可以扩大脊宽度，通过沿着两侧的大致垂直的槽形成扩散电流和折射率差的增加来防止 并且通过在脊上形成衍射光栅来防止由于再生长导致的特性劣化。 半导体激光二极管与诸如电吸收型光学调制器的光学装置集成，而不增加生长周期，并且通过使用锥形波导不限制脊宽度。

    Micro sensor device
    3.
    发明申请
    Micro sensor device 失效
    微传感器装置

    公开(公告)号：US20070014505A1

    公开(公告)日：2007-01-18

    申请号：US11485294

    申请日：2006-07-13

    申请人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

    发明人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

    IPC分类号： G02B6/00

    CPC分类号： G02B6/12004 ,  G01J3/26 ,  G01N21/4133 ,  G02B2006/1213 ,  G02B2006/12164

    摘要： The present invention provides an ultra-mini and low cost refractive index measuring device applicable to biochemical measurements of an extremely minute amount of a sample. The refractive index measuring device uses a photonic crystal without any requirement of an external spectrograph or the like. The micro sensor device according to the present invention includes a light source emitting light with a single wavelength, a microcavity in which a resonant wavelength varies depending on a position thereof. A refractive index of a material to be measured is measured based on positional information by detecting a transmitting position of light changing in response to a change of a refractive index of the measured material. The micro sensor device according to the present invention enables measurement of a refractive index of a material to be measured without using a large-scale spectrograph.

    摘要翻译： 本发明提供了一种适用于极微量样品的生物化学测量的超小型和低成本折射率测量装置。 折射率测量装置使用光子晶体，而不需要外部光谱仪等。 根据本发明的微型传感器装置包括发射具有单一波长的光的光源，其中谐振波长根据其位置而变化的微腔。 通过检测响应于测量材料的折射率的变化而变化的光的透射位置，基于位置信息来测量要测量的材料的折射率。 根据本发明的微型传感器装置能够在不使用大规模光谱仪的情况下测量待测材料的折射率。

    Micro sensor device
    5.
    发明授权
    Micro sensor device 失效
    微传感器装置

    公开(公告)号：US07450789B2

    公开(公告)日：2008-11-11

    申请号：US11485294

    申请日：2006-07-13

    申请人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

    发明人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

    IPC分类号： G02B6/00

    CPC分类号： G02B6/12004 ,  G01J3/26 ,  G01N21/4133 ,  G02B2006/1213 ,  G02B2006/12164

    摘要： The present invention provides an ultra-mini and low cost refractive index measuring device applicable to biochemical measurements of an extremely minute amount of a sample. The refractive index measuring device uses a photonic crystal without any requirement of an external spectrograph or the like.The micro sensor device according to the present invention includes a light source emitting light with a single wavelength, a microcavity in which a resonant wavelength varies depending on a position thereof. A refractive index of a material to be measured is measured based on positional information by detecting a transmitting position of light changing in response to a change of a refractive index of the measured material. The micro sensor device according to the present invention enables measurement of a refractive index of a material to be measured without using a large-scale spectrograph.

    摘要翻译： 本发明提供了一种适用于极微量样品的生物化学测量的超小型和低成本折射率测量装置。 折射率测量装置使用光子晶体，而不需要外部光谱仪等。 根据本发明的微型传感器装置包括发射具有单一波长的光的光源，其中谐振波长根据其位置而变化的微腔。 通过检测响应于测量材料的折射率的变化而变化的光的透射位置，基于位置信息来测量要测量的材料的折射率。 根据本发明的微型传感器装置能够在不使用大规模光谱仪的情况下测量待测材料的折射率。

    Semiconductor laser diode and integrated semiconductor optical waveguide device
    6.
    发明申请
    Semiconductor laser diode and integrated semiconductor optical waveguide device 有权
    半导体激光二极管和集成半导体光波导器件

    公开(公告)号：US20070195847A1

    公开(公告)日：2007-08-23

    申请号：US11703159

    申请日：2007-02-07

    申请人： Toshihiko Fukamachi ,  Shigeki Makino ,  Takafumi Taniguchi ,  Masahiro Aoki

    发明人： Toshihiko Fukamachi ,  Shigeki Makino ,  Takafumi Taniguchi ,  Masahiro Aoki

    IPC分类号： H01S5/00 ,  H01S3/04

    CPC分类号： H01S5/0265 ,  B82Y20/00 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3434 ,  H01S2301/173

    摘要： A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.

    摘要翻译： 常规的半导体激光二极管在恒定的工作电流下的光功率小，并且在与光学器件集成时限制了脊宽度，这迫使通过降低原始特性来执行集成，并且难以降低成本和功耗。 在半导体激光二极管中，通过降低脊与其它成分之间的折射率差，可以扩大脊宽度，通过沿着两侧的大致垂直的槽形成扩散电流和折射率差的增加来防止 并且通过在脊上形成衍射光栅来防止由于再生长导致的特性劣化。 半导体激光二极管与诸如电吸收型光学调制器的光学装置集成，而不增加生长周期，并且通过使用锥形波导不限制脊宽度。