公开(公告)号：US11621357B2

公开(公告)日：2023-04-04

申请号：US17282629

申请日：2019-10-09

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi ,  Kohei Sasaki

IPC: H01L29/24 ,  H01L29/872 ,  H01L29/41 ,  H01L29/47

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

公开(公告)号：US20250003110A1

公开(公告)日：2025-01-02

申请号：US18886067

申请日：2024-09-16

Applicant: TDK Corporation

Inventor： Katsumi KAWASAKI ,  Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi

IPC: C30B15/10 ,  C30B15/02 ,  C30B29/16

Abstract: A crucible for growing an oxide single crystal comprises a body that includes an oxide containing an additive. In the oxide of the body, a plurality of regions arranged along one axis is set and, among the regions, a concentration of the additive in a first region is higher than a concentration of the additive in a second region. A crystal manufacturing method grows an oxide single crystal by moving a position of an exposed surface of a melt in a crucible along a vertical direction while keeping a seed crystal in contact with the exposed surface. In a gallium oxide single crystal, a concentration of an additive along a growth axis may be within the range of ±5% of an average concentration of the additive.

公开(公告)号：US11846037B2

公开(公告)日：2023-12-19

申请号：US17702158

申请日：2022-03-23

Applicant: TDK CORPORATION

Inventor： Katsumi Kawasaki ,  Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi

IPC: C30B13/18 ,  C30B15/16 ,  C30B15/30 ,  C30B15/20 ,  C30B29/16

CPC classification number: C30B15/16 ,  C30B15/20 ,  C30B15/30 ,  C30B29/16

Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.

公开(公告)号：US11699766B2

公开(公告)日：2023-07-11

申请号：US16646074

申请日：2018-08-30

Applicant: TDK Corporation

Inventor： Jun Arima ,  Jun Hirabayashi ,  Minoru Fujita ,  Katsumi Kawasaki ,  Daisuke Inokuchi

IPC: H01L29/24 ,  H01L29/872

CPC classification number: H01L29/8725 ,  H01L29/24

Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.

公开(公告)号：US11946155B2

公开(公告)日：2024-04-02

申请号：US17299695

申请日：2019-12-03

Applicant: TDK CORPORATION

Inventor： Katsumi Kawasaki ,  Jun Hirabayashi ,  Minoru Fujita ,  Daisuke Inokuchi ,  Jun Arima ,  Makio Kondo

IPC: C30B11/00 ,  C30B29/16

CPC classification number: C30B11/002 ,  C30B29/16

Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

公开(公告)号：US11908955B2

公开(公告)日：2024-02-20

申请号：US17802438

申请日：2021-02-04

Applicant: TDK Corporation

Inventor： Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/167 ,  H01L29/40

CPC classification number: H01L29/872 ,  H01L29/0611 ,  H01L29/167 ,  H01L29/40

Abstract: A Schottky barrier diode 1 includes: a semiconductor substrate made of gallium oxide; a drift layer made of gallium oxide; an anode electrode brought into Schottky contact with an upper surface of the drift layer; and a cathode electrode brought into ohmic contact with a lower surface of the semiconductor substrate. A ring-shaped outer peripheral trench is formed in the upper surface of the drift layer, and the anode electrode is partly filled in the outer peripheral trench. A ring-shaped back surface trench is formed in the lower surface of the semiconductor substrate such that the bottom thereof reaches the drift layer. This limits a current path to the area surrounded by the back surface trench, thereby mitigating electric field concentration in the vicinity of the bottom of the outer peripheral trench.

公开(公告)号：US11557681B2

公开(公告)日：2023-01-17

申请号：US17282610

申请日：2019-10-09

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi ,  Kohei Sasaki

IPC: H01L29/872 ,  H01L29/47

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.

公开(公告)号：US11456388B2

公开(公告)日：2022-09-27

申请号：US16977190

申请日：2019-02-25

Applicant: TAMURA CORPORATION ,  Novel Crystal Technology, Inc. ,  TDK Corporation

Inventor： Kohei Sasaki ,  Minoru Fujita ,  Jun Hirabayashi ,  Jun Arima

IPC: H01L29/872 ,  H01L29/423 ,  H01L21/311 ,  H01L29/47 ,  H01L29/66

Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 μm in a region including the inner surface of the trench.

公开(公告)号：US11626522B2

公开(公告)日：2023-04-11

申请号：US16758790

申请日：2018-09-26

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun Arima ,  Jun Hirabayashi ,  Minoru Fujita ,  Kohei Sasaki

IPC: H01L29/06 ,  H01L29/872 ,  H01L29/24

Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.

公开(公告)号：US11492724B2

公开(公告)日：2022-11-08

申请号：US16982280

申请日：2019-01-25

Applicant: TDK CORPORATION

Inventor： Katsumi Kawasaki ,  Jun Hirabayashi ,  Minoru Fujita ,  Daisuke Inokuchi ,  Jun Arima ,  Makio Kondo

IPC: C30B15/34 ,  C30B29/16

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.