公开(公告)号：US20210028356A1

公开(公告)日：2021-01-28

申请号：US17040483

申请日：2019-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ken ANDO ,  Hiroki MAEHARA ,  Jun SATO ,  Kiyoshi MAEDA ,  Shigeru TAHARA

IPC: H01L43/12 ,  H01L43/08

Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

公开(公告)号：US20230386787A1

公开(公告)日：2023-11-30

申请号：US18032786

申请日：2021-10-05

Applicant: Tokyo Electron Limited

Inventor： Atsutoshi INOKUCHI ,  Yasuhiko SAITO ,  Kiyoshi MAEDA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32137 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334

Abstract: A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from the process gas under a first plasma generation condition, (c) performing a plasma processing on the workpiece with second plasma generated from the process gas under a second plasma generation condition that is different from the first plasma generation condition in a radio-frequency power condition and a processing time, and is the same as the first plasma generation condition in other conditions, and (d) repeating (b) and (c).

公开(公告)号：US20180337025A1

公开(公告)日：2018-11-22

申请号：US15775218

申请日：2016-11-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro UMEZAWA ,  Jun SATO ,  Kiyoshi MAEDA ,  Mitsunori OHATA ,  Kazuya MATSUMOTO

IPC: H01J37/32 ,  C23F4/00 ,  H01L43/12 ,  H01F41/34 ,  H01F10/32

Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(φ, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value φ of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.