公开(公告)号：US20210358779A1

公开(公告)日：2021-11-18

申请号：US17386645

申请日：2021-07-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/3065 ,  H01J37/32

Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

公开(公告)号：US20210280449A1

公开(公告)日：2021-09-09

申请号：US17183625

申请日：2021-02-24

Applicant: Tokyo Electron Limited

Inventor： Takehiro UEDA

IPC: H01L21/683 ,  H01J37/32

Abstract: A stage to be disposed in a chamber of a plasma processing apparatus is provided. The stage includes a chuck with a mounting portion for a substrate and a first hole through the mounting portion. The stage includes a base disposed beneath the chuck, the base including a second hole through the base, and the second hole communicating with the first hole. The base includes a first cylindrical liner disposed in the second hole, the first cylindrical liner having a relative permittivity of 5 or less.

公开(公告)号：US20190172688A1

公开(公告)日：2019-06-06

申请号：US16206100

申请日：2018-11-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA

IPC: H01J37/32 ,  H01L21/683

Abstract: A support assembly includes an electrostatic chuck, a lower electrode, one or more conductive members and a ring-shaped insulating member. The lower electrode has a chuck support surface which supports the electrostatic chuck and a ring support surface which supports an edge ring and surrounds the chuck support surface. A contact electrode is formed on the ring support surface. The conductive members electrically connect the contact electrode and the edge ring. The insulating member is interposed between the ring support surface of the lower electrode and the edge ring while enclosing the conductive members.

公开(公告)号：US20220216035A1

公开(公告)日：2022-07-07

申请号：US17703503

申请日：2022-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA ,  Jun HIROSE

IPC: H01J37/32

Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

公开(公告)号：US20190252218A1

公开(公告)日：2019-08-15

申请号：US16273765

申请日：2019-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67126 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/3065 ,  H01L21/68742 ,  H01L21/68764

Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

公开(公告)号：US20180315640A1

公开(公告)日：2018-11-01

申请号：US15961381

申请日：2018-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA ,  Kenji NAGAI

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A plasma processing apparatus includes a first mounting table on which a target object to be processed is mounted, a second mounting table provided around the first mounting table, and an elevation mechanism. A focus ring is mounted on the second mounting table. The second mounting table has therein a temperature control mechanism. The elevation mechanism is configured to vertically move the second mounting table.

公开(公告)号：US20150083332A1

公开(公告)日：2015-03-26

申请号：US14561785

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KIKUCHI ,  Satoshi KAYAMORI ,  Shinya SHIMA ,  Yuichiro SAKAMOTO ,  Kimihiro HIGUCHI ,  Kaoru OOHASHI ,  Takehiro UEDA ,  Munehiro SHIBUYA ,  Tadashi GONDAI

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract translation: 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理的基板的表面发生。

公开(公告)号：US20230197501A1

公开(公告)日：2023-06-22

申请号：US18108391

申请日：2023-02-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA ,  Kenji Nagai

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/68764 ,  H01L21/67069 ,  H01L21/67259 ,  H01J37/32642 ,  H01J37/32513 ,  H01J37/32715 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68735 ,  H01L21/67248 ,  H01J2237/3344

Abstract: A plasma processing apparatus includes a first mounting table on which a target object to be processed is mounted, a second mounting table provided around the first mounting table, and an elevation mechanism. A focus ring is mounted on the second mounting table. The second mounting table has therein a temperature control mechanism. The elevation mechanism is configured to vertically move the second mounting table.

公开(公告)号：US20220108879A1

公开(公告)日：2022-04-07

申请号：US17494846

申请日：2021-10-06

Applicant: Tokyo Electron Limited

Inventor： Takehiro UEDA

IPC: H01J37/32 ,  H01L21/687

Abstract: A technique allows control of the etching rate at an outer periphery of a substrate being processed. A substrate support includes a substrate support portion that supports a substrate, and an edge ring support that supports an edge ring surrounding the substrate supported on the substrate support portion. The edge ring support includes a plurality of heating elements arranged in a circumferential direction of the edge ring support and a plurality of heater power feeders. Each of the plurality of heater power feeders is included in a corresponding heating element of the plurality of heating elements to provide power from an external source to the corresponding heating element.

公开(公告)号：US20150083333A1

公开(公告)日：2015-03-26

申请号：US14561595

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KIKUCHI ,  Satoshi KAYAMORI ,  Shinya SHIMA ,  Yuichiro SAKAMOTO ,  Kimihiro HIGUCHI ,  Kaoru OOHASHI ,  Takehiro UEDA ,  Munehiro SHIBUYA ,  Tadashi GONDAI

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract translation: 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。