公开(公告)号：US20150287618A1

公开(公告)日：2015-10-08

申请号：US14747396

申请日：2015-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroie MATSUMOTO ,  Kazuto OGAWA

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/8221 ,  H01L27/11556

Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.

Abstract translation: 提供了一种等离子体处理方法和等离子体处理装置，其可以在蚀刻停止层的表面上形成保护膜，并且在蚀刻氧化物层时抑制孔的堵塞。 等离子体处理方法在包括氧化物层，多个由钨制成的多个蚀刻停止层和掩​​模层的多层膜中形成具有不同深度的多个孔。 等离子体处理方法包括蚀刻工艺，其中提供处理气体以产生等离子体，使得从氧化物层的顶表面到多个蚀刻停止层进行蚀刻，以便在氧化物层中形成具有不同深度的孔 。 这里，处理气体包括碳氟化合物系气体，稀有气体，氧气和氮气。

公开(公告)号：US20150228500A1

公开(公告)日：2015-08-13

申请号：US14695825

申请日：2015-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuto OGAWA ,  Kazuki NARISHIGE ,  Takanori SATO

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/0332 ,  H01L21/31144

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

公开(公告)号：US20150037982A1

公开(公告)日：2015-02-05

申请号：US14447881

申请日：2014-07-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuto OGAWA ,  Kazuki NARISHIGE ,  Takanori SATO

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/0332 ,  H01L21/31144

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Abstract translation: 在半导体器件制造方法中，在等离子体处理装置的处理室中制备包括形成在多层膜上的多层膜和掩模的目标物体。 多层膜通过交替层叠氧化硅膜和氮化硅膜而形成。 通过向等离子体处理装置的处理室中供给含有氢气，溴化氢气体，三氟化氮气体和烃气体，氟代烃气体和碳氟化合物气体中的至少一种的处理气体来蚀刻多层膜，并产生处理等离子体 处理室内的气体。

公开(公告)号：US20140120732A1

公开(公告)日：2014-05-01

申请号：US14064293

申请日：2013-10-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroie MATSUMOTO ,  Kazuto OGAWA

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/8221 ,  H01L27/11556

Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.

Abstract translation: 提供了一种等离子体处理方法和等离子体处理装置，其可以在蚀刻停止层的表面上形成保护膜，并且在蚀刻氧化物层时抑制孔的堵塞。 等离子体处理方法在包括氧化物层，多个由钨制成的多个蚀刻停止层和掩​​模层的多层膜中形成具有不同深度的多个孔。 等离子体处理方法包括蚀刻工艺，其中提供处理气体以产生等离子体，使得从氧化物层的顶表面到多个蚀刻停止层进行蚀刻，以便在氧化物层中形成具有不同深度的孔 。 这里，处理气体包括碳氟化合物系气体，稀有气体，氧气和氮气。