公开(公告)号：US11790967B2

公开(公告)日：2023-10-17

申请号：US17420053

申请日：2020-05-15

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Tatsuo Shibata ,  Yugo Ishitani

IPC: G11C11/16 ,  H01L29/82 ,  H10N50/10 ,  H01L27/105 ,  G11C11/15

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L29/82 ,  H10N50/10 ,  G11C11/15 ,  H01L27/105

Abstract: A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.

公开(公告)号：US11335849B2

公开(公告)日：2022-05-17

申请号：US16191893

申请日：2018-11-15

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Tomoyuki Sasaki ,  Yukio Terasaki ,  Tatsuo Shibata

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic domain wall displacement type magnetic recording element which comprises: a first magnetization fixed part which is stacked in a first direction, a magnetic recording layer which includes a magnetic domain wall and extends in a second direction which crosses with the first direction, a non-magnetic layer which is provided between the first magnetization fixed part and the magnetic recording layer, and a first via part which is electrically connected to the magnetic recording layer, wherein at least a part of the first via part is located at a position which is apart from the first magnetization fixed part in the second direction in planar view observed from the first direction, the magnetic recording layer includes a first part which has a position where the first magnetization fixed part overlaps with the magnetic recording layer in planar view observed from the first direction, and a width of the first via part in a third direction which is orthogonal to the second direction is larger than a width of said position of the first part of the magnetic recording layer.

公开(公告)号：US20250126806A1

公开(公告)日：2025-04-17

申请号：US18999700

申请日：2024-12-23

Applicant: TDK CORPORATION

Inventor： Toshiki GUSHI ,  Shogo Yamada ,  Tatsuo Shibata ,  Tomoyuki Sasaki

IPC: H10B61/00

Abstract: This domain wall motion element includes a first magnetoresistance effect element and a first transistor. A first domain wall displacement layer of the first magnetoresistance effect element is electrically connected to a first active region of the first transistor. The length of the first magnetoresistance effect element in a first direction is longer than the length thereof in a second direction. The length of a first gate in the first direction is longer than the length thereof in the second direction. The length of the first magnetoresistance effect element in the first direction is longer than the length of the first gate in the first direction. A first gate length direction connecting the first active region and a second active region intersects with the first direction.

公开(公告)号：US12131252B2

公开(公告)日：2024-10-29

申请号：US17507561

申请日：2021-10-21

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Tatsuo Shibata

IPC: G06N3/065 ,  G11C11/16 ,  G11C11/54 ,  H10B61/00 ,  H10N50/80

CPC classification number: G06N3/065 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/54 ,  H10B61/00 ,  H10N50/80

Abstract: A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

公开(公告)号：US11758826B2

公开(公告)日：2023-09-12

申请号：US17491028

申请日：2021-09-30

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Tatsuo Shibata

IPC: G11C11/16 ,  H10N52/80 ,  G06F7/544 ,  H01F10/32 ,  G06N3/065 ,  H10B61/00 ,  H10N52/00 ,  H10N52/01

CPC classification number: H10N52/80 ,  G06F7/5443 ,  G06N3/065 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H10B61/22 ,  H10N52/00 ,  H10N52/01

Abstract: According to an embodiment, there is provided an integrated device including: a substrate; and a laminated structure stacked on the substrate, in which the laminated structure includes a first element group and a second element group disposed at a position farther from the substrate than the first element group, each of the first element group and the second element group includes a plurality of domain wall movement elements, each of the plurality of domain wall movement elements includes a domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the domain wall movement layer and the ferromagnetic layer, and each of the domain wall movement elements belonging to the second element group has a lower critical current density required for moving a domain wall of the domain wall movement layer than each of the domain wall movement elements belonging to the first element group.

公开(公告)号：US12225830B2

公开(公告)日：2025-02-11

申请号：US17542647

申请日：2021-12-06

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Minoru Ota ,  Tatsuo Shibata

IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer which is laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of a film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

公开(公告)号：US12058872B2

公开(公告)日：2024-08-06

申请号：US17207236

申请日：2021-03-19

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Tatsuo Shibata ,  Tomoyuki Sasaki

IPC: H01L27/22 ,  G06N3/063 ,  G06N3/065 ,  G06N3/08 ,  G11C11/16 ,  G11C11/54 ,  H01L43/02 ,  H01L43/08 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N59/00 ,  G06N3/044

CPC classification number: H10B61/00 ,  G06N3/063 ,  G06N3/065 ,  G06N3/08 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/54 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80 ,  H10N59/00 ,  G06N3/044

Abstract: An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.