公开(公告)号：US20170226018A1

公开(公告)日：2017-08-10

申请号：US15422087

申请日：2017-02-01

Applicant: TDK CORPORATION

Inventor： Kazutaka FUJITA ,  Kazuhiko ITOH ,  Yoshikazu SHIMURA ,  Hiroki MORIKOSHI ,  Tomohiro TERADA

IPC: C04B35/495 ,  H01C7/02 ,  H01C1/14

CPC classification number: C04B35/495 ,  C04B35/462 ,  C04B35/4682 ,  C04B35/62615 ,  C04B35/6263 ,  C04B35/62645 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3236 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3268 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/79 ,  C04B2235/9607 ,  H01C1/14 ,  H01C7/02 ,  H01C7/025

Abstract: A semiconductor ceramic composition represented by formula (1), (BavBixAyREw)m(TiuTMz)O3  (1), wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; 0.750y≦x≦1.50y  (2), 0.007≦y≦0.125  (3), 0≦(w+z)≦0.010  (4), v+x+y+w=1  (5), u+z=1  (6), 0.950≦m≦1.050  (7), 0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

公开(公告)号：US20250083957A1

公开(公告)日：2025-03-13

申请号：US18727123

申请日：2023-03-30

Applicant: TDK Corporation ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yukari INOUE ,  Tomohiro TERADA ,  Junichi KIMURA ,  Masato UEHARA ,  Kenji HIRATA ,  Hiroshi YAMADA ,  Morito AKIYAMA

IPC: C01B21/06 ,  H10N30/076 ,  H10N30/853

Abstract: A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.

公开(公告)号：US20170229219A1

公开(公告)日：2017-08-10

申请号：US15409989

申请日：2017-01-19

Applicant: TDK CORPORATION

Inventor： Kazuhiko ITOH ,  Yoshikazu SHIMURA ,  Kazutaka FUJITA ,  Hiroki MORIKOSHI ,  Tomohiro TERADA

IPC: H01C7/02 ,  H01C1/14 ,  C04B35/645 ,  C04B35/468 ,  C04B35/626

CPC classification number: H01C7/022 ,  C04B35/4682 ,  C04B35/6261 ,  C04B35/6264 ,  C04B35/62675 ,  C04B35/645 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3236 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3268 ,  C04B2235/3298 ,  C04B2235/3436 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/612 ,  C04B2235/656 ,  C04B2235/782 ,  C04B2235/784 ,  C04B2235/786 ,  C04B2235/96 ,  H01C1/14 ,  H01C7/025 ,  H01L41/1871

Abstract: A semiconductor ceramic composition which is a BaTiO3 based semiconductor ceramic composition, wherein, part of Ba is replaced by at least A (at least one alkali metal element selected from Na and K), Bi and RE (at least one element selected from rare earth elements including Y), and part of Ti is replaced by at least TM (at least one element selected from the group including of V, Nb and Ta), the relationships of 0.7≦{(the content of Bi)/(the content of A)}≦1.43, 0.017≦{(the content of Bi)+(the content of A)}≦0.25, and 0