公开(公告)号：US20190249059A1

公开(公告)日：2019-08-15

申请号：US16309132

申请日：2017-06-12

Applicant: TEIJIN LIMITED

Inventor： Masanori MAEDA ,  Azusa KOHNO ,  Yoshinori IKEDA

IPC: C09K5/14 ,  C01B32/956 ,  C04B35/80 ,  C04B35/65

CPC classification number: C09K5/14 ,  C01B32/956 ,  C01P2002/54 ,  C01P2004/62 ,  C04B35/573 ,  C04B35/65 ,  C04B35/806 ,  C04B2235/3826 ,  C04B2235/5248 ,  C04B2235/5264 ,  C04B2235/5445 ,  C04B2235/9607

Abstract: Provided is a method for producing a novel silicon carbide that can be reacted at a low reaction temperature. The present invention pertains to a silicon carbide production method comprising a step for sintering a composition that at least contains: silicon nanoparticles having an average particle diameter of less than 200 nm; and a carbon-based material.

公开(公告)号：US20220396065A1

公开(公告)日：2022-12-15

申请号：US17774718

申请日：2020-11-06

Applicant: TEIJIN LIMITED

Inventor： Masanori MAEDA ,  Yoshinori IKEDA ,  Masayuki CHOKAI ,  Takuya MURAKAMI

IPC: B32B38/00 ,  B32B5/16 ,  B32B5/30 ,  B32B7/12 ,  B32B18/00

Abstract: An object of the present invention is to provide a heat dissipation sheet having high thermal conductivity in the thickness direction. The present invention provides a heat dissipation sheet having a structure in which at least two thermally conductive insulation layers are laminated, wherein the lamination direction of the thermally conductive insulation layers is substantially perpendicular to the thickness direction of the heat dissipation sheet, and wherein for the entire cross-section perpendicular to the in-plane direction of the heat dissipation sheet, the thermally conductive insulation layer contains 75 to 97% by area of insulating particles, 3 to 25% by area of a binder resin, and 10% by area or less of voids.

公开(公告)号：US20220165457A1

公开(公告)日：2022-05-26

申请号：US17440893

申请日：2019-12-26

Applicant: TEIJIN LIMITED

Inventor： Masanori MAEDA ,  Yoshinori IKEDA ,  Masayuki CHOKAI ,  Takuya MURAKAMI

IPC: H01B17/60 ,  H01B3/12 ,  H01B19/00 ,  C04B35/583 ,  C04B35/634

Abstract: An object of the present invention is to provide an insulation sheet having high thermal conductivity in the in-plane direction.
The present invention provides an insulation sheet comprising insulating particles and a binder resin, wherein, for the entire cross-section of the sheet perpendicular to the in-plane direction, the insulation sheet contains 75 to 97% by area of the insulating particles, 3 to 25% by area of the binder resin, and 10% by area or less of the voids.

公开(公告)号：US20210238368A1

公开(公告)日：2021-08-05

申请号：US16972339

申请日：2019-06-04

Applicant: TEIJIN LIMITED

Inventor： Takaya MOYORI ,  Masayuki CHOKAI ,  Yoshinori IKEDA ,  Masanori MAEDA

IPC: C08J3/12 ,  C08J3/20 ,  C08G69/14 ,  C08K3/38 ,  C08K3/36 ,  C08K9/08 ,  C08G65/26 ,  B29C43/00 ,  B29C43/02 ,  C08J5/18

Abstract: A composite particle is provided having sufficient insulating properties and high thermal conductivity and also having an excellent handling property and moldability. In particular, a random-shaped composite particle is provided in which primary particles of inorganic filler are aggregated and the primary particles are coated with a thermoplastic resin, and a method for producing the composite particle, as well as a molded article and a method for producing the molded article, are also provided.

