公开(公告)号：US09779954B2

公开(公告)日：2017-10-03

申请号：US14557659

申请日：2014-12-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinori Kitamura ,  Eiji Suzuki

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32449 ,  H01L21/02057 ,  H01L21/31116

Abstract: Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.

公开(公告)号：US09502537B2

公开(公告)日：2016-11-22

申请号：US14469784

申请日：2014-08-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinori Kitamura ,  Hiroto Ohtake ,  Eiji Suzuki

IPC: H01L29/66 ,  H01J37/32 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L29/66795 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/3065 ,  H01L21/31116

Abstract: Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.

Abstract translation: 提供了一种从包括由氧化硅形成的第一区域和由硅形成的第二区域的工件中选择性地去除第一区域的方法。 该方法执行多个序列。 每个序列包括：通过在容纳工件的处理容器内产生含有氢，氮和氟的处理气体的等离子体来形成变性区域，以使第一区域的一部分变性，并除去加工中的变性区域 容器。 此外，在多个序列中的第一序列之后的预定数量的序列之后的序列还包括在形成变性区域之前将工件暴露于在处理容器内产生的还原气体的等离子体。

公开(公告)号：US20140332372A1

公开(公告)日：2014-11-13

申请号：US14271628

申请日：2014-05-07

Applicant: Tokyo Electron Limited

Inventor： Tomiko Kamada ,  Akinori Kitamura ,  Hiroto Ohtake ,  Yutaka Osada ,  Yuji Otsuka ,  Masayuki Kohno ,  Yusuke Takino ,  Eiji Suzuki

IPC: C23F4/02

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J2237/334 ,  H01L21/02057 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.

Abstract translation: 可以以高均匀性进行各向同性蚀刻工艺。 蚀刻含有硅的蚀刻对象层的等离子体蚀刻方法包括：在处理室中准备具有蚀刻对象层的处理对象物体; 通过产生含有碳氟化合物气体或氟代烃气体但不含氧的第一处理气体的等离子体，去除蚀刻目标层的表面上的氧化物膜; 去除通过产生不含氧的第二处理气体的等离子体去除氧化膜时产生的碳基反应产物; 并且通过利用微波产生含有碳氟化合物气体或氟代烃气体的第三处理气体的等离子体，而不将高频偏置功率施加到用作安装工作台的下部电极，而不将高频偏置功率施加到蚀刻目标层。

公开(公告)号：US09373520B2

公开(公告)日：2016-06-21

申请号：US14603579

申请日：2015-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota Yoshimura ,  Eiji Suzuki ,  Tomiko Kamada ,  Hiroto Ohtake

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/67 ,  H01L27/115 ,  H01J37/32

CPC classification number: H01L21/311 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32449 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L27/11524

Abstract: In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.

Abstract translation: 在本发明的一个实施例中，提供了一种蚀刻多层膜的方法，该多层膜通过层压具有第一介电常数的第一层和具有第二介电常数的第二层的多个交替层而形成。 该方法包括（a）多层膜蚀刻步骤，其中将蚀刻剂气体供应到处理室中，并且微波被供应到处理室中以激发蚀刻剂气体的等离子体; 和（b）抗蚀剂掩模还原步骤，其中将含氧气体和氟碳基气体供应到处理室，并且将微波供应到处理室中以激发含氧气体和碳氟化合物的等离子体 的气体。 在该方法中，交替重复步骤（a）和（b）。

公开(公告)号：US10121674B2

公开(公告)日：2018-11-06

申请号：US15654947

申请日：2017-07-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinori Kitamura ,  Eiji Suzuki

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32

Abstract: Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.

公开(公告)号：US09412607B2

公开(公告)日：2016-08-09

申请号：US14271628

申请日：2014-05-07

Applicant: Tokyo Electron Limited

Inventor： Tomiko Kamada ,  Akinori Kitamura ,  Hiroto Ohtake ,  Yutaka Osada ,  Yuji Otsuka ,  Masayuki Kohno ,  Yusuke Takino ,  Eiji Suzuki

IPC: H01L21/3065 ,  H01L29/66 ,  H01J37/32 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J2237/334 ,  H01L21/02057 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.

Abstract translation: 可以以高均匀性进行各向同性蚀刻工艺。 蚀刻含有硅的蚀刻对象层的等离子体蚀刻方法包括：在处理室中准备具有蚀刻对象层的处理对象物体; 通过产生含有碳氟化合物气体或氟代烃气体但不含氧的第一处理气体的等离子体，去除蚀刻目标层的表面上的氧化物膜; 去除通过产生不含氧的第二处理气体的等离子体去除氧化膜时产生的碳基反应产物; 并且通过利用微波产生含有碳氟化合物气体或氟代烃气体的第三处理气体的等离子体，而不将高频偏置功率施加到用作安装工作台的下部电极，而不将高频偏置功率施加到蚀刻目标层。