公开(公告)号：US20160293440A1

公开(公告)日：2016-10-06

申请号：US15090726

申请日：2016-04-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu NAGATOMO ,  Ryuuu ISHITA ,  Daisuke TAMURA ,  Kousuke KOIWA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/31 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/67109 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.

Abstract translation: 提供了一种用于同时蚀刻工件的第一和第二区域的蚀刻方法。 第一区域具有通过交替层叠氧化硅膜和氮化硅膜而构成的多层膜，第二区域具有比第一区域中的氧化硅膜的膜厚大的氧化硅膜。 在工件上设置掩模以至少部分地暴露第一和第二区域中的每一个。 在蚀刻方法中，在等离子体处理装置的处理容器内产生含有碳氟化合物气体，氢氟烃气体和氧气的第一处理气体的等离子体。 随后，在处理容器内产生含有碳氟化合物气体，氢氟烃气体，氧气和含卤素气体的第二处理气体的等离子体。 随后，在处理容器内产生含有氧气的第三处理气体的等离子体。

公开(公告)号：US20150235862A1

公开(公告)日：2015-08-20

申请号：US14623006

申请日：2015-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rui TAKAHASHI ,  Ryuuu ISHITA ,  Kazuki NARISHIGE

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/32136 ,  H01J37/32091 ,  H01J37/32165 ,  H01J2237/334 ,  H01L21/02123 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32135 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/11582

Abstract: A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.

Abstract translation: 提供了使用掩模蚀刻多层膜的半导体器件制造方法。 该方法包括（a）向处理室供应含有氢，溴化氢，三氟化氮和至少一种烃，碳氟化合物和氟代烃的第一气体，并激发第一气体以从多层膜的顶表面上蚀刻多层膜 到所述多层膜的堆叠方向的预定位置; 和（b）提供基本不含有溴化氢并且含有氢和三氟化氮的第二气体和至少一种氢化三氟化碳，碳氟化合物和氟代烃，并且激发第二气体以从第二气体的预定位置 该多层膜到达蚀刻停止层的顶表面。