公开(公告)号：US20130298989A1

公开(公告)日：2013-11-14

申请号：US13846605

申请日：2013-03-18

Applicant: TEIJIN LIMITED

Inventor： Yuka TOMIZAWA ,  Yoshinori IKEDA ,  Tetsuya IMAMURA

IPC: H01L31/0376

CPC classification number: H01L31/03762 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02675 ,  H01L29/6675 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention comprises the steps (a)-(c) described below. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base.

Abstract translation: 提供一种半导体器件的制造方法。 还提供了：可以通过该方法获得的半导体器件; 以及可用于该方法的分散体。 本发明的半导体装置（500a）的制造方法包括下述步骤（a） - （c）。 （a）将包含掺杂颗粒的分散体施加到层或基底的特定部分。 （b）通过干燥所施加的分散体获得未烧结的掺杂剂注入层。 （c）通过用光照射未烧结的掺杂剂注入层，将层或基底的特定部分掺杂p型或n型掺杂剂，并烧结未烧结的掺杂剂注入层，从而获得掺杂剂注入层， 与层或基底集成。

公开(公告)号：US20230347636A1

公开(公告)日：2023-11-02

申请号：US18220343

申请日：2023-07-11

Applicant: TEIJIN LIMITED

Inventor： Junshi SOEDA ,  Yoshinori IKEDA

IPC: B32B27/32 ,  B32B7/04 ,  B32B9/04 ,  B32B15/085

CPC classification number: B32B27/325 ,  B32B7/04 ,  B32B9/045 ,  B32B15/085

Abstract: A composite of polymer member and inorganic substrate, a method of manufacturing the same, and a polymer member therefor are provided. A method for manufacturing a composite 210, 220 of polymer member and inorganic substrate includes: providing a composite 110, 120 of thermally modified polymer layer and inorganic substrate in which one or more thermally modified polymer layers 20, 21, 22 are adhered onto an inorganic substrate 10, and bonding a polymer member 30, 31, 32 to the inorganic substrate via the one or more thermally modified polymer layers 20, 21, 22.

公开(公告)号：US20220176684A1

公开(公告)日：2022-06-09

申请号：US17435893

申请日：2020-03-06

Applicant: TEIJIN LIMITED

Inventor： Junshi SOEDA ,  Yoshinori IKEDA

IPC: B32B27/32 ,  B32B7/04 ,  B32B9/04 ,  B32B15/085

Abstract: A composite of polymer member and inorganic substrate, a method of manufacturing the same, and a polymer member therefor are provided. A method for manufacturing a composite 210, 220 of polymer member and inorganic substrate includes: providing a composite 110, 120 of thermally modified polymer layer and inorganic substrate in which one or more thermally modified polymer layers 20, 21, 22 are adhered onto an inorganic substrate 10, and bonding a polymer member 30, 31, 32 to the inorganic substrate via the one or more thermally modified polymer layers 20, 21, 22.

公开(公告)号：US20160300717A1

公开(公告)日：2016-10-13

申请号：US15097672

申请日：2016-04-13

Applicant: TEIJIN LIMITED

Inventor： Yuka TOMIZAWA ,  Yoshinori IKEDA ,  Tetsuya Imamura

IPC: H01L21/02 ,  H01L31/18 ,  H01L29/66 ,  H01L31/068

CPC classification number: H01L31/03762 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02675 ,  H01L29/6675 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention includes the steps (a)-(c) described below. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base.

Abstract translation: 提供一种半导体器件的制造方法。 还提供了：可以通过该方法获得的半导体器件; 以及可用于该方法的分散体。 本发明的半导体装置（500a）的制造方法包括下述步骤（a） - （c）。 （a）将包含掺杂颗粒的分散体施加到层或基底的特定部分。 （b）通过干燥所施加的分散体获得未烧结的掺杂剂注入层。 （c）通过用光照射未烧结的掺杂剂注入层，将层或基底的特定部分掺杂p型或n型掺杂剂，并烧结未烧结的掺杂剂注入层，从而获得掺杂剂注入层， 与层或基底集成。