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公开(公告)号：US10971411B2
公开(公告)日：2021-04-06
申请号：US16154025
申请日：2018-10-08
Applicant: TEL Epion Inc.
Inventor： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC: H01J37/32 , H01L21/66 , H01L21/3065 , G05B19/418
Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.
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2.发明授权Apparatus and methods for implementing predicted systematic error correction in location specific processing 有权在位置特定处理中实现预测的系统误差校正的装置和方法公开(公告)号：US09123505B1
公开(公告)日：2015-09-01
申请号：US14492819
申请日：2014-09-22
Applicant: TEL Epion Inc.
Inventor： Vincent Lagana-Gizzo , Noel Russell , Joshua LaRose , Soo Doo Chae
IPC: H01J37/304 , H01J37/317 , H01J37/30
CPC classification number: H01J37/304 , H01J37/3005 , H01J37/3053 , H01J2237/08 , H01J2237/30455 , H01J2237/3151 , H01J2237/317
Abstract: A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.
Abstract translation: 描述了使用气体簇离子束（GCIB）修饰工件的上层的方法。 该方法包括收集与工件的上层相关的参数数据，以及通过使用参数数据确定用于将GCIB应用于上层以改变测量属性的初始简档的预测的系统误差响应。 另外，该方法包括至少部分地基于预测的系统误差响应和参数数据来识别所测量的属性的目标轮廓，将GCIB引向工件的上层，以及空间调制GCIB的应用属性 ，作为工件上层位置的函数，以达到测量属性的目标轮廓。
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公开(公告)号：US10256095B2
公开(公告)日：2019-04-09
申请号：US15266639
申请日：2016-09-15
Applicant: TEL Epion Inc.
Inventor： Soo Doo Chae , Noel Russell , Joshua LaRose , Nicholas Joy , Luis Fernandez , Allen J. Leith , Steven P. Caliendo , Yan Shao , Vincent Lagana-Gizzo
IPC: H01L21/02 , H01L21/66 , G05B19/406 , H01L21/265 , H01L21/263 , H01J37/304
Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.
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Patent Agency Ranking
公开(公告)号：US20190043766A1
公开(公告)日：2019-02-07
申请号：US16154025
申请日：2018-10-08
Applicant: TEL Epion Inc.
Inventor： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC: H01L21/66 , H01J37/32 , G05B19/418 , H01L21/3065
Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.
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公开(公告)号：US20170053843A1
公开(公告)日：2017-02-23
申请号：US15242376
申请日：2016-08-19
Applicant: TEL Epion Inc.
Inventor： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC: H01L21/66 , G05B23/02 , G05B19/19 , G05B19/406 , H01J37/32 , H01L21/3065
CPC classification number: H01L22/20 , G05B19/41875 , G05B2219/32216 , H01J37/32009 , H01J37/3244 , H01J37/32935 , H01J37/3299 , H01J2237/334 , H01L21/3065 , H01L22/12 , Y02P90/22
Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.
Abstract translation: 描述用于对工件进行校正处理的系统和方法。 所述系统和方法包括从第一源接收第一组参数数据，所述第一组在诊断上与微电子工件的至少第一部分相关，以及从不同于诊断相关的第一源的第二源接收第二组参数数据 到微电子工件的至少第二部分。 此后，产生校正过程，并且通过使用第一组参数数据和第二组参数数据的组合将校正过程应用于目标区域来处理微电子工件的目标区域。
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公开(公告)号：US10096527B2
公开(公告)日：2018-10-09
申请号：US15242376
申请日：2016-08-19
Applicant: TEL Epion Inc.
Inventor： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC: H01L21/66 , H01J37/32 , H01L21/3065 , G05B19/418
Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.
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7.发明申请METHOD FOR HIGH THROUGHPUT USING BEAM SCAN SIZE AND BEAM POSITION IN BEAM PROCESSING SYSTEM 审中-公开光束加工系统中使用光束尺寸和光束位置的高通量的方法公开(公告)号：US20170077001A1
公开(公告)日：2017-03-16
申请号：US15266639
申请日：2016-09-15
Applicant: TEL Epion Inc.
Inventor： Soo Doo Chae , Noel Russell , Joshua LaRose , Nicholas Joy , Luis Fernandez , Allen J. Leith , Steven P. Caliendo , Yan Shao , Vincent Lagana-Gizzo
IPC: H01L21/66 , G05B19/406 , H01L21/263
CPC classification number: H01L22/20 , G05B19/406 , G05B2219/40624 , G05B2219/45031 , H01J37/304 , H01J2237/30483 , H01J2237/31 , H01L22/12
Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.
Abstract translation: 描述用于执行工件的位置特定处理的系统和方法。 该方法包括将微电子工件放置在光束处理系统中，为小于微电子工件的尺寸的光束扫描图案选择光束扫描尺寸，产生处理光束，以及通过照射来处理微电子工件的目标区域 沿着光束扫描图案的处理光束到被选择用于处理微电子工件的光束扫描尺寸内的目标区域上。
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8.发明申请公开(公告)号：US20150243476A1
公开(公告)日：2015-08-27
申请号：US14492819
申请日：2014-09-22
Applicant: TEL Epion Inc.
Inventor： Vincent Lagana-Gizzo , Noel Russell , Joshua LaRose , Soo Doo Chae
IPC: H01J37/304 , H01J37/30
CPC classification number: H01J37/304 , H01J37/3005 , H01J37/3053 , H01J2237/08 , H01J2237/30455 , H01J2237/3151 , H01J2237/317
Abstract: A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.
Abstract translation: 描述了使用气体簇离子束（GCIB）修饰工件的上层的方法。 该方法包括收集与工件的上层相关的参数数据，以及通过使用参数数据确定用于将GCIB应用于上层以改变测量属性的初始简档的预测的系统误差响应。 另外，该方法包括至少部分地基于预测的系统误差响应和参数数据来识别所测量的属性的目标轮廓，将GCIB引向工件的上层，以及空间调制GCIB的应用属性 ，作为工件上层位置的函数，以达到测量属性的目标轮廓。
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