公开(公告)号：US09947864B2

公开(公告)日：2018-04-17

申请号：US15327434

申请日：2015-08-06

申请人： TOKYO ELECTRON LIMITED

发明人： Tamotsu Morimoto ,  Song yun Kang

IPC分类号： H01L43/12 ,  H01L43/00 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L43/12 ,  H01L27/105 ,  H01L43/00 ,  H01L43/08 ,  H01L43/10

摘要： In one embodiment, a method for etching a workpiece including a lower electrode and a multi-layer film disposed on the lower electrode, the multi-layer film including a first magnetic layer, a second magnetic layer, and an insulating layer interposed between the first magnetic layer and the second magnetic layer, through a mask, is provided. The method includes exposing the workpiece to plasma of first processing gas which contains first rare gas and second rare gas having an atomic number larger than that of the first rare gas, and does not contain hydrogen gas.

公开(公告)号：US10910229B2

公开(公告)日：2021-02-02

申请号：US16065462

申请日：2016-11-21

申请人： TOKYO ELECTRON LIMITED

发明人： Koichi Nagakura ,  Tamotsu Morimoto ,  Shuichiro Uda ,  Takeshi Saito

IPC分类号： H01L21/3065 ,  H05H1/46 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/78

摘要： A method capable of increasing a degree of freedom of process conditions that can be set in a plasma treatment while limiting deterioration in the electrical characteristics of a silicon or metal oxide film exposed to plasma, in performing the plasma treatment on a substrate. The method includes: processing a substrate on which a silicon or metal oxide film is formed, with plasma obtained by plasmarizing a process gas composed of a halogen compound; and subsequently, heating the substrate at a temperature of 450 degrees C. or higher in an inert gas atmosphere or a vacuum atmosphere in a state where the metal oxide film exposed to the plasma is exposed. Thus, deterioration in the characteristics of the oxide film caused by the plasma treatment are restored.

公开(公告)号：US10790152B2

公开(公告)日：2020-09-29

申请号：US15740394

申请日：2016-07-15

申请人： TOKYO ELECTRON LIMITED

发明人： Takuya Kubo ,  Song yun Kang ,  Tamotsu Morimoto

IPC分类号： H01L21/3065 ,  H01L43/12 ,  H01L43/08 ,  C23F4/00 ,  H01L21/3213 ,  H01L43/10

摘要： In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.

公开(公告)号：US09443724B2

公开(公告)日：2016-09-13

申请号：US14725656

申请日：2015-05-29

申请人： TOKYO ELECTRON LIMITED

发明人： Tamotsu Morimoto ,  Yusuke Muraki ,  Kazuaki Nishimura

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L21/02334 ,  H01L21/02057 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/3065 ,  H01L21/76892 ,  H01L29/66818

摘要： A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

摘要翻译： 修改处理方法包括制备具有通过等离子体处理形成有损伤层的硅层的基板。 该方法还包括通过用含氟气体的第一工艺气体处理衬底来去除形成在硅层上的损伤层。

公开(公告)号：US09911596B2

公开(公告)日：2018-03-06

申请号：US15232260

申请日：2016-08-09

申请人： TOKYO ELECTRON LIMITED

发明人： Tamotsu Morimoto ,  Yusuke Muraki ,  Kazuaki Nishimura

IPC分类号： H01L21/336 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  H01L29/66

CPC分类号： H01L21/02334 ,  H01L21/02057 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/3065 ,  H01L21/76892 ,  H01L29/66818

摘要： A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.