公开(公告)号：US09034698B2

公开(公告)日：2015-05-19

申请号：US14464978

申请日：2014-08-21

Applicant: Tokyo Electron Limited

Inventor： Toshihisa Ozu ,  Shota Yoshimura ,  Hiroto Ohtake ,  Kosuke Kariu ,  Takashi Tsukamoto

IPC: H01L21/332 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/4941 ,  H01L21/32137 ,  H01L29/66795

Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Abstract translation: 一种半导体器件制造方法，包括：在处理室内激发含有HBr气体和Cl 2气体的处理气体，所述处理室容纳包含基板的目标物体，所述基板由硅构成，所述区域从所述基板突出并配置成形成间隙， 形成为覆盖所述区域的金属层，形成在所述金属层上的多晶硅层，以及形成在所述多晶硅层上的有机掩模。 以相对于处理气体中的HBr气体的流量为约5％以上至约10％以下的流量供给Cl 2气体。

公开(公告)号：US09570312B2

公开(公告)日：2017-02-14

申请号：US14399360

申请日：2013-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryohei Takeda ,  Mitsuhiro Tomura ,  Akinori Kitamura ,  Shinji Higashitsutsumi ,  Hiroto Ohtake ,  Takashi Tsukamoto

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32192 ,  H01L21/02115 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069

Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.

Abstract translation: 提供了一种能够有利地形成蚀刻多层膜时使用的掩模的等离子体蚀刻方法。 用于蚀刻硼掺杂的无定形碳的等离子体蚀刻方法包括使用包含氯气和氧气的气体混合物的等离子体，并将安装级（3）的温度设定为100℃以上。

公开(公告)号：US10224220B2

公开(公告)日：2019-03-05

申请号：US14287537

申请日：2014-05-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa Ozu ,  Naoki Matsumoto ,  Takashi Tsukamoto ,  Kazuto Takai

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

公开(公告)号：US20150056773A1

公开(公告)日：2015-02-26

申请号：US14464978

申请日：2014-08-21

Applicant: Tokyo Electron Limited

Inventor： Toshihisa Ozu ,  Shota Yoshimura ,  Hiroto Ohtake ,  Kosuke Kariu ,  Takashi Tsukamoto

IPC: H01L29/49 ,  H01L29/66

CPC classification number: H01L29/4941 ,  H01L21/32137 ,  H01L29/66795

Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Abstract translation: 一种半导体器件制造方法，包括：在处理室内激发含有HBr气体和Cl 2气体的处理气体，所述处理室容纳包含基板的目标物体，所述基板由硅构成，所述区域从所述基板突出并配置成形成间隙， 形成为覆盖所述区域的金属层，形成在所述金属层上的多晶硅层，以及形成在所述多晶硅层上的有机掩模。 以相对于处理气体中的HBr气体的流量为约5％以上至约10％以下的流量供给Cl 2气体。

公开(公告)号：US20150099366A1

公开(公告)日：2015-04-09

申请号：US14399360

申请日：2013-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryohei Takeda ,  Mitsuhiro Tomura ,  Akinori Kitamura ,  Shinji Higashitsutsumi ,  Hiroto Ohtake ,  Takashi Tsukamoto

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32192 ,  H01L21/02115 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069

Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.

Abstract translation: 提供了一种能够有利地形成蚀刻多层膜时使用的掩模的等离子体蚀刻方法。 用于蚀刻硼掺杂的无定形碳的等离子体蚀刻方法包括使用包含氯气和氧气的气体混合物的等离子体，并将安装级（3）的温度设定为100℃以上。