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公开(公告)号:US20240113611A1
公开(公告)日:2024-04-04
申请号:US17956100
申请日:2022-09-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Maik Peter KAUFMANN , Stefan HERZER , Michael LUEDERS
CPC classification number: H02M1/0029 , H02M3/1584 , H03K17/163 , H03K2217/0063 , H03K2217/0072
Abstract: A circuit includes a half-bridge circuit is configured to provide a switching voltage responsive to respective high-side and low-side drive signals. High-side slew control circuitry is configured to provide a high-side slew-compensated control signal responsive to a high-side enable signal and a slew current signal representative of a slew rate at a switching output. A high-side driver is configured to provide the high-side drive signal responsive to the high-side slew-compensated control signal. Low-side slew control circuitry is configured to provide a low-side slew-compensated drive signal responsive to a low-side enable signal and the slew current signal. A low-side driver is configured to provide the low-side drive signal responsive to the low-side slew-compensated control signal. A capacitor is coupled between the high-side and low-side slew control circuitry and is configured to convert the slew rate to the slew current signal.
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公开(公告)号:US20190207590A1
公开(公告)日:2019-07-04
申请号:US15859429
申请日:2017-12-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Michael LUEDERS , Johan STRYDOM
CPC classification number: H03K3/01 , H01L27/0266 , H01L27/0605 , H01L29/2003 , H03K5/24 , H03K17/08
Abstract: In some examples, a system comprises a bi-directional gallium nitride (GaN) device including first and second switches and a substrate, the first switch including a first gate and a first source, the second switch including a second gate and a second source, and the substrate shared between the first and second switches. The system include a third switch coupled to the first source and the substrate. The system includes a fourth switch coupled to the second source and the substrate and a comparator having inputs coupled to the first and second sources and outputs coupled to the third and fourth switches.
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公开(公告)号:US20180294710A1
公开(公告)日:2018-10-11
申请号:US15716647
申请日:2017-09-27
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sujan K. MANOHAR , Shailendra BARANWAL , Jeffrey MORRONI , Michael LUEDERS , Yogesh RAMADASS
Abstract: A system includes a high side transistor switch coupled to a first voltage node and a low side transistor switch coupled to the high side transistor switch at a switch node. The system further includes a unidirectional decoupling capacitor circuit including a capacitive component. The unidirectional decoupling capacitor circuit is coupled between the first voltage node and a common potential. Responsive to a voltage on the first voltage node being more than a threshold greater than an input voltage to the first voltage node, the unidirectional decoupling capacitor circuit is configured to sink current from the first voltage node to the capacitive component. The capacitive component can therefore be charged, with the charge used to subsequently power a load.
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公开(公告)号:US20240222207A1
公开(公告)日:2024-07-04
申请号:US18091349
申请日:2022-12-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Michael LUEDERS , Giacomo CALABRESE , Jonathan Almeria NOQUIL
CPC classification number: H01L23/13 , G02B6/12004 , H01F27/266 , H01F27/2804 , H01L21/4857 , H01L23/49822 , H01L23/49838 , H01L25/16 , H01L28/10 , H01F2027/2809 , H01L23/49894
Abstract: In examples, a packaged integrated circuit (IC) comprises a package substrate having opposite first and second surfaces and including metal interconnects surrounded by an insulation material. The package substrate includes a depression region that extends from the first surface, and the depression region includes a material different from the insulation material and the metal interconnects. The packaged IC also comprises a semiconductor die on part of the first surface adjacent to the depression region. The semiconductor die includes circuitry coupled to the metal interconnects. The packaged IC also comprises a mold compound covering the semiconductor die and the depression region.
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公开(公告)号:US20240313656A1
公开(公告)日:2024-09-19
申请号:US18184913
申请日:2023-03-16
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Saad PERVAIZ , Johan STRYDOM , Michael LUEDERS , Laszlo BALOGH
CPC classification number: H02M3/33507 , H02M1/08
Abstract: An apparatus includes: a first transistor coupled between a primary-side terminal and a bias terminal, the first transistor having a first control terminal; a second transistor coupled between the bias terminal and a ground terminal, the second transistor having a second control terminal; and a control circuit having a control input, a reference input, and first and second control outputs, the control input coupled to the bias terminal, the first control output coupled to the first control terminal, the second control output coupled to the second control terminal, and the control circuit configured to provide first and second control signals having a same switching frequency at the respective first and second control outputs responsive to a first voltage at the control input and a second voltage at the reference input.
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