公开(公告)号：US20230340666A1

公开(公告)日：2023-10-26

申请号：US18135917

申请日：2023-04-18

Applicant: Tokyo Electron Limited

Inventor： Kuniyasu SAKASHITA ,  Tosihiko JO

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/45502 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/46

Abstract: A substrate processing apparatus includes: an inner cylinder having a first region formed inside the inner cylinder to accommodate a substrate; an outer cylinder provided outside the inner cylinder with a second region interposed between the inner cylinder and the outer cylinder and including an exhaust port formed in an end portion of a sidewall of the outer cylinder; a nozzle configured to discharge a gas to the first region; and a gas flow regulator including a plurality of slits provided from an upstream side toward a downstream side in a flow direction of the gas in a flow path of the gas from the first region to the exhaust port.

公开(公告)号：US20180179630A1

公开(公告)日：2018-06-28

申请号：US15841084

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Kuniyasu SAKASHITA ,  Shigeru NAKAJIMA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4583 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67303 ,  H01L21/67309

Abstract: A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.

公开(公告)号：US20250167009A1

公开(公告)日：2025-05-22

申请号：US19034742

申请日：2025-01-23

Applicant: Tokyo Electron Limited

Inventor： Kazuya TAKAHASHI ,  Kuniyasu SAKASHITA ,  Atsushi ENDO ,  Junya KOJIMA

IPC: H01L21/67 ,  C23C16/455

Abstract: A substrate processing apparatus includes: a processing container that accommodates a plurality of substrates arranged in multiple tiers; a processing gas supply pipe that extends along an arrangement direction of the plurality of substrates and supplies a processing gas into the processing container; and a pair of inert gas supply pipes that is provided at positions sandwiching the processing gas supply pipe therebetween along a circumferential direction of the plurality of substrates while extending along the arrangement direction, and supply an inert gas into the processing container. The pair of inert gas supply pipes are configured to inject the inert gas toward an inner surface of a sidewall of the processing container, so that the inner surface forms a flow of the inert gas in the circumferential direction of the plurality of substrates.

公开(公告)号：US20220081775A1

公开(公告)日：2022-03-17

申请号：US17472959

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Reita IGARASHI ,  Kuniyasu SAKASHITA

IPC: C23C16/52 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

公开(公告)号：US20220081773A1

公开(公告)日：2022-03-17

申请号：US17472920

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Kuniyasu SAKASHITA

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

公开(公告)号：US20210395893A1

公开(公告)日：2021-12-23

申请号：US17304119

申请日：2021-06-15

Applicant: Tokyo Electron Limited

Inventor： Kuniyasu SAKASHITA ,  Satoru OGAWA

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02

Abstract: A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, includes a plurality of first gas holes provided at intervals in a longitudinal direction; and a second gas hole provided at a tip of the gas nozzle and oriented toward a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.