公开(公告)号：US20150228500A1

公开(公告)日：2015-08-13

申请号：US14695825

申请日：2015-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuto OGAWA ,  Kazuki NARISHIGE ,  Takanori SATO

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/0332 ,  H01L21/31144

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

公开(公告)号：US20210265170A1

公开(公告)日：2021-08-26

申请号：US17179436

申请日：2021-02-19

Applicant: Tokyo Electron Limited

Inventor： Seiichi WATANABE ,  Kazuki NARISHIGE ,  Xinhe Jerry LIM ,  Jianfeng XU ,  Yi Hao NG ,  Zhenkang Max LIANG ,  Yujun Nicholas LOO ,  Chiew Wah YAP ,  Bin ZHAO ,  Chai Jin CHUA ,  Takehito WATANABE ,  Koji KAWAMURA ,  Kenji KOMATSU ,  Li JIN ,  Wee Teck TAN ,  Dali LIU

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/768 ,  H01J37/32

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

公开(公告)号：US20150303069A1

公开(公告)日：2015-10-22

申请号：US14409053

申请日：2013-07-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki NARISHIGE ,  Takanori SATO ,  Manabu SATO

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67109 ,  H01L27/11556 ,  H01L27/11582

Abstract: Plasma etching is performed while suppressing bowing during etching of a multi-layer film. The plasma etching is performed multiple times using a processing gas containing HBr gas and C4F8 gas, and the etching gradually forms recesses from a SiN layer through a laminated film. By adding a gas containing boron to the processing gas during the etching at a predetermined timing and at a predetermined flow ratio while etching the laminated film, a protective film is formed on side walls of the SiN layer that are exposed to the recess.

Abstract translation: 在蚀刻多层膜的同时抑制弯曲的同时执行等离子体蚀刻。 使用含有HBr气体和C 4 F 8气体的处理气体进行多次等离子体蚀刻，蚀刻通过层叠膜从SiN层逐渐形成凹部。 通过在刻蚀层叠膜的同时以预定的时间和预定的流量比在蚀刻期间向处理气体中加入含硼的气体，在SiN层的暴露于凹部的侧壁上形成保护膜。

公开(公告)号：US20150235862A1

公开(公告)日：2015-08-20

申请号：US14623006

申请日：2015-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rui TAKAHASHI ,  Ryuuu ISHITA ,  Kazuki NARISHIGE

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/32136 ,  H01J37/32091 ,  H01J37/32165 ,  H01J2237/334 ,  H01L21/02123 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32135 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/11582

Abstract: A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.

Abstract translation: 提供了使用掩模蚀刻多层膜的半导体器件制造方法。 该方法包括（a）向处理室供应含有氢，溴化氢，三氟化氮和至少一种烃，碳氟化合物和氟代烃的第一气体，并激发第一气体以从多层膜的顶表面上蚀刻多层膜 到所述多层膜的堆叠方向的预定位置; 和（b）提供基本不含有溴化氢并且含有氢和三氟化氮的第二气体和至少一种氢化三氟化碳，碳氟化合物和氟代烃，并且激发第二气体以从第二气体的预定位置 该多层膜到达蚀刻停止层的顶表面。

公开(公告)号：US20150037982A1

公开(公告)日：2015-02-05

申请号：US14447881

申请日：2014-07-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuto OGAWA ,  Kazuki NARISHIGE ,  Takanori SATO

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/0332 ,  H01L21/31144

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Abstract translation: 在半导体器件制造方法中，在等离子体处理装置的处理室中制备包括形成在多层膜上的多层膜和掩模的目标物体。 多层膜通过交替层叠氧化硅膜和氮化硅膜而形成。 通过向等离子体处理装置的处理室中供给含有氢气，溴化氢气体，三氟化氮气体和烃气体，氟代烃气体和碳氟化合物气体中的至少一种的处理气体来蚀刻多层膜，并产生处理等离子体 处理室内的气体。