公开(公告)号：US12159798B2

公开(公告)日：2024-12-03

申请号：US17298768

申请日：2019-11-19

Applicant: Tokyo Electron Limited

Inventor： Akira Takahashi ,  Atsushi Kawabe

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/68

Abstract: Provided is a transfer detection method for use in a substrate processing apparatus including a transfer arm, which has a plurality of substrate holders and is configured to transfer a plurality of substrates to a plurality of stages between a first chamber and a second chamber adjacent to the first chamber by using the plurality of substrate holders, and an optical sensor provided in a vicinity of an opening via which the first and second chambers are in communication with each other, the method including: projecting a light beam having a horizontal optical axis parallel to the opening to a position through which the substrates held by the plurality of substrate holders pass; and determining at least one of a state of the substrates on the substrate holders and a state of the transfer arm, in response to a detection result of the light beam projected from the optical sensor.

公开(公告)号：US12142462B2

公开(公告)日：2024-11-12

申请号：US18641911

申请日：2024-04-22

Applicant: Tokyo Electron Limited

Inventor： Shinsuke Oka ,  Akira Takahashi ,  Daisuke Tamura ,  Tsubasa Shimomura

IPC: H01J37/32

Abstract: With respect to a method of reducing leakage of a heat transfer gas, the method includes mounting an edge ring on a main body including an electrostatic chuck; attracting the edge ring to the electrostatic chuck; increasing a temperature of the edge ring; decreasing the temperature of the edge ring; and repeating the increasing of the temperature and the decreasing of the temperature a plurality of times.

公开(公告)号：US09312105B2

公开(公告)日：2016-04-12

申请号：US14730394

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira Takahashi ,  Kei Nakayama ,  Yoshiki Igarashi ,  Shin Hirotsu

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01J37/32165 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/76802

Abstract: Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON.

Abstract translation: 公开了一种用于蚀刻加工对象物体的绝缘膜的方法。 该方法包括：在第一项中，周期性地切换高频功率的ON和OFF，以激发含有碳氟化合物的处理气体，并将其供应到等离子体处理装置的处理容器中; 并且在第一项之后的第二项中，将高频功率设定为连续接通，以激励供给到处理容器中的处理气体。 在由高频接通的术语和第一项中高频功率关闭的术语组成的一个周期中，第二项长于高频功率导通的术语。