公开(公告)号：US20140377960A1

公开(公告)日：2014-12-25

申请号：US14480109

申请日：2014-09-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke KOIWA

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/31138 ,  H01J37/32449 ,  H01L21/31122 ,  H01L21/31144

Abstract: In a plasma etching method of performing a plasma etching on an amorphous carbon layer of a substrate to be processed by using an inorganic film as a mask, the substrate being mounted in a processing chamber, the plasma etching on the amorphous carbon layer is performed by using O2 gas as a processing gas and the O2 gas to flow in the processing chamber such that a residence time of the O2 gas becomes 0.37 msec or less. The amorphous carbon layer is used as an etching mask of an etching target film formed on the substrate. The plasma etching is performed by using the O2 gas only.

Abstract translation: 在通过使用无机膜作为掩模对被处理基板的无定形碳层进行等离子体蚀刻的等离子体蚀刻方法中，将基板安装在处理室中，对非晶碳层进行等离子体蚀刻，由 使用O 2气体作为处理气体，并且O 2气体在处理室中流动，使得O 2气体的停留时间变为0.37msec以下。 无定形碳层用作形成在基板上的蚀刻对象膜的蚀刻掩模。 仅通过使用O 2气体进行等离子体蚀刻。

公开(公告)号：US20160293440A1

公开(公告)日：2016-10-06

申请号：US15090726

申请日：2016-04-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu NAGATOMO ,  Ryuuu ISHITA ,  Daisuke TAMURA ,  Kousuke KOIWA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/31 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/67109 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.

Abstract translation: 提供了一种用于同时蚀刻工件的第一和第二区域的蚀刻方法。 第一区域具有通过交替层叠氧化硅膜和氮化硅膜而构成的多层膜，第二区域具有比第一区域中的氧化硅膜的膜厚大的氧化硅膜。 在工件上设置掩模以至少部分地暴露第一和第二区域中的每一个。 在蚀刻方法中，在等离子体处理装置的处理容器内产生含有碳氟化合物气体，氢氟烃气体和氧气的第一处理气体的等离子体。 随后，在处理容器内产生含有碳氟化合物气体，氢氟烃气体，氧气和含卤素气体的第二处理气体的等离子体。 随后，在处理容器内产生含有氧气的第三处理气体的等离子体